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    2N 3904 IC Search Results

    2N 3904 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    2N 3904 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5088 transistor

    Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor

    3906

    Abstract: transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906
    Text: HN/ 2N 3905/3906 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors HN / 2N3903 and HN / 2N 3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


    OCR Scan     		PDF 2N3903 3906 transistor 3906 3905 TRANSISTOR 2N 3906 NPN transistor 2n 3906 2N 3904 transistor 3906 TRANSISTOR npn transistor 2N 3904 transistor pnp 3906 pnp transistor 2n 3906

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR ¡m 2N4123 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N 3904 for characteristics. AbSOlUtG Maximum RâtinÇjS


    OCR Scan     		PDF 2N4123

    2N3904

    Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N3903/3904 625mW 2N3904 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S

    3904

    Abstract: transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 4 0 V • Collector Dissipation: Pc m ax =625m W TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 100MHz 3904 transistor 3904 TRANSISTOR 2N 3904 3904 TRANSISTOR npn 2N 3904 transistor 2n3903 3904 NPN 2N3904 2n 3904 NPN transistor 2n 3904

    TRANSISTOR 2N 3904

    Abstract: 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904
    Text: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1 Characteristic Symbol C ollector-Base Vbltage C ollector-Em itter Voltage


    OCR Scan     		PDF 625mW Cut30 100MHz TRANSISTOR 2N 3904 3904 TRANSISTOR npn transistor 3904 2N3904 3904 NPN 2N 3904 transistor 2N39 2n 3904 NPN transistor 2n 3904

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R 2N3903 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N 3904 for characteristics. AbSOlUtG Maximum RâtlnÇjS


    OCR Scan     		PDF 2N3903

    Untitled

    Abstract: No abstract text available
    Text: am mam C h attw o rth, CA M m ic n o s e m i Progress PowcrcO by fochnolaqy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 2N 3904 Features Through Hole Package Capable of 600mWatt:5 of Power Dissipation NPN General Purpose Amplifier


    OCR Scan     		PDF 600mWatt 10uAdc, 30Vdc, 100MHz 500MHz 2N3904

    2N3904

    Abstract: d44h8 NDT453N IC6100 LM3621 Li-ion battery
    Text: 1A C h a rg e C u r r e n t Q1 D 44H 8 — Vf O - • IC1 L M 2 9 3 1 Z 5 .0 + 1 c ell Li - IC2 L M 3 6 21 VDD VBAT + C h g ln t VBAT VSS Ico m p LED 1 MCO LED2 V co m p 0 .1 JJ.F PFD Boost CSR V se t Ise t m C4 i . 0 .0 1 f i F C7 22 Q2 2N 3904 C5 11 0 . 0 2 2 ¡xY


    OCR Scan     		PDF LM3621 D44H8 2N3904 NDT453N 2N3904 d44h8 NDT453N IC6100 LM3621 Li-ion battery

    t1d6

    Abstract: PN3906 t1d6 transistor RXT3904 SST3904 UMT3904 SPEC-C37 r1a transistor 2N3904 MMST3904
    Text: Transistors I NPN General Purpose Transistor UM T3904/SST3904/M M S T3904/R XT3904/2N 3904 • F e a tu re s • E x te r n a l d im e n s io n s U n its : m m 1 ) B V ceo < 4 0 V (lc = 1 m A > 2 ) C o m p le m e n ts th e U M T 3 9 0 6 /S S T 3 9 0 6 /M M S T 3 9 0 6 /R X T 3 9 0 6 /P N 3906.


    OCR Scan     		PDF UMT3904/SST3904/MMST3904/RXT3904/2N3904 UMT3906/SST3906/MMST3906/RXT3906/PN3906 UMT3904 SST3904 V1MST3904 RXT3904 2N3904 t1d6 PN3906 t1d6 transistor SPEC-C37 r1a transistor 2N3904 MMST3904

    2N3904

    Abstract: 2N3903 2n3904D 2n3904 motorola 2N3904 equivalent MOTOROLA 2N 2N 3904 2n 3904 ic 3904
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Sym bol Value Unit Collector- Emitter Voltage Rating VCEO 40 Vdc Collector- Base Voltage VCBO 60


    OCR Scan     		PDF 2N3903 2N3904* 20ECTOR 2N3904 2N3904 2n3904D 2n3904 motorola 2N3904 equivalent MOTOROLA 2N 2N 3904 2n 3904 ic 3904

    Untitled

    Abstract: No abstract text available
    Text: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N3903/3904 625mW 2N3903 2N3904

    marking CODE r1a

    Abstract: 2N3904 transistor R1A R1A Marking npn SST3904 UMT3904 h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F
    Text: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! Features ! External dim ensions Units : mm 1 ) B V ceo > 40V (Ic = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! Package, marking and packaging specifications


    OCR Scan     		PDF UMT3904 SST3904 MMST3904 2N3904 UMT3906 SST3906 marking CODE r1a 2N3904 transistor R1A R1A Marking npn h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F

    transistor 2N 3904

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQA05 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56 TPQ2907A TPQ3906 transistor 2N 3904

    2n4125 equivalent

    Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 NPN+2n3904

    smd ic hhb

    Abstract: Quad 2n3904 smd 2N3904 TRANSISTOR SMD 312 2N3904 HHB smd smd transistor A1 HB smd transistor 517 smd transistor fay ic chip hhb 551C4
    Text: SflE D • 312^557 EN2016 éiantec □ □ □ 5 S E1Ö TTT ■ ELA EN2016 Fast Quad NPN Array ELANTEC '•M3-ZS INC Features General Description • • • • • T he E N 2016 fam ily are quad m on olith ic vertical N P N transis­ tor arrays w hich offer excellen t param etric m atch in g and h igh


    OCR Scan     		PDF EN2016 2N3904 TPQ3904 MPQ3904 EN2016CN MDP0031 EN2016CJ MDP0014 EN2016CM 20-Lead smd ic hhb Quad 2n3904 smd 2N3904 TRANSISTOR SMD 312 2N3904 HHB smd smd transistor A1 HB smd transistor 517 smd transistor fay ic chip hhb 551C4

    transistor 2N3905

    Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
    Text: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0


    OCR Scan     		PDF BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 transistor 2N3905 2N4402 2N4403 BCY77P BCY79P MPS2907A

    2N3904

    Abstract: 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903
    Text: 2 N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR CoN edor-Em itter Voltage: V c e o * 4 0 V C o lle cto r D issipation: P c m ax -62Sm W ABSOLUTE MAXIMUM RATINGS {TA=25t) C h a ra c te ristic C o lle cto r-B ase Voltage Collector-E m itter Voltage


    OCR Scan     		PDF N3903/3904 -62Sm 100mA 100MHz 2N3903/3904 2N3904 2N3804 transistor ST 2N3904 transistor ST 2N3804 transistor 2n3903 2N3903 2n3904 225 ST 2n3904 transistor 2N 3904 N3903

    f2n3906

    Abstract: ZTX304 BC557P ZTX107 ZTX452 ZTX550 BC182P BC546P BCY65EP BFS61
    Text: NPN GENERAL PURPOSE T A B L E 1 - N P N S IL IC O N P L A N A R G E N E R A L PURPO SE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


    OCR Scan     		PDF ZTX453 ZTX452 MPS2222 MPS3416 MPS3417 BC547P ZTX382 BC107P BC237P ZTX237 f2n3906 ZTX304 BC557P ZTX107 ZTX550 BC182P BC546P BCY65EP BFS61

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


    OCR Scan     		PDF 2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F

    BC 540 TRANSISTOR

    Abstract: transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n 2N3415
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique Type NPN M ax im u m ratings PIMP Ptot Characteristics at 25 °C VcEO h21E min 2N 3414 2 N 3 4 15 2N 3416 2 N 3 4 17 2N 2N 2N 2N 2N 3707 3708 3709 3710 3711 10/


    OCR Scan     		PDF 2N3415 2N3711 30duit BC 540 TRANSISTOR transistor Bc 540 NPN transistor 2n 3904 transistor 2N 3904 2907pn NPN transistor 2n 3906 2N3702P 2N 3904 transistor transistor 2n

    2n4125 equivalent

    Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent n4401

    NPN switching transistor 2N4403

    Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, NPN switching transistor 2N4403 NPN transistor 2n 3904 transistor 2N 3904

    2N3906 JEDEC

    Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 equivalent 2n3906 npn