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    2K EEPROM 2816 Search Results

    2K EEPROM 2816 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    MC28F008-10 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    X28C010FI-15 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    ER2051HR-006 Rochester Electronics LLC ER2051 - EEPROM Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy

    2K EEPROM 2816 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil 100pF DS1220Y 24-PIN 2816 eeprom CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y-100 DS1220Y-120

    EEPROM 2816 CMOS

    Abstract: DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01
    Text: DS1220AB/AD 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) DS1220AB/AD 720-MIL 24-PIN EEPROM 2816 CMOS DS1220 DS1220AB DS1220AB-100 DS1220AB-120 DS1220AD ICC01

    EEPROM 2816 CMOS

    Abstract: CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil DS1220Y-150 DS1220Y-150+ DS1220Y-200 DS1220Y-200+ DS1220Y-200IND DS1220Y-200IND+ EEPROM 2816 CMOS CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220AB-100 DS1220AD DS1220AB DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 ICC01
    Text: DS1220AB/AD 16k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM


    Original     		PDF DS1220AB/AD 24-pin DS1220AD) DS1220AB) 100ns 120ns 2816 eeprom CI EEPROM 2816 DS1220AB-100 DS1220AD DS1220AB DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 ICC01

    K157UD2

    Abstract: K157DA1 CD4026E K176IE12 K190KT2P NE545B K594PA1 K561LN2 KR1531LA3 K500LP216
    Text: Typ K118UD1B KR119UN1 K131LA1 K131LA2 K131LA4 K131LN1 K131LR1 K131LR3 K131LR4 K131TM2 KR132RU3A,B KR132RU4A,B KM132RU5A,B KR132RU6A,B KM132RU8A,B KM132RU9A,B K136TM2 KR140MA1 KR140UD1A,B KR140UD5A KR140UD6 KR140UD8A,B KR140UD9 KR140UD11 KR140UD1208 K140UD13


    Original     		PDF K118UD1B KR119UN1 K131LA1 K131LA2 K131LA4 K131LN1 K131LR1 K131LR3 K131LR4 K131TM2 K157UD2 K157DA1 CD4026E K176IE12 K190KT2P NE545B K594PA1 K561LN2 KR1531LA3 K500LP216

    64P-5

    Abstract: MOTOROLA 74HC FAMILY psd4xx psd5xx psd403a2 wsi PSD503B1 M68HC11 M68HC11K MC68HC11F1 MC68HC11K1
    Text: MOTOROLA Order this document by: A N 1 2 4 2 / D SEMICONDUCTOR APPLICATION NOTE High Performance M68HC11 System Design Using The WSI PSD4XX and PSD5XX Families by John Bodnar INTRODUCTION This application note covers conversion from a single-chip MC68HC711K4 microcontroller MCU system


    Original     		PDF M68HC11 MC68HC711K4 MC68HC11K1 PSD412A1 64P-5 MOTOROLA 74HC FAMILY psd4xx psd5xx psd403a2 wsi PSD503B1 M68HC11K MC68HC11F1 MC68HC11K1

    psd5xx

    Abstract: AN1242 psd4xx MC68HC11KA4 psd403a2 wsi PSD503B1 M68HC11 M68HC11K MC68HC11F1 64P5
    Text: MOTOROLA Order this document by: AN1242/D SEMICONDUCTOR APPLICATION NOTE High Performance M68HC11 System Design Using The WSI PSD4XX and PSD5XX Families by John Bodnar INTRODUCTION This application note covers conversion from a single-chip MC68HC711K4 microcontroller MCU system


    Original     		PDF AN1242/D M68HC11 MC68HC711K4 MC68HC11K1 PSD412A1 psd5xx AN1242 psd4xx MC68HC11KA4 psd403a2 wsi PSD503B1 M68HC11K MC68HC11F1 64P5

    psd5xx

    Abstract: MC68HC11KA4 MC3401 MC68HC11KRG psd4xx psd403a2 wsi PSD503B1 M68HC11K MC68HC11F1 MC68HC11K4
    Text: Freescale Semiconductor Order this document by: A N 1 2 4 2 / D APPLICATION NOTE High Performance M68HC11 System Design Using The WSI PSD4XX and PSD5XX Families by John Bodnar Freescale Semiconductor, Inc. INTRODUCTION This application note covers conversion from a single-chip MC68HC711K4 microcontroller MCU system


    Original     		PDF M68HC11 MC68HC711K4 MC68HC11K1 PSD412A1 psd5xx MC68HC11KA4 MC3401 MC68HC11KRG psd4xx psd403a2 wsi PSD503B1 M68HC11K MC68HC11F1 MC68HC11K4

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom CI EEPROM 2816 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom

    2816 eeprom

    Abstract: EEPROM 2816 CMOS DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom EEPROM 2816 CMOS DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 720-mil A0-A10 100ns 120ns

    Untitled

    Abstract: No abstract text available
    Text: DS1220AB/AD DALLAS SEMICONDUCTOR FEATURES DS1220AB/AD 16K Nonvolatile SRAM PIN ASSIG NM ENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM • Unlimited write cydes


    OCR Scan     		PDF DS1220AB/AD 24-pin 100ns, 120ns, 150ns, 200ns S1220A 24-PIN

    CI EEPROM 2816

    Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
    Text: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6


    OCR Scan     		PDF DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns 24-PIN 720MIL) CI EEPROM 2816 CI EPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom

    2816 eeprom

    Abstract: IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic
    Text: DS 1220AB/AD DALLAS DS1220AB/AD ^ s e m ic o n d u c to r FEATURES Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF 1220AB/AD DS1220AB/AD 24-pin DS1220AD) DS1220AB) 2816 eeprom IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom 2716 eprom eeprom 2716 eprom 2816 2816 ic

    ML50

    Abstract: seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs
    Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs O ctober 1988 Features • ■ Description High E ndurance Write Cycles • 5S16A : 1,000,000 C ycles/B yte Minim um • 2816A : 10,000 C ycles/B yte Minim um SEEQ 's 5516A an d 2 8 1 6 A are 5 V on !y, 2K x8 electrically


    OCR Scan     		PDF 816A/5516A D400016/C 816A/5516A MD40Q016/C ML50 seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs

    Untitled

    Abstract: No abstract text available
    Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs October 1988 Features Description • High Endurance Write Cycles • 5S16A : 1,000,000 Cycles/Byte Minimum • 2816A: 10,000 Cycles/Byte Minimum ■ On-Chip Timer • Automatic Erase and Write Time Out


    OCR Scan     		PDF 816A/5516A 5S16A 2816AH) MD400016/C

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    seeq 2816A

    Abstract: SEEQ 2816 eeprom 2816 seeq 2816 eeprom 2816A eeprom seeq 5516 eeprom 2816A AH150 16K Electrically Erasable PROMs 2816A
    Text: 2816A/2816AH 5516A/5516AH Technology, Incorporated Timer E 2 16K Electrically Erasable PROMs _August 1992 Features Description • Military and Extended Temperature Range SEEQ's2816A/5516A are 5V only, 2 K x 8 electrically eras­


    OCR Scan     		PDF 816A/2816AH 516A/5516AH s2816A/5516A MD400102/A 2S16A seeq 2816A SEEQ 2816 eeprom 2816 seeq 2816 eeprom 2816A eeprom seeq 5516 eeprom 2816A AH150 16K Electrically Erasable PROMs 2816A

    intel 2816 eeprom

    Abstract: INTEL D 2816 52B13 seeq 52b13 seeq 2816 eeprom 2816A eeprom 2816 eeprom intel SEEQ 2816 intel eeprom 2816 intel 2816
    Text: 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Features Description • Input Latches ■ TTL Byte Erase/Byte Write SEEQ's 52B13 and 52B13H are 2048 x 8 bit, 5 volt elec­ trically erasable programmable read only memories EEPROM with input latches on all address, data and


    OCR Scan     		PDF 52B13/52B13H 52B13H) 52B13 52B13H 52B13. MD400006/C intel 2816 eeprom INTEL D 2816 seeq 52b13 seeq 2816 eeprom 2816A eeprom 2816 eeprom intel SEEQ 2816 intel eeprom 2816 intel 2816

    M2816

    Abstract: 2316a
    Text: M52B13/M52B13H Military Temperature Range E52B13/E52B13H (Extended Temperature Range) 16K Electrically Erasable PRO M _ October 1989 Features Description • Mlitary and Extended Temperature Range — M52B13/M52B13H: -5 5 ° to 1100 C WRITE


    OCR Scan     		PDF M52B13/M52B13H E52B13/E52B13H M52B13/M52B13H: E52B13/E52B13H: M52B13 M52B13H 52B13. 52B13 MD400007/C M2816 2316a

    2816A eeprom

    Abstract: No abstract text available
    Text: G©Q 52B13/52B13H 16K Electrically Erasable P R O M October 1988 Description Features • ■ ■ ■ ■ ■ ■ Input Latches SEEQ's 52B13 and 52B13H are 2 0 4 8 x 8 bit, 5 volt elec­ trically erasable programmable read only memories EEPROM with input latches on all address, data and


    OCR Scan     		PDF 52B13/52B13H 52B13 52B13H 52B13. 52B13 MD400006/C 2816A eeprom

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    intel 2816A

    Abstract: 2816A eeprom M2816 M5213 d52b13
    Text: M52B13/M52B13H Military Temperature Range -E52B13/E52B13H~ (Extended Temperature Range) 16K Electrically Erasable PRO M _ October 1989 Description Features • Miltary and Extended Temperature Range — M52B13/M52B13H: -5S° to 110° C WRITE


    OCR Scan     		PDF M52B13/M52B13H E52B13/E52B13H~ M52B13/M52B13H: E52B13/E52B13H: 52B13H) M52B13 M52B13H temp00007/C M52B13/M52B13H E52B13/E52B13H intel 2816A 2816A eeprom M2816 M5213 d52b13

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D ALLAS DS1220Y 16K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc 1 24 § Vcc A6 1 2 23 1 AB A7 i • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin DS1220Y 24-PIN 720MIL) 010TNA