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    2MBI600U2E Search Results

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    2MBI600U2E Price and Stock

    Fuji Electric Semiconductors 2MBI600U2E-060

    IGBT MOD.DIODE DUAL 600A 600V U SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 2MBI600U2E-060
    • 1 $238.08781
    • 10 $226.7503
    • 100 $226.7503
    • 1000 $226.7503
    • 10000 $226.7503
    		Get Quote

    Fuji Electric Semiconductors 2MBI600U2E-060-50

    IGBT MOD.DIODE DUAL 600A 600V U SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 2MBI600U2E-060-50
    • 1 $238.08781
    • 10 $226.7503
    • 100 $226.7503
    • 1000 $226.7503
    • 10000 $226.7503
    		Get Quote

    2MBI600U2E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2MBI600U2E-060

    Abstract: ED-4701 MT5F12959 600A-600V 2mbi600 2mbi600u2e
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI600U2E-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5619 MS5F 5619 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		2MBI600U2E-060 MS5F5619 H04-004-07b P4/13, P5/13) P12/13, H04-004-06b H04-004-03a 2MBI600U2E-060 ED-4701 MT5F12959 600A-600V 2mbi600 2mbi600u2e PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI600U2E-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5619 MS5F 5619 1 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Ind. Content R e c o r d s


    Original     		2MBI600U2E-060 MS5F5619 H04-004-07b H04-004-06b H04-004-03a PDF

    2MBI600U2E-060

    Abstract: 2MBI600U2E060 2MBI600U2E 2MBI600U2
    Text: 2MBI600U2E-060 IGBT Module U-Series 600V / 600A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Features Applications • High speed switching · Voltage drive · Low inductance module structure · Inverter for Motor drive · AC and DC Servo drive amplifier


    Original     		2MBI600U2E-060 2MBI600U2E-060 2MBI600U2E060 2MBI600U2E 2MBI600U2 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF