Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
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1N914
Abstract: LMBT5401LT1G
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽ We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G
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LMBT5401LT1G
3000/Tape
LMBT5401LT3G
10000/Tape
OT-23
1N914
LMBT5401LT1G
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
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MARKING 2L
Abstract: MMBT5401 MMBT5551
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
MMBT5401
MARKING 2L
MMBT5551
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MMBT5401
Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L
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MMBT5401
-150V
350mW
OT-23
MMBT5401L
MMBT5401-AE3-R
MMBT5401L-AE3-R
QW-R206-011
MMBT5401
MMBT5401L
MMBT5401L-AE3-R
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2L smd transistor
Abstract: CMBT5401 TRANSISTOR SMD MARKING 2l smd 2l
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5401
C-120
2L smd transistor
CMBT5401
TRANSISTOR SMD MARKING 2l
smd 2l
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MMBT5401 SOT-23
Abstract: marking 2L 2l sot23 marking transistor marking 2L
Text: MMBT5401 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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MMBT5401
OT-23
OT-23
MMBT5551
-100A,
-10mA
-50mA
-10mA
30MHz
MMBT5401 SOT-23
marking 2L
2l sot23 marking
transistor marking 2L
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2L smd transistor
Abstract: MARKING SMD pnp TRANSISTOR ec smd transistor 2l TRANSISTOR SMD MARKING 2l ts 4141 TRANSISTOR smd CMBT5401 2L smd Device marking 160
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5401
C-120
2L smd transistor
MARKING SMD pnp TRANSISTOR ec
smd transistor 2l
TRANSISTOR SMD MARKING 2l
ts 4141 TRANSISTOR smd
CMBT5401
2L smd
Device marking 160
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2L smd transistor
Abstract: TRANSISTOR SMD MARKING 2l smd transistor 2l CMBT5401
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5401
C-120
2L smd transistor
TRANSISTOR SMD MARKING 2l
smd transistor 2l
CMBT5401
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5401 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transisto r Marking CMBT5401 = 2L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5401
C-120
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MMBT5401
Abstract: 2L d 1N914
Text: MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 C B Top View 1 1 MARKING 2 K E 2 2L
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MMBT5401
OT-23
01-June-2002
MMBT5401
2L d
1N914
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)
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MMBT5401-G
OT-23
MMBT5551-G)
QW-BTR18
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2L smd transistor
Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)
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MMBT5401-G
OT-23
MMBT5551-G)
QW-BTR18
2L smd transistor
2l TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE 2l
TRANSISTOR SMD MARKING 2l
smd transistor 2l
MMBT5401-G
SMD MARKING CODE 2L
TRANSISTOR SMD MARKING CODE PD
smd code 2l
transistor smd 2l
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MMBT5401-G
Abstract: No abstract text available
Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)
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MMBT5401-G
OT-23
MMBT5551-G)
QW-BTR18
MMBT5401-G
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LR431
Abstract: A7TA LR431BLT1 WZR device marking lr431 sot-23
Text: LESHAN RADIO COMPANY, LTD. LR431 LINEAR INTEGRATED CIRCUIT 352*5$00$%/ 35(&,6,21 5( (5(1&( '(6&5,37,21 7KH LRC LR LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\
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LR431
LR431
270TYP
050TYP
A7TA
LR431BLT1
WZR device marking
lr431 sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LR431AP R H LT1G LINEAR INTEGRATED CIRCUIT 352*5$00$%/ 35(&,6,21 5( (5(1&( '(6&5,37,21 7KH LV D WKUHHWHUPLQDO DGMXVWDEOH LRC L RR1APHLT1G DJXDUDQWHHGWKHUPDO VWDELOLW\ RYHU DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\
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LR431APH
OT-23
OT-23
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LINEAR INTEGRATED CIRCUIT LTL431APHLT1G 352*5$00$%/ 35(&,6,21 5( (5(1&( '(6&5,37,21 7KH LV D WKUHHWHUPLQDO DGMXVWDEOH LTL431APHLT1G DJXDUDQWHHGWKHUPDO VWDELOLW\ RYHU DSSOLFDEOH UHJXODWRU ZLWK WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\
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LTL431APHLT1G
OT-23
OT-23
037TPY
950TPY
550REF
022REF
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BTA1514N3
Abstract: BTC3906N3
Text: Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage.
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C307N3
BTA1514N3
BTA1514N3
-150V
BTC3906N3.
OT-23
UL94V-0
BTC3906N3
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Untitled
Abstract: No abstract text available
Text: LRC LESHAN RADIO COMPANY,LTD. LTL431 LINEAR INTEGRATED CIRCUIT 352*5$00$%/ 35(&,6,21 5( (5(1&( '(6&5,37,21 7KH LRC LTL LV D WKUHHWHUPLQDO DGMXVWDEOH UHJXODWRU ZLWK D JXDUDQWHHG WKHUPDO VWDELOLW\ RYHU DSSOLFDEOH WHPSHUDWXUH UDQJHV 7KH RXWSXW YROWDJH PD\ EH VHW WR DQ\
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LTL431
OT-23
OT-23
037TPY
950TPY
550REF
022REF
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DTC124XK equivalent
Abstract: No abstract text available
Text: DTC124XK NPN Bias Resistor Transistor 3* ° '' 0.4 2L The built-in bias resistor allows inverter circuit configu ration without external resistors for input. g Pin configuration 1 = Collector/OUT 2 = Base/I N 3 = Emitter/GND m Top View ; Marking DC4 OUT
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DTC124XK
OT-23
DTC124XK equivalent
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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MOSFET MARKING 3F
Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz
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Transistors/SOT23
MMBT2222A
BT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
BS817
BS850
MOSFET MARKING 3F
sot23 s07
marking 702 sot23
Diode marking CODE 1M
transistor marking 6c
2F PNP SOT23
marking code 2f
2F P marking
NA MARKING SOT23
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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