0603CS
Abstract: ATC600S GSP7430 GSP7430-30 RO4003 2160 transistor transistor t 2180
Text: GSP7430-30 InGaP HBT Medium Power Amplifier Product Features ● 0. 1 to 6GHz Frequency Range ● +31 dBm P-1dB at 2GHz ● +51 dBm OIP3 at 2GHz ● 17 dB Gain at 2GHz ● 7 dB Noise Figure Product Description The GSP7430-30 is an unmatched General Purpose Medium Power
|
Original
|
GSP7430-30
GSP7430-30
150mA
0603CS
ATC600S
GSP7430
RO4003
2160 transistor
transistor t 2180
|
PDF
|
GSH912-12
Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Text: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier
|
Original
|
GSH912
1200um
12GHz
GSH912
100MHz
GSH912-12
RG03
GSH912-00
angS12
0841
MAG-S11
unmatched bare amplifier
179-14
|
PDF
|
RF TRANSISTOR 2GHZ
Abstract: ATC520L103KT16T RF Transistor s-parameter
Text: GSA804-00 InGaP HBT Gain Block DIE Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω Product Description The GSA804-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that
|
Original
|
GSA804-00
GSA804-00
140UM.
100um
RF TRANSISTOR 2GHZ
ATC520L103KT16T
RF Transistor s-parameter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUF-6000 2GHz to 16GHz Broadband pHEMT Amplifier SUF-6000 Proposed 2GHz to 16GHz BROADBAND pHEMT AMPLIFIER Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2GHz to 16GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active
|
Original
|
SUF-6000
16GHz
SUF-6000
14GHz
EDS-105420
|
PDF
|
s parameters 4ghz
Abstract: GSH904-89 MAG-S22 s 0934
Text: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB
|
Original
|
GSH904-89
GSH904-89
100MHz
s parameters 4ghz
MAG-S22
s 0934
|
PDF
|
GSA804-12
Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
Text: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die
|
Original
|
GSA804-12
GSA804-12
s parameters 4ghz
4ghz s parameters transistor
4ghz transistor n
ATC520L103KT16
|
PDF
|
bipolar transistor ghz s-parameter
Abstract: RF Transistor s-parameter HBT transistor bipolar transistor s-parameter GSA503-00
Text: GSA503-00 InGaP HBT Gain Block DIE Product Features ● 0.01MHz to 4 GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 20 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Bare die Applications ● Mobile infrastructure
|
Original
|
GSA503-00
01MHz
GSA503-00
bipolar transistor ghz s-parameter
RF Transistor s-parameter
HBT transistor
bipolar transistor s-parameter
|
PDF
|
GSA603-12
Abstract: GSA-603-12 gsa603
Text: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die
|
Original
|
GSA603-12
GSA603-12
GSA-603-12
gsa603
|
PDF
|
2SC5258
Abstract: No abstract text available
Text: TOSHIBA 2SC5258 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5258 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.5dB f = 2GHz : Gain = lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SC5258
2SC5258
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5259 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) 1-0.5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
|
OCR Scan
|
2SC5259
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO
|
OCR Scan
|
2SC5256
|
PDF
|
VHF-UHF Band Low Noise Amplifier
Abstract: 2SC5263
Text: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SC5263
VHF-UHF Band Low Noise Amplifier
2SC5263
|
PDF
|
transistor H1A
Abstract: 2SC5256 marking H1A h1a transistor
Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO
|
OCR Scan
|
2SC5256
transistor H1A
2SC5256
marking H1A
h1a transistor
|
PDF
|
KTC3660U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3660U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. TENTATIVE FEATURES ・Low Noise Figure, High Gain. ・NF=1.4dB f=2GHz , |S21e|2=13.5dB (f=2GHz). E M RATING UNIT Collector-Base Voltage VCBO
|
Original
|
KTC3660U
KTC3660U
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5255 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5255 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SC5255
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,
|
Original
|
RNR-T45-97-B-375
BFG410W
BFG410W
-31dB,
|
PDF
|
2SC5260
Abstract: OS63
Text: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
|
OCR Scan
|
2SC5260
Weig84
2SC5260
OS63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5260 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SC5260
|
PDF
|
ATC520L103KT16T
Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
Text: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die
|
Original
|
GSA804-89
OT-89
GSA804-89
ATC520L103KT16T
Amplifier SOT-89 c4
s parameters 4ghz
ATC520L103KT16
|
PDF
|
transistor marking MK
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High. Gain : NF = 1.5dB f=2GHz : |S21el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
|
OCR Scan
|
2SC5256F
S21el2=
20mAlease
transistor marking MK
|
PDF
|
marking IAY
Abstract: 2SC5324
Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2l e|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
2SC5324
marking IAY
2SC5324
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NJG1126HB6 2GHz BAND LOW NOISE AMPLIFIER • GENERAL DESCRIPTION NJG1126HB6 is a low noise amplifier GaAs MMIC designed for 2GHz band application, and 1.7GHz to 3.8GHz operation with modified schematic. This IC has the function which bypasses LNA, and high gain mode or low gain
|
Original
|
NJG1126HB6
NJG1126HB6
|
PDF
|
2SC5317FT
Abstract: No abstract text available
Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SC5317FT
2SC5317FT
|
PDF
|
MT4S102T
Abstract: TOSHIBA MICROWAVE AMPLIFIER 0-58dB
Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES • Low Noise Figure :NF=0.58dB @f=2GHz • High Gain:|S21e| =16.0dB (@f=2GHz) 4 3 P 8 1 2 0.8±0.05 1.2±0.05
|
Original
|
MT4S102T
MT4S102T
TOSHIBA MICROWAVE AMPLIFIER
0-58dB
|
PDF
|
