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    2G10 Search Results

    2G10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    57102-G10-25LF Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Through Hole, Double Row, 50 Positions, 2.00mm (0.078in) Pitch.. Visit Amphenol Communications Solutions
    53612-G10-6LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Eject Latch Shrouded Header, Through Hole, Vertical, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    53612-G10-8LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Eject Latch Shrouded Header, Surface Mount, Vertical, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    57102-G10-06LF Amphenol Communications Solutions Header, Through Hole, Double row, 12, 2mm (0.079in), Vertical Visit Amphenol Communications Solutions
    54102-G1000LF Amphenol Communications Solutions BERGSTRIP 0.100-ALTERNATE 77313-102-00LF Visit Amphenol Communications Solutions
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    2G10 Price and Stock

    Nichicon Corporation UVY2G100MPD1TD

    CAP ALUM 10UF 20% 400V RADIAL TH
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    DigiKey UVY2G100MPD1TD Cut Tape 11,321 1
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    UVY2G100MPD1TD Ammo Pack 11,000 500
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    Avnet Abacus UVY2G100MPD1TD 48 Weeks 4,000
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    Chip One Stop UVY2G100MPD1TD Bulk 1,975
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    Johanson Dielectrics Inc SCDP302G100K4GV001E

    CAP CER 10PF 250VAC C0G/NP0 1808
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    DigiKey SCDP302G100K4GV001E Cut Tape 4,585 1
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    SCDP302G100K4GV001E Digi-Reel 4,585 1
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    SCDP302G100K4GV001E Reel 2,000 2,000
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    QST Corporation QT532G-10.000MAHJ-T

    5.0x3.2 XTAL 30ppm 30ppm 18pF
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    DigiKey QT532G-10.000MAHJ-T Cut Tape 1,000 1
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    QT532G-10.000MAHJ-T Digi-Reel 1,000 1
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    Sanyo-Denki Co Ltd 9G0812G101

    FAN AXIAL 80X38MM 12VDC WIRE
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    DigiKey 9G0812G101 Box 561 1
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    Chip One Stop 9G0812G101 Bulk 5
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    Master Electronics 9G0812G101
    • 1 $27.19
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    Neutron USA 9G0812G101 50
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    Sager 9G0812G101 81 1
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    Nichicon Corporation UPJ2G100MHD1TO

    CAP ALUM 10UF 20% 400V RADIAL TH
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    DigiKey UPJ2G100MHD1TO Cut Tape 492 1
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    2G10 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2G10 RPM Micro Standard / Fast Recovery Axial Lead Rectifier Scan PDF
    2G101 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G101 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G101 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G102 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G102 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G102 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1024 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G1024 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G1024 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G1024 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1024 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1025 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G1025 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G1025 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G1025 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1025 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1026 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2G10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2G109

    Abstract: No abstract text available
    Text: 2G109 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G109 PDF

    BA-2G10UW

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BA-2G10UW SINCE 1981 ● Features : 1. Emitting area : 25.5x8.8 mm) 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions : 11.00(.433


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    BA-2G10UW BA-2G10UW PDF

    6P18P

    Abstract: 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103 2G102 2n617
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2N2627 2N617 2N968 2G101 2G101 2G102 2G102 2N1646 2N725 MA903 ~~:1°io 15 • · 20 2N741 2N984 GT31 GT31 2N2199 2N3449 2N960 2N2487 ~~~~~~ 25 30 2N2455 2N2456 NKT352 2N311 2N519 2N828A NKTI3 OC45N ~~~~gA 35


    Original
    2N2627 2N617 2N968 2G101 2G102 2N1646 2N725 MA903 6P18P 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2G1024 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G1024 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2G1026 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G1026 PDF

    2G1025

    Abstract: No abstract text available
    Text: 2G1025 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G1025 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2G108 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G108 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2G1027 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2G1027 PDF

    179120

    Abstract: E521
    Text: Extract from the online catalog PC 6-16/ 2-G-10,16 Order No.: 1913646 The illustration shows an 8-position version Header, Rated voltage III/2 : 1000 V, Number of positions: 2, Pitch:


    Original
    2-G-10 CC-2002) 179120 E521 PDF

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog IPCV 16/ 2-G-10,16 Order No.: 1969690 The figure shows a 5-pos. version of the product Header, Nominal current: 76 A, Nom. voltage: 1000 V, Pitch: 10.16


    Original
    2-G-10 CC-2009) -ST-10 -G-10 PDF

    STC1015E

    Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 STC1015E DTS104 ASY82 DTS103 DTS106 DTS108 NKT12 PDF

    X55a

    Abstract: 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 X55a 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76 PDF

    2N5036

    Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165 PDF

    TLO 61

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF

    2S711

    Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2S711 NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434 PDF

    bc156 Transistor"

    Abstract: 2n2272 BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA bc156 Transistor" BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013 PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan
    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538 PDF

    SFT308

    Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B SFT308 SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204 PDF

    2N5735

    Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2N5735 bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107 PDF

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan
    NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m PDF

    A154

    Abstract: GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 A154 GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS PDF

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302 PDF

    GT123

    Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan
    NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285 PDF

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


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    PDF