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    2SK587 Search Results

    2SK587 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK587 Unknown FET Data Book Scan PDF

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    2SK587

    Abstract: No abstract text available
    Text: SONY C O R P /C O M P O N E N T PRODS 7 7 DE ^ 5 3 5 5 3 5 3 0 D 0 I]a 3 a □ W T '3 l~ < 2 5 Description: The 2SK587 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Plastic mold packaging has been adopted to reduce cost.


    OCR Scan     		PDF 2SK587 12GHz 5-85-2M

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


    OCR Scan     		PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK566

    Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
    Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET


    OCR Scan     		PDF 2SK676 power12 GD02137 T-31-25 12GHz 2SK566 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1