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    2SK368 Search Results

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    2SK368 Price and Stock

    Fuji Electric Co Ltd 2SK3688-01L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3688-01L 73
    • 1 $6.363
    • 10 $6.363
    • 100 $3.9239
    • 1000 $3.9239
    • 10000 $3.9239
    		Buy Now

    Toshiba America Electronic Components 2SK368-Y(TE85L,F)

    JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SK368-Y(TE85L,F) 2,550
    • 1 -
    • 10 -
    • 100 $3.1
    • 1000 $2.76
    • 10000 $2.73
    		Buy Now

    2SK368 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK368 Toshiba N-Channel MOSFET Original PDF
    2SK368 Unknown Scan PDF
    2SK368 Unknown FET Data Book Scan PDF
    2SK368 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK368 Toshiba Silicon N channel field effect transistor for audio frequency and high voltage amplifier applications, constant current applications Scan PDF
    2SK368 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK3680-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3680-01 Fuji Electric Power Amplifier, 500V 52A 600W, MOS-FET N-Channel enhanced Original PDF
    2SK3681-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3681-01 Fuji Electric Power Amplifier, 600V 43A 600W, MOS-FET N-Channel enhanced Original PDF
    2SK3682-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3683 Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
    2SK3683-01MR Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
    2SK3683-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK3684-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3684-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3684-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3685-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3686-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK3687-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF

    2SK368 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    125MH

    Abstract: No abstract text available
    Text: 2SK3685-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3685-01 125MH

    A3020v

    Abstract: mosfet 600V 50A
    Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3688-01L A3020v mosfet 600V 50A

    2SK3686-01

    Abstract: 2SK3686 diode 60V 8A mosfet 600V 7A N-CHANNEL TO
    Text: 2SK3686-01 FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3686-01 O-220AB 2SK3686-01 2SK3686 diode 60V 8A mosfet 600V 7A N-CHANNEL TO

    2SK3682-01

    Abstract: No abstract text available
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3682-01 500V/0.38Ω/19A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Symbols Ratings Units V DS 500 V Continuous Drain Current ID ±19 A


    Original     		PDF 2SK3682-01 00V/0 38/19A) O-220 MT5F12580 2SK3682-01

    2SK368

    Abstract: 2SK3683
    Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK368 2SK368 2SK3683

    FUJI ELECTRIC

    Abstract: 2SK3684-01L
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3684-01L,S,SJ 500V/0.38Ω/19A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)


    Original     		PDF 2SK3684-01L 00V/0 38/19A) MT5F12583 FUJI ELECTRIC

    2SK3682-01

    Abstract: Vds500V
    Text: 2SK3682-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3682-01 O-220AB 2SK3682-01 Vds500V

    Untitled

    Abstract: No abstract text available
    Text: 2SK3682-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3682-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3686-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3686-01 O-220AB

    2SK3681-01

    Abstract: 2SK3681-01 equivalent
    Text: 2SK3681-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3681-01 2SK3681-01 2SK3681-01 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK3688-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3688-01L

    mosfet 300V 10A

    Abstract: No abstract text available
    Text: 2SK3689-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3689-01 mosfet 300V 10A

    diode 60V 8A

    Abstract: diode sj mosfet 10a 600v Transistor SJ 2SK3688-01L
    Text: 2SK3688-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3688-01L diode 60V 8A diode sj mosfet 10a 600v Transistor SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)


    Original     		PDF 2SK368 O-236MOD SC-59

    2SK3680-01

    Abstract: n-channel 250V power mosfet VDS50
    Text: 2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators


    Original     		PDF 2SK3680-01 2SK3680-01 n-channel 250V power mosfet VDS50

    2SK3685-01

    Abstract: MJ205
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3685-01 500V/0.38Ω/19A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current


    Original     		PDF 2SK3685-01 00V/0 38/19A) O-247 MT5F12584 2SK3685-01 MJ205

    2SK3688-01L

    Abstract: FUJI MOSFET
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3688-01L,S,SJ 600V/0.54Ω/16A 1) Package T-PACK L・・・ See Page 2/4 S ・・・ See Page 3/4 SJ・・・ See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)


    Original     		PDF 2SK3688-01L 00V/0 54/16A) MT5F12587 FUJI MOSFET

    2SK3683

    Abstract: 2SK3683-01MR
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current


    Original     		PDF 2SK3683-01MR 00V/0 38/19A) O-220F15R MT5F12582 2SK3683 2SK3683-01MR

    2sk3687-01mr

    Abstract: No abstract text available
    Text: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3687-01MR O-220F 2sk3687-01mr

    A3020v

    Abstract: 2SK3687-01MR equivalent 2SK3687-01MR 2sk3687
    Text: 2SK3687-01MR FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3687-01MR O-220F 2SK3687-01MR A3020v 2SK3687-01MR equivalent 2sk3687

    Untitled

    Abstract: No abstract text available
    Text: 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications P4 Switching regulators DC-DC converters


    Original     		PDF 2SK3684-01L

    2SK368

    Abstract: No abstract text available
    Text: T O S H IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS Unit in mm CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • High Breakdown Voltage : VQ Dg= —100V Min.


    OCR Scan     		PDF 2SK368 -100V to-236mod SC-59 2SK368

    U8 marking

    Abstract: No abstract text available
    Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR i < ; SILICON N CHANNEL JUNCTION TYPE \c 3 f i f t Unit in mm AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS + 0.5 2.5 - 0.3 • • • High Breakdown Voltage : V q d S “ —100V Min.


    OCR Scan     		PDF 2SK368 --100V --80V) U8 marking

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • High Breakdown Voltage : VGDg = —100V Min. •


    OCR Scan     		PDF 2SK368 O-236MOD