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    2G10 Search Results

    2G10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    57102-G10-25LF Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Through Hole, Double Row, 50 Positions, 2.00mm (0.078in) Pitch.. Visit Amphenol Communications Solutions
    53612-G10-6LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Eject Latch Shrouded Header, Through Hole, Vertical, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    53612-G10-8LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Eject Latch Shrouded Header, Surface Mount, Vertical, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    57102-G10-06LF Amphenol Communications Solutions Header, Through Hole, Double row, 12, 2mm (0.079in), Vertical Visit Amphenol Communications Solutions
    54102-G1000LF Amphenol Communications Solutions BERGSTRIP 0.100-ALTERNATE 77313-102-00LF Visit Amphenol Communications Solutions
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    2G10 Price and Stock

    Cal-Chip Electronics GMC10CG332G100NT

    CAP CER 3300PF 100V C0G/NP0 0603
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    DigiKey GMC10CG332G100NT Reel 44,000 4,000
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    GMC10CG332G100NT Reel 4,000 4,000
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    Cal-Chip Electronics GMC21CG222G100NT

    CAP CER 2200PF 100V C0G/NP0 0805
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    DigiKey GMC21CG222G100NT Reel 24,000 4,000
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    Acopian Power Supplies B12G100

    AC/DC CONVERTER
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    DigiKey B12G100 Bulk 996 1
    • 1 $286.65
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    Nichicon Corporation LLS2G101MELZ

    CAP ALUM 100UF 20% 400V SNAP TH
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    DigiKey LLS2G101MELZ Bulk 708 1
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    Newark LLS2G101MELZ Bulk 237 1
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    Avnet Abacus LLS2G101MELZ 32 Weeks 250
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    New Advantage Corporation LLS2G101MELZ 1,500 1
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    FTS QT532G-10.000MBBK-T

    5.0X3.2 GLASS SEAL MHZ QUARTZ XT
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    DigiKey QT532G-10.000MBBK-T 500 1
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    Find more 2G10 price and stock on Findchips.com

    2G10 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2G10 RPM Micro Standard / Fast Recovery Axial Lead Rectifier Scan PDF
    2G101 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G101 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G101 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G102 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G102 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G102 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1024 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G1024 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G1024 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G1024 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1024 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1025 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2G1025 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2G1025 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2G1025 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1025 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2G1026 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2G10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2G109

    Abstract: No abstract text available
    Text: 2G109 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G109

    BA-2G10UW

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BA-2G10UW SINCE 1981 ● Features : 1. Emitting area : 25.5x8.8 mm） 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions : 11.00(.433


    Original     		PDF BA-2G10UW BA-2G10UW

    6P18P

    Abstract: 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103 2G102 2n617
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2N2627 2N617 2N968 2G101 2G101 2G102 2G102 2N1646 2N725 MA903 ~~:1°io 15 • · 20 2N741 2N984 GT31 GT31 2N2199 2N3449 2N960 2N2487 ~~~~~~ 25 30 2N2455 2N2456 NKT352 2N311 2N519 2N828A NKTI3 OC45N ~~~~gA 35


    Original     		PDF 2N2627 2N617 2N968 2G101 2G102 2N1646 2N725 MA903 6P18P 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103

    Untitled

    Abstract: No abstract text available
    Text: 2G1024 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G1024

    Untitled

    Abstract: No abstract text available
    Text: 2G1026 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G1026

    2G1025

    Abstract: No abstract text available
    Text: 2G1025 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G1025

    Untitled

    Abstract: No abstract text available
    Text: 2G108 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16ã V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G108

    Untitled

    Abstract: No abstract text available
    Text: 2G1027 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2G1027

    179120

    Abstract: E521
    Text: Extract from the online catalog PC 6-16/ 2-G-10,16 Order No.: 1913646 The illustration shows an 8-position version Header, Rated voltage III/2 : 1000 V, Number of positions: 2, Pitch:


    Original     		PDF 2-G-10 CC-2002) 179120 E521

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog IPCV 16/ 2-G-10,16 Order No.: 1969690 The figure shows a 5-pos. version of the product Header, Nominal current: 76 A, Nom. voltage: 1000 V, Pitch: 10.16


    Original     		PDF 2-G-10 CC-2009) -ST-10 -G-10

    STC1015E

    Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 STC1015E DTS104 ASY82 DTS103 DTS106 DTS108 NKT12

    X55a

    Abstract: 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 X55a 2sc283 PET8004 BF123 MT1060 310M GW 9n BFW74 2N744 POWER DISS BFW76

    2N5036

    Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N5036 TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165

    TLO 61

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    2S711

    Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2S711 NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434

    bc156 Transistor"

    Abstract: 2n2272 BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA bc156 Transistor" BC199B MM1758 TRANSISTOR BC 206 PNP 10G1051 D10B1055 D10G1051 D10G1052 PMT013

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538

    SFT308

    Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B SFT308 SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204

    2N5735

    Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2N5735 bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m

    A154

    Abstract: GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 2SA372 U7003 2SA446 450MI 450MSA 10Om0 2N960/46 2N962/46 460MI 460M5 A154 GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302

    GT123

    Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285

    2n1620

    Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E


    OCR Scan     		PDF