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    2MBIT Search Results

    2MBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25EU0021A-MAHN-T Renesas Electronics Corporation 2Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation
    AT25EU0021A-SSHN-B Renesas Electronics Corporation 2Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation
    AT25EU0021A-SSHN-T Renesas Electronics Corporation 2Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation
    AT25XV021A-XMHV-B Renesas Electronics Corporation 2Mbit, 1.65 V to 4.4 V Range SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT45DB021E-DWF Renesas Electronics Corporation 2Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation

    2MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)


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    PDF V58C2128 DDR400 DDR333

    intel 80196 microcontroller

    Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
    Text: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform


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    PDF PSD913F2 PSD934F2 PSD954F2 256Kbit PQFP52 PLCC52 intel 80196 microcontroller 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 2MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


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    PDF W28F321BT/TT 32MBIT W28F321, W28F321

    W39L020

    Abstract: No abstract text available
    Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.


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    PDF W39L020 W39L020 12-volt

    A25L05PT

    Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
    Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date


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    PDF A25L20P/A25L10P/A25L05P 512Kbit, 85MHz 512Kbit 203mm A25L05PT A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P

    LH28F320BFHE-PBTLF1

    Abstract: Flash Memory 32Mbit DQ15DQ0
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 2Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LH28F320BFHE-PBTLF1 32Mbit 2Mbitx16) LHF32FF1 EL16X114 LH28F320BFHE-PBTLF1 Flash Memory 32Mbit DQ15DQ0

    V54C3128164VAT

    Abstract: No abstract text available
    Text: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


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    PDF V54C3128164VAT 143/133/125MHz V54C3128164VAT

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)


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    PDF V58C2128 DDR400 DDR333

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


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    PDF V58C2128 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns


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    PDF V58C2128 DDR500 DDR400 DDR333

    Untitled

    Abstract: No abstract text available
    Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns


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    PDF V58C2128 DDR500 DDR400 DDR333

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash


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    PDF LE28DW8163T-80T xxxx-19/20 xxxx-20/20

    IMCS 700

    Abstract: PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2
    Text: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5 V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■


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    PDF PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 256Kbit PQFP52 PLCC52 IMCS 700 PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2

    V54C3128164VAT

    Abstract: V54C3128164 AAY3
    Text: V54C3128164VAT HIGH PERFORMANCE 166/143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 6 7 75 8PC System Frequency fCK 166 MHz 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3 ) 6 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


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    PDF V54C3128164VAT 166/143/133/125MHz V54C3128164VAT V54C3128164 AAY3

    DS3077

    Abstract: MV1441 MV1442 AMI Semiconductor encoder Digital Alarm Clock 40 pin AMI HDB3 APPLICATION
    Text: MV1442 HDB3 Encoder/Decoder/Clock Regenerator DS3077 The MV1442, along with other devices in the Zarlink 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection functions for a 2.048Mbit PCM transmission link operating in


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    PDF MV1442 DS3077 MV1442, 048Mbit MV1442 DS3077 MV1441 AMI Semiconductor encoder Digital Alarm Clock 40 pin AMI HDB3 APPLICATION

    V54C365804VC

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C365804VC HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143MHz 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


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    PDF V54C365804VC 143MHz 133MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (404) 4 BANKS X 8Mbit X 4 (164) MOSEL VITELIC Clock Cycle Time (tCK2) 7 75 8 DDR266A DDR266B DDR200 7.5 ns 10 ns 10 ns 7 ns 7.5 ns


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    PDF V58C2128 DDR266A DDR266B DDR200

    39LV010

    Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
    Text: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification


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    PDF Pm39LV512 Pm39LV010 Pm39LV020 Pm39LV040 Pm39LV512: Pm39LV010: Pm39LV020: Pm39LV040: Pm39LV512) 39LV010 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE

    M45PE20

    Abstract: ST10
    Text: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


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    PDF M45PE20 25MHz 4012h) M45PEthout M45PE20 ST10

    Untitled

    Abstract: No abstract text available
    Text: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)


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    PDF IS25CD512/010 IS25LD020 512Kbit/1 512Kbit IS25CD512: IS25CD010: IS25LD020: 512Kb 32KByte

    ISC PSD834F2

    Abstract: PSDSOFT EXPRESS
    Text: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■


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    PDF PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 52-pin, 256Kbit PLCC52 PQFP52 ISC PSD834F2 PSDSOFT EXPRESS

    free motion DETECTOR CIRCUIT DIAGRAM

    Abstract: motion DETECTOR CIRCUIT DIAGRAM pst5 sine wave pv inverter circuit diagram digital video signal processor IR motion detector MSM518221 QFP100-P-1420-0 TC90A11F toshiba "motion compensation"
    Text: TC90A11F TO SHIBA TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A11F MULTI SYSTEM 3DIM . DNR IC FOR VCR TC90A11F is the digital video signal processor, which reduces the noise on the playback video signal of VCR, with the external video memory IC (2Mbit FIFO type).


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    PDF TC90A11F TC90A11F QFP100-P-1420-0 58MHz, 43MHz) free motion DETECTOR CIRCUIT DIAGRAM motion DETECTOR CIRCUIT DIAGRAM pst5 sine wave pv inverter circuit diagram digital video signal processor IR motion detector MSM518221 toshiba "motion compensation"

    Untitled

    Abstract: No abstract text available
    Text: w GEC PLE SS EY OCTOBER 1993 S E M I C O N D U C T O R S MV1442 HDB3 ENCODER/DECODER/CLOCK REGENERATOR Supersedes June 1993 edition The MV1442, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection


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    PDF MV1442 MV1442, 048Mbit MV1442 37bfl522 37bfl5EÂ

    PQFP44

    Abstract: STLC5432 STLC5432Q PQFP4410X10 8192KB
    Text: / = T S G S -TH O M S O N ^ 7 # . [* ^ Â g T ÏÏ!M STLC5432 []© S 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRODUCT PREVIEW ONE CHIP SOLUTION FROM PCM BUS TO TRANSFORMER(CEPT STANDARD ISDN PRIMARY ACCESS CONTROLLER (COMPATIBLE WITH ETSI, OPTION 1 AND 2)


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    PDF STLC5432 ST5451/MK50H25/MK5027 372fl 16384KHz PQFP44 STLC5432 STLC5432Q PQFP4410X10 8192KB