Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2178 Search Results

    2SK2178 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2178 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK2178 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK2178 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 N-Channel Enhancement type OUTLINE DIMENSIONS F2E50VX2 Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2178 F2E50VX2)

    2SK2178

    Abstract: F2E50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 2A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2178 F2E50VX2) 2SK2178 F2E50VX2

    power mosfet 220 v 1a

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 2A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2178 F2E50VX2) power mosfet 220 v 1a

    2SK2178

    Abstract: F2E50VX2 2A 500V MOSFET
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2178 F2E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 2A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2178 F2E50VX2) 2SK2178 F2E50VX2 2A 500V MOSFET

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    MOSFET IRF 630

    Abstract: No abstract text available
    Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l


    Original
    PDF

    2SK1672

    Abstract: 2SK1533 2sk2280 2SK228
    Text: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully


    Original
    PDF 2SK1194 2SK1195 2SK1533 2SK1672 2SK1861 2SK1931 2SK2177 2SK2178 2SK2179 2SK2279 2sk2280 2SK228

    Untitled

    Abstract: No abstract text available
    Text: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C


    OCR Scan
    PDF 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186

    2SK2178

    Abstract: No abstract text available
    Text: O U T L IN E D IM E N S IO N S 2SK2178 F2E 50V X 2 500V 2a Lead type is available. I S e e P. 12, 7-1 R A T IN G S Absolute Maximum R atings m Item s (Tc=25°C) . se Symbol S to ra g e T em perature T s tg •f' -V T ch ^i'Jn.iÉT Channel T em perature


    OCR Scan
    PDF 2SK2178 F2E50VX2) 2SK2178

    V9220

    Abstract: No abstract text available
    Text: •• • VX-ÏÏ'>'J-X VX-I SERIES POWCT MOSFET O U T L IN E D IM E N S IO N S Case '• E - pack 2SK2178 F2E50VX2 6.6 t 0-2 2.55: 0.2 0 .5 *0 ’ 500v 2 a E IA J No. V Date code a; / / / ' •; 0.6 ± 0.2 24 0.5 1.1*0 2 ' [U n it •' mm] 4 -rtbn i t .


    OCR Scan
    PDF 2SK2178 F2E50VX2) V9220

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30


    OCR Scan
    PDF STO-220 2SK2177 2SK2178 2SK2179 2SK2181 2SK2184 2SK2187 2SK2191 FTO-220

    2SK2178

    Abstract: No abstract text available
    Text: V X - I v U - X / t 7 —MOSFET asiT.'t VX-1 SERIES POWER MOSFET • W f f c O U T L IN E D IM E N S IO N S 2SK2178 F 2 E 5 0 V X 2 500v 2a ,j _ Ky j -/ t 0 P l l , 7-1 £ Lead type is available. ■ < ti £ \ \ 0 ' S e e P. 11, 7-1 R A T IN G S A b s o lu te Maxim um R a tin g s


    OCR Scan
    PDF 2SK2178 F2E50VX2) 2SK2178

    2SK2188

    Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
    Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)


    OCR Scan
    PDF 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2188 F10W90HVX2 2SK2669 2SK2196 F20w FP7W90HVX2