Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA56
-10mA
-100mA
-100mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
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MMBTA55
Abstract: MMBTA56
Text: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <
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MMBTA55
MMBTA56
OT-23
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <
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MMBTA55
MMBTA56
OT-23
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
OT-23
300mA
MMBTA56
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marking 2GM x
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
marking 2GM x
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x-ray film illuminator
Abstract: 2WAY dashpot damping 751168
Text: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55WT1G
LMBTA56WT1G
S-LMBTA55WT1G
S-LMBTA56WT1G
AEC-Q101
LMBTA55
LMBTA56
SC-70
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2gm transistor
Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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OPA660
OPA622
2gm transistor
ota amplifier
Modulation using OTA
AB-180
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NPN/transistor C 331
Abstract: vacuum tubes AB-180 OPA622 OPA660 ota ic
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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OPA660
OPA622
NPN/transistor C 331
vacuum tubes
AB-180
ota ic
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Marking 2GM
Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
OT-23
Marking 2GM
LMBTA56LT1G
LMBTA56
2GM sot
2GM j
sot23 6 device Marking
2GM 4
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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marking 2GM
Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 2 Unit Collector–Emitter Voltage V CEO –60
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LMBTA55WT1G
LMBTA56WT1G
LMBTA55
LMBTA56
SC-70
LMBTA55WT1G
marking 2GM
2GM transistor
sc70 marking 2H
2GM j
marking 2GM x
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
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Untitled
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT REV. L X 3 0 5 D 8 I D —1 1 4 0 B 04,70 [00,185] 03,00 [00,118] 0 3 ,8 0 [0 0 ,1 5 0 ] 03,50 [00,138] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH lf=2Gm A MAX 635 FORWARD VOLTAGE REVERSE VOLTAGE
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LX305D8IDâ
205II
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USE1201A-A2
Abstract: USE1206A-A2 USE121 USE1212A-A2
Text: USE U.S. Electronics Inc. St. Louis, Missouri, USA. URL: www.us-electronics.com E-mail: sales@us-electronics. com MAGNETIC TRANSDUCER FEATURES Sealed design for wave soldering and washing ☆ Value applying rated voltage 2400Hz, 1/2 duty square wave ★ Value applying (2400Hz, sine wave, m easuring current 60|j A)
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2400Hz,
USE1201A-A2
USE1206A-A2
USE1212A-A2
12VDC
USE121
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USE1201N-A1
Abstract: USE1201N-B1 USE1201N-C1
Text: USE U.S. Electronics Inc. St. Louis, Missouri, USA. URL: www.us-electronics.com E-mail: sales@us-electronics. com MAGNETIC TRANSDUCER FEATURES Sm all and low profile design, wave soldering not allowed Side opening for sound em ission ☆ Value applying rated voltage resonant frequency, 1/2 duty square wave
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USE1201N-A1
USE1201N-C1
USE1201N-B1
U8E12II1N-A1
USE12
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SSB-LX2720SYW
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 3.81 [0.150: 1.27 [0.050] 4 PL S. <3 PL S.) r- 16 1 SSB -LX2720SYW 6,10 [0,240] 12 11 10 9 14 1 REV. PART NUMBER 4,00 [0,157] 0,25 [0,010] t 9.94 [0.391] B.89 [0.350] 7 .6 2 [0 .3 0 0 ] ELEC T R O -O PT IC A L CHARACTERISTICS T A = 2 5 T
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SSB-LX2720SYW
1234-567B
SSB-LX2720SYW
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Untitled
Abstract: No abstract text available
Text: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6
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MMBTA65
MMBTA56
MMBTA55LT1
MMBTA56LT1*
OT-23
O-236AB)
OT-23
BTA55
BTA56
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SSL-LX5573S0D A E.C.N. NUMBER AND REVISION COMMENTS 1 1 .0 8 .0 6 5.00 [0 .1 9 7 ] 6,00 [0 ,2 3 6 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T 7,00 [0 ,2 7 6 ] DATE E.C.N. # 1 1 1 4 9 J PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE
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SSL-LX5573S0D
610nrn
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PDF
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SSL-LX5573SYD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SS L- LX 55 73S YD A E.C.N. NUMBER AND REVISION COMMENTS 1 1 .0 8 .0 6 5.00 [0 .1 9 7 ] 6,00 [0 ,2 3 6 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T 7,00 [0 ,2 7 6 ] DATE E.C.N. # 1 1 1 4 9 J PARAMETER PEAK WAVELENGTH
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SSL-LX5573SYD
YEI10W
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SSB-LX2720SYD
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 3.81 [0.150: 4 1.27 [0.050] PL S. r- 16 1 SSB — LX2720SYD 6,10 [0 ,2 4 0 ] <3 PL S.) 12 11 10 9 14 1 REV. PART NUMBER 4,00 [0 ,1 5 7 ] 0 ,2 5 [0,010] t 9 .9 4 [0 .3 9 1 ] B.89 [0 .3 5 0 ] 7 .6 2 [0 .3 0 0 ] ELEC T R O -O PT IC A L CHARACTERISTICS T A = 2 5 T
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LX2720SYD
1234-567B
SSB-LX2720SYD
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. PART NUMBER SSB-LX2720SQD 3.81 [0.150: 4 1.27 [0.050] PL S. 6,10 [0 ,2 4 0 ] <3 PL S.) r- 16 1 12 11 10 9 14 1 4,00 [0 ,1 5 7 ] 0 ,2 5 [0,010] t 9 .9 4 [0 .3 9 1 ] B.89 [0 .3 5 0 ] 7 .6 2 [0 .3 0 0 ] ELEC T R O -O PT IC A L CHARACTERISTICS T A = 2 5 T
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SSB-LX2720SQD
1234-567B
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