Ag9400
Abstract: Ag9400-2BR AG9405-2BR Ag9412-2BR Ag9424 Ag9412-S Ag9424-S Ag9405-S Ag9400-S ethernet transformer centre tap
Text: V2.3 May 2010 Datasheet Silvertel Ag9400 Power-Over-Ethernet Module 1 Features Pb ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required ¾ Short-circuit protection
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Ag9400
IEEE802
Ag9400
Ag9400-2BR
AG9405-2BR
Ag9412-2BR
Ag9424
Ag9412-S
Ag9424-S
Ag9405-S
Ag9400-S
ethernet transformer centre tap
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Ag9412
Abstract: AG9405-2BR Ag9412-S Ag9400 Ag9412-2BR Ag9400-2BR Ag9400-S Ag9405-S RJ45 socket TRANZORB
Text: V1.0 April 2008 Data Sheet Silver Ag9400 TELECOM Power-Over-Ethernet Module Pb 1. Features ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required
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Ag9400
IEEE802
Ag9400
Ag9412
AG9405-2BR
Ag9412-S
Ag9412-2BR
Ag9400-2BR
Ag9400-S
Ag9405-S
RJ45 socket
TRANZORB
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Untitled
Abstract: No abstract text available
Text: TPD3E001 LOW-CAPACITANCE 3-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES www.ti.com SLLS683D – JULY 2006 – REVISED APRIL 2007 FEATURES APPLICATIONS • • • • • • • • • • • • • • • ESD Protection Exceeds
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TPD3E001
15-kV
SLLS683D
TPD2E001,
TPD4E001,
TPD6E001
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Ag9605-2BR
Abstract: Ag9600 Ag9600-S Ag9612-2BR ag9605 Ag9605-S TRANZORB Ag9612-S Ag9603-2BR Ag9600-2BR
Text: V1.2 August 2009 Datasheet Ag9600 Silvertel Power-Over-Ethernet Module 1. Features Pb ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required
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Ag9600
IEEE802
Ag9600
Ag9605-2BR
Ag9600-S
Ag9612-2BR
ag9605
Ag9605-S
TRANZORB
Ag9612-S
Ag9603-2BR
Ag9600-2BR
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2SK374
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)
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2SK374
2SK374
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2SK2593
Abstract: SC-75
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55
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2SK2593
2SK2593
SC-75
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1-57748-0
Abstract: DFFC 0.5-1.0 1480000000
Text: SLA/BLA - Die Einzigartigen Unimate Range - SLA/BLA Socket blocks BLAC R Socket blocks BLAC BR Crimp contacts for BLAC 5.08 Technical Data VDE Rated voltage V 250* Rated current A 14 Clamping range max. mm2/AWG 2.5 *Overvoltage category III / Pollution severity 3
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2SK663
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 3 2 Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55
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2SK663
2SK663
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Untitled
Abstract: No abstract text available
Text: 2SK663 Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 ● Downsizing of sets by S-mini type package and automatic insertion 0.3 -0 Low noise type
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2SK663
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2SK2593
Abstract: SC-89 2BR marking
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 0.28±0.05 (0.44) 3° (0.44) 1 2 1.60±0.05 (0.80) 3 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05
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2SK2593
2SK2593
SC-89
2BR marking
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2SK0663
Abstract: 2SK663 2BR marking
Text: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ● Low noise-figure (NF)
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2SK0663
2SK663)
2SK0663
2SK663
2BR marking
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2SK2593
Abstract: SC-89
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03
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2SK2593
2SK2593
SC-89
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Junction-FET
Abstract: Silicon Junction FETs p channel Junction-FET 2SK2593 SC-89
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1 2 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 1.60+0.05 – 0.03 Gate to Source voltage Drain current Gate current Allowable power dissipation
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2SK2593
Junction-FET
Silicon Junction FETs
p channel Junction-FET
2SK2593
SC-89
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2SK0374
Abstract: 2SK374
Text: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)
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2SK0374
2SK374)
2SK0374
2SK374
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2SK0663
Abstract: 2SK663
Text: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage
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2SK0663
2SK663)
2SK0663
2SK663
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO
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2SK0374
2SK374)
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2SK0374
Abstract: 2SK374 2BR marking
Text: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF)
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2SK0374
2SK374)
2SK0374
2SK374
2BR marking
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 ● Low noies, high gain ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic
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2SK2593
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2BR marking
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 5° 0.4±0.2 2.8+0.2 –0.3 ● Low noise-figure (NF)
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2SK0374
2SK374)
2BR marking
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Untitled
Abstract: No abstract text available
Text: TPD3E001 LOW-CAPACITANCE 3-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES www.ti.com SLLS683D – JULY 2006 – REVISED APRIL 2007 FEATURES APPLICATIONS • • • • • • • • • • • • • • • ESD Protection Exceeds
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TPD3E001
15-kV
SLLS683D
TPD2E001,
TPD4E001,
TPD6E001
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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H7545
Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Text: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60
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BCX20
BSS64
SOA05
SQA06
H7545
TR BC 817-25
BCV72
BCW31
BCW32
70G45
B 250 C 100 K4
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MA56
Abstract: 2SK321 2SK374 panasonic capacitor FL
Text: P A N A S O N IC I N D L /E L E K iS E M I } 7SC D | b T B 5 fl5 M D D C H b fla 2SK321 2SK321 '> ij zi > N f v N-Channel Junction /A w lt-iS it^ l^ iliffl/W id e -B a n d , Low-Noise Amplifier > ^ f fl/V id e o Camera • # • ^ ¡/F e a tu r e s A £ # l l : C is s * ' V J ' ? V ^ 0 / L o w
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2SK321
MA56
2SK321
2SK374
panasonic capacitor FL
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Vishay Roederstein EBR
Abstract: roederstein capacitor tantalum roederstein tantalum 47402 156025 roederstein tantalum capacitors TD5 capacitors 335002 ROEDERSTEIN ETD type
Text: VISHAY INTER/ ROEDERSTEIN L2E J> 7fl21b24 DDD1R7S 352 Tantalum Chip Capacitors Sintered Anode, Solid Semiconductor Electrolyte, +125°C ETD Structure: Dimensions Tantalum chip capacitors with sintered anode and solid semiconductor elec trolyte, flame retardant encapsulation
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7fi21b24
7fl21b24
Vishay Roederstein EBR
roederstein capacitor tantalum
roederstein tantalum
47402
156025
roederstein tantalum capacitors
TD5 capacitors
335002
ROEDERSTEIN
ETD type
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