Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2SK2593
Abstract: SC-89
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03
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2SK2593
2SK2593
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Untitled
Abstract: No abstract text available
Text: 2SK2593 Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 1.6±0.15 ● High gate-drain voltage VGDO ● Downsizing 0.4 +0.1 0.2 -0.05 0.8±0.1 1 3 0.5 noise, high gain 1.0±0.1
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2SK2593
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2SK2593J
Abstract: SC-89
Text: Silicon Junction FETs Small Signal 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05 2 0.27±0.02 0 to 0.02 (0.50)(0.50) (0.80)
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2SK2593J
2SK2593J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF
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2SK2593J
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2SK2593
Abstract: SC-75
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55
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2SK2593
2SK2593
SC-75
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2002/95/EC)
2SK2593G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF
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2002/95/EC)
2SK2593G
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2SK2593G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2SK2593G
2SK2593G
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2SK2593J
Abstract: TY5 marking
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ue pl d in an c
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2SK2593J
2SK2593J
TY5 marking
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2SK2593J
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO
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2SK2593J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01
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2SK2593J
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 ● Low noies, high gain ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic
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2SK2593
Abstract: SC-89 2BR marking
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 0.28±0.05 (0.44) 3° (0.44) 1 2 1.60±0.05 (0.80) 3 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05
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2SK2593
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SC-89
2BR marking
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2SK2593G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in an c
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2002/95/EC)
2SK2593G
2SK2593G
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2SK2593
Abstract: SC-75
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55
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SC-75
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Junction-FET
Abstract: Silicon Junction FETs p channel Junction-FET 2SK2593 SC-89
Text: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1 2 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 1.60+0.05 – 0.03 Gate to Source voltage Drain current Gate current Allowable power dissipation
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2SK2593
Junction-FET
Silicon Junction FETs
p channel Junction-FET
2SK2593
SC-89
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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2SK3585
Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)
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PUB4753
PU7457)
PUB4701
PUB4702
450/600o
380/680o
SIP10-A1
2SK0301
2SK663)
2SK301)
2SK3585
Infrared-Sensor
2SK3578
2SK3584
2SK3583
PUB4701
2SK1104
2SK1860
2SK3585 equivalent
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2SK2593
Abstract: SC-75A
Text: Panasonic S ilic o n Junction FETs S m all Sign al 2SK2593 Silicon N -C h an n el Junction Unit : mm For low-frequency amplification For switching 0 .4 0 .8 ± 0.1 0 .4 • Features • Low noise, high gain • High gate-drain voltage V g d o • Downsizing of sets by mini-type package and automatic insertion by
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2SK2593
SC-75A
2SK2593
SC-75A
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Untitled
Abstract: No abstract text available
Text: Panasonic S ilic o n Junction FETs Small Signal 2SK2593 Silicon N -C hannel Junction Unit : mm For low-frequency amplification For switching • Features • Low noise, high gain • High gate-drain voltage V gdo • Downsizing of sets by mini-type package and automatic insertion by
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2SK2593
SC-75A
125fication
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