Hitachi 1024k*8 SRAM
Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8
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HN58X2464I
64kbit
400kHz
HN58X2432I
32kbit
HN58X2416I
16kbit
HN58X2408I
Hitachi 1024k*8 SRAM
HB28B128C8C
HB28B512C8C
CSP72
NVM1GBYTE
CSP-72
512kx8 sram dip
HN58X2402SI
HN58X2404SI
HN58X2408I
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2kx8 rom
Abstract: FT28C16 MIL-STD-883-M5004 FT28C16E 2kx8 EEPROM atmel
Text: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write
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FT28C16
FT28C16
2kx8 rom
MIL-STD-883-M5004 FT28C16E
2kx8 EEPROM atmel
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2kx8 eeprom
Abstract: No abstract text available
Text: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write
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FT28C16
FT28C16
2kx8 eeprom
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48Z08
Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
Text: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic
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55Plastic
300-mil
600-mil
350-mil
48Z08
X20C16
"Direct Replacement"
48Z18
BQ4010
DS1225
STK10C48
STK10C68
STK11C48
STK11C68
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TEA7052DP
Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019
Text: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit
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L3280AB
LS256B
LS285AB1
LS588N1
LS656AB
TEA7052DP
TEA7063DP
L3100B1
LS5120B
LS5060B
ls285ab
TEA7531DP
7532DP
M3541B
LS588N
pnp for 2n3019
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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DATASHEET OF SPI protocol
Abstract: FM25040 FM25160
Text: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the
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FM25160
FM25040
16-bit
DATASHEET OF SPI protocol
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AN-300
Abstract: FM25040 FM25160
Text: AN-300 SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the
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AN-300
FM25160
FM25040
16-bit
AN-300
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EDGE22
Abstract: FM25040 FM25160
Text: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the
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FM25160
FM25040
16-bit
EDGE22
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2kx8 sram
Abstract: bill validator machine circuit 110v dc UPS system FLASHLINK fs5 mosfet 220v ac to 5v dc converter project free circuit Dvd eprom programmer socket plcc52 boot loader st file 68hc711
Text: Memory System for MCU ST Microelectronics FLASH+PSD dramatically reduce component count and cost. is a world leader in non-volatile Before FLASH+PSD memories, with including OTP & UV I/O Latch Latch a broad range of products EPROM, Flash Memories, Decode Serial and Parallel EEPROM,
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uni5030
SL71Y
2kx8 sram
bill validator machine circuit
110v dc UPS system
FLASHLINK
fs5 mosfet
220v ac to 5v dc converter project
free circuit Dvd eprom programmer
socket plcc52
boot loader st file
68hc711
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PDF
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eeprom 24lc16
Abstract: 93LC56 93LC66 DIP8 Package k 24LLC02 24LC02 24LC08 24LC16 93LC46
Text: EEPROM 3 wire serial Part No. Density Bit configuration Bit (Word x Bit) Supply voltage (V) Operating voltage Read (V) Writ (V) 93LC46 1K 64 x16 3~5 2.0~5.5 2.7~5.5 93LC56 2K 128 ×16 3~5 2.0~5.5 2.7~5.5 93LC66 4K 256 ×16 3~5 2.0~5.5 2.7~5.5 Current consumption
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93LC46
93LC56
93LC66
24LC02
24LLC02
24LC08
24LC16
eeprom 24lc16
93LC56
93LC66
DIP8 Package k
24LLC02
24LC02
24LC08
24LC16
93LC46
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8255 intel microprocessor block diagram
Abstract: 8080 intel microprocessor pin diagram microprocessor 8255 application s MD2147H Intel 8080 interface intel oem price list Intel 8255 electrical data md8080
Text: LEADLESS CHIP CARRIERS LCC Product List Intel's Military Products are available in the JEDEC Leadless Chip Carrier Type C, E, and F. All Intel military products are processed to the reliability and quality standards of MIL-STD-883B. STATIC RAMS Organization
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MIL-STD-883B.
MR2I28*
MR2147H
MR2I48H
MR2167*
MR2164»
64Kxl
MR2764
MR27128*
MR2815
8255 intel microprocessor block diagram
8080 intel microprocessor pin diagram
microprocessor 8255 application s
MD2147H
Intel 8080 interface
intel oem price list
Intel 8255 electrical data
md8080
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24LLC08
Abstract: 93LC56 24LC02 24LC08 24LC16 24LLC02 93LC46 93LC66
Text: EEPROM z 3 wire serial Part No. Density Bit configuration Bit (Word x Bit) Supply voltage (V) Operating voltage Read (V) Writ (V) 93LC46 1K 64 x16 3~5 2.0~5.5 2.7~5.5 ◎93LC56 2K 128 ×16 3~5 2.0~5.5 2.7~5.5 ◎93LC66 4K 256 ×16 3~5 2.0~5.5 2.7~5.5 Current consumption
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93LC46
93LC56
93LC66
24LLC02
24LC08
24LC02
24LLC08
24LC16
24LLC08
93LC56
24LC02
24LC08
24LC16
24LLC02
93LC46
93LC66
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64Kx8 CMOS RAM
Abstract: oki 80C88 256X4 CMOS RAM 4702 8089 bus oki 82c54 lcd 4x20 CSP-28 display lcd 4x20 interface 8254 with 8086
Text: Digital ICs 7 2009 P RODUCT S ELECTION GUIDE Digital ICs pg. 7-1 Micro P/C (pg. 7-4) Demodulators (pg. 7-2) Parallel EEPROM (pg. 7-3) Data Communication (pg. 7-4) Digital Filters (pg. 7-2) Memory/883 (pg. 7-3) LCD and LED Display Drivers (pg. 7-4) Down Converters
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Memory/883
1-888-INTERSIL
82C52
16MHz
Generator-72
HD-6402
64Kx8 CMOS RAM
oki 80C88
256X4 CMOS RAM
4702
8089 bus
oki 82c54
lcd 4x20
CSP-28
display lcd 4x20
interface 8254 with 8086
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IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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M8049
Abstract: m3636 M8755A 2KX8 m8288 M2816
Text: LEADLESS CHIP CARRIERS LCC Product List Intel's Military Products are available in the JEDEC Leadless Chip Carrier Type C, E, and F. All Intel military products are processed to the reliability and quality standards of MIL-STD-883B. STATIC RAMS Organization
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MIL-STD-883B.
MR2I28*
MR2147H
MR2I48H
MR2167*
MR2164»
64Kxl
MR2764
MR27128*
MR2815
M8049
m3636
M8755A
2KX8
m8288
M2816
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Untitled
Abstract: No abstract text available
Text: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current
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Am28C256
64-byte
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2817A250
Abstract: l 817a 2817A200 CI 817a 2817A-25 2817A300 L817 2817 EEPROM eeprom 2817
Text: 2817A/5517A Timer E2 16K Electrically Erasable PROMs October 1989 Description Features • Ready/Busy Line for End-of-Write ■ High Endurance Write Cycles SEEO's 5517A and 2817A are 5V only, 2Kx8 electrically erasable programmable read only memories EEPROMs . They are packaged in a 28 pin package and
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817A/5517A
5S17A
MD400014/C
2S17A
2817A250
l 817a
2817A200
CI 817a
2817A-25
2817A300
L817
2817 EEPROM
eeprom 2817
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Untitled
Abstract: No abstract text available
Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8
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OCR Scan
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M2716
M2764A
TS27C64A
M27128A
M27C256B
M27512
M27C512
M27C1000
M27C1001
M27C1024
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Untitled
Abstract: No abstract text available
Text: BR28C16A-150 BR28C16A-150 2KX8 \¿y h CMOS 5V EEPROM 2KX8Bit CMOS 5V EEPROM • W K 'tfiiB l/D im ensionsiU nit : mm BR28C16A-150 « , 2048 7 - K X 8 t ' "j £, EEPROM) T* 32.0 +°02 To 7-1 •j'7 RAM t £ t if'T ' ? i t „ /W 24 I i5 0 n s £ > w E < s ^ ( t t l
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OCR Scan
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BR28C16A-150
BR28C16A-150
2048X
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A6S00
Abstract: No abstract text available
Text: BR28C16A B R 9 f iC 1 6 A 2KX8 ^ 7 h CM0S 5V EEPR0M 2K X8B it CMOS 5V EEPROM Ï O n m m r V 'li 1 • £Hë\l's£iil/Dim ensions Unit : mm BR28C16A t±, 2048 9 - K X 8 \£"j h • ij (E E P R O M ) T ' t „ 5 V J H - * iS ? * b ftl/, m*lliL%Ü:WêjA*ttzi'-r-r
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OCR Scan
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BR28C16A
BR28C16A
150ns
28C16A
A6S00
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eeprom 2816
Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel
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OCR Scan
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2864B
AT28HC16
AT28C64
AT28C64E
AT28C64X
AT28HC64
AT28PC64
AT28C64F
AT28C2S6
AT28C256F
eeprom 2816
2816A eeprom
Atmel eeprom Cross Reference
eeprom Cross Reference
EEPROM 2864 INTEL
28C64 EEPROM
xicor 28C64
Xicor 28C010
Xicor 2864
intel 2864
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64x16
Abstract: 8DIP 28-DIP KM28C64B 128X16
Text: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now
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OCR Scan
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KM93C06/G/GD/I
KM93C07/G/GD/I
16x16
16x16
KM93C46/G/GD/I
KM93C46V/VG/VGD/I
64x16
128x8
250KHZ
8DIP
28-DIP
KM28C64B
128X16
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SLO 365 R
Abstract: BR6116-100 BR6264P-100 BR62256-70 BR28C16-150 XLS78C800P-25 BR2804A-250 BR9021A 5 m0 365 R XLS78C800P-45
Text: ROHM CO L T D 40E C ? ñ 2 ñ cm D 00Q3537 IRHM 1 B Memory ICs • EEPROM * Under Development Capacity bits Type BR93C46 BR93C46A BR93CS46 1K « ☆BR93C56A ☆ BR93C56B 2K BR9021A tf) Configuration Max. access Min. cycle Supplyvoilage Max currentconsumption(mA) Re.vritecycles Data life
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OCR Scan
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00Q3537
BR93C46
64x16
BR93C46A
BR93CS46
BR93C56A
BR93C56B
BR9021A
BR9021B
BR93C66A
SLO 365 R
BR6116-100
BR6264P-100
BR62256-70
BR28C16-150
XLS78C800P-25
BR2804A-250
BR9021A
5 m0 365 R
XLS78C800P-45
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