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    2L SMD TRANSISTOR Search Results

    2L SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2L SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2L smd transistor

    Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		ISO/TS16949 OT-23 CMBT5401 C-120 2L smd transistor CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l PDF

    2L smd transistor

    Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		OT-23 CMBT5401 C-120 2L smd transistor MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160 PDF

    2L smd transistor

    Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		OT-23 CMBT5401 C-120 2L smd transistor TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		OT-23 CMBT5401 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 PDF

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


    Original     		MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l PDF

    2L smd transistor

    Abstract: No abstract text available
    Text: Transistors Transistor T SMD Type Product specification KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		KMBT5401 MMBT5401) OT-23 -10mA 30MHz 2L smd transistor PDF

    smd 2l

    Abstract: 2L SOT-23 MMBT5401 KMBT5401 smd .2L ic smd MARKING
    Text: Transistors SMD Type PNP Transistors KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		KMBT5401 MMBT5401) OT-23 -10mA 30MHz smd 2l 2L SOT-23 MMBT5401 smd .2L ic smd MARKING PDF

    COIL metal detector schematic

    Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		STEVAL-IFS004V1 TDE0160 TDE0160, COIL metal detector schematic SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04 PDF

    2L smd transistor

    Abstract: SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5401 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		MMBT5401 OT-23 600mA 300mW 100MHz 2L smd transistor SMD TRANSISTOR MARKING 037 smd transistor 079 TRANSISTOR SMD catalog catalog transistors smd transistors list SMD TRANSISTOR MARKING 079 SMD TRANSISTOR br-37 bipolar transistors catalog smd transistor 2l PDF

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		STEVAL-IFS004V1 TDE0160 TDE0160, PDF

    PMDS R7 DIODE

    Abstract: C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K MB39A104 RB053L-30 TPC8102
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71105-1E ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between


    Original     		DS04-71105-1E MB39A104 MB39A104 F0307 PMDS R7 DIODE C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K RB053L-30 TPC8102 PDF

    c3207

    Abstract: 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71105-1Ea ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between


    Original     		DS04-71105-1Ea MB39A104 MB39A104 c3207 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150 PDF

    DocID2143 Rev 33

    Abstract: No abstract text available
    Text: L78 Positive voltage regulator ICs Datasheet - production data Description The L78 series of three-terminal positive regulators is available in TO-220, TO-220FP, D²PAK and DPAK packages and several fixed output voltages, making it useful in a wide range of applications.


    Original     		O-220, O-220FP, O-220 DocID2143 DocID2143 Rev 33 PDF

    c25 rectifier

    Abstract: 6SVP150M C1608JB1H104K IRF7901D1 MB3889 MB39A106
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71107-1E ASSP for Power Supply Applications Evaluation Board MB39A106 • DESCRIPTION The MB39A106 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage


    Original     		DS04-71107-1E MB39A106 MB39A106 F0310 c25 rectifier 6SVP150M C1608JB1H104K IRF7901D1 MB3889 PDF

    C1608JB1H104K

    Abstract: 6SVP150M C3216JB1A475 IRF7901D1 MB3889 RB495D RR0816P-133-D c2682 fetky 359 C1608JB1H223K
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71106-1E ASSP for Power Supply Applications Evaluation Board MB3889 • DESCRIPTION The MB3889 evaluation board is a surface mount circuit board with two channels of down conversion circuit. Output voltage is set to 5 V, 3.3 V internally and the maximum current 3 A is supplied from power supply voltage


    Original     		DS04-71106-1E MB3889 MB3889 F0310 C1608JB1H104K 6SVP150M C3216JB1A475 IRF7901D1 RB495D RR0816P-133-D c2682 fetky 359 C1608JB1H223K PDF

    6SVP150M

    Abstract: C1608JB1H104K IRF7901D1 MB3889 RB495D c2682
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71106-1Ea ASSP for Power Supply Applications Evaluation Board MB3889 • DESCRIPTION The MB3889 evaluation board is a surface mount circuit board with two channels of down conversion circuit. Output voltage is set to 5 V, 3.3 V internally and the maximum current 3 A is supplied from power supply voltage


    Original     		DS04-71106-1Ea MB3889 MB3889 6SVP150M C1608JB1H104K IRF7901D1 RB495D c2682 PDF

    C1608JB1H104K

    Abstract: 6SVP150M MB39A106 2L smd transistor IRF7901D1 MB3889 WT21 transistor C4C k diode sg 5 ts C7A smd
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71107-1Ea ASSP for Power Supply Applications Evaluation Board MB39A106 • DESCRIPTION The MB39A106 evaluation board is a surface mount circuit board with two channels of down conversion circuit. The output voltage is internally set to 5.0 V and 3.3 V. The maximum current 3.0 A is supplied from the power supply voltage


    Original     		DS04-71107-1Ea MB39A106 MB39A106 C1608JB1H104K 6SVP150M 2L smd transistor IRF7901D1 MB3889 WT21 transistor C4C k diode sg 5 ts C7A smd PDF

    9288X

    Abstract: DA ry SMD transistor transistors smd dal SW11 Q67101-H5083 smd transistor GY QUARTZ 20,25 MHZ TRANSISTOR gy 740 SDA9288X Siemens SDA 9288X
    Text: General Information Contents Introduction. 5 1 Features . 7


    Original     		9288X P-DSO-32-2 9288X DA ry SMD transistor transistors smd dal SW11 Q67101-H5083 smd transistor GY QUARTZ 20,25 MHZ TRANSISTOR gy 740 SDA9288X Siemens SDA 9288X PDF

    w1p npn

    Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
    Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are


    OCR Scan     		OT-223 priFS17 BFS17A BFT25 BFT92 BFT93 OT-23 OT-89 OT-143 OT-223 w1p npn SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P PDF

    SOT89 MARKING 2E

    Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		OT-89 OT-223 BF821 BF822 BF823 BSP16 BSP20 BSR19 BSR19A BSR20 SOT89 MARKING 2E SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


    OCR Scan     		BSH106 BSH106 OT363 OT363 PDF

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


    OCR Scan     		BSH105 BSH105 ld smd transistor LD 33 BSH105N PDF