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Fuji Electric Co Ltd 2MBI150U4A-120-50 Igbt, Dual, Module, 150A, 1200V; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:735W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Fuji Electric 2MBI150U4A-120-50
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Newark	2MBI150U4A-120-50	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fuji Electric Semiconductors 2MBI150U4A-120-54 IGBT MOD.DIODE DUAL 150A 1200V U SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	2MBI150U4A-120-54					1 $86.97591 10 $86.97591 100 $81.2859 1000 $81.2859 10000 $81.2859	Get Quote

2MBI150U4A120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2MBI150U4A-120		Fuji Electric	IGBT MODULE		Original	PDF

2MBI150U4A120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28	PDF
2MBI150U4A-120 Abstract: ED-4701 MT5F12959 Hydrogen MS5F6031 2mbi150u4a120 Text: SPECIFICATION Device Name : Type Name : Spec. No. Feb. 09 ’05 S.Miyashita Feb. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI150U4A-120 MS5F 6031 MS5F6031 1 13 H04-004-07b R e v i s e d Date Classification Feb.-09 -’05 Enactment Ind. Content R e c o r d s	Original	2MBI150U4A-120 MS5F6031 H04-004-07b H04-004-06b H04-004-03a 2MBI150U4A-120 ED-4701 MT5F12959 Hydrogen MS5F6031 2mbi150u4a120	PDF
2MBI450U4E-120 Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！	Original	max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120	PDF