1A smd mosfet

Abstract: 2SK2094
Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

2SK2094

Contextual Info: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

K2094

Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm available in CPT F5 package 2SK2094 (CPT F5) package marking: K2094*Q , where ★ is hFE code and □ is lot number > +0 2 CO.5 5 * °72 01 1 -0 low on-resistance Y 0.5 ± 0.1 r fast switching speed

2SK2094F5

Contextual Info: b7 / T ransistors 2SK2094F5 2SK2094F5 V 1 - I > N f + *;U M O S W L % m . b T s V Z * Silicon N-channel MOSFET ^ -f 7 f - /Switching • £l-JJi'\|'j£0/D im en sio ns U n it: mm) • « * 1) 2) I S S I X < Ko 3) S O A M a I ' c 4) (4 v e it ). 5) 6) • Features

K2094

Abstract: 2SK2094
Contextual Info: 2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 2.3 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed.

K2094

Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)

2SK2503

Abstract: 2A 500V MOSFET 500v 2A mosfet transistors mosfet 500v 2A 100V 8A N-Channel MOSFET
Contextual Info: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

mosfet

Abstract: 2SK2094
Contextual Info: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

2SK2094

Abstract: 37846E 2SK20 2sk209
Contextual Info: SPICE PARAMETER 2SK2094 by ROHM TR Div. * 2SK2094 NMOSFET model * Date: 2006/10/16 * This model includes a diode between source and drain. *D G S .SUBCKT 2SK2094 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

2SK2094

Contextual Info: Transistors Small switching 60V, 2A 2SK2094 • Features •E x te rn a l dim ensions (Unit: mm) 1 ) Low on-resistance. 2) 2 3+0.2 ¿ -P .1 6.5±0.2 High-speed switching. + 1 0,2 3) W ide SOA (safe operating area). 4) Low-voltage drive (4V). C01— 5) Easily designed drive circuits.

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK2094 Features TO-252 Low on-resistance Fast switching speed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low-voltage drive 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15

Contextual Info: 2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 2.3 (1) (2)Drain (3)Source 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed.

Contextual Info: Transistors Small switching 60V, 2A 2SK2094 • F e a tu re s • E x t e r n a l d im e n s io n s (Unit: mm) 1 ) L o w o n -re sista n ce . 3) 2 3 + 0 .2 H ig h -s p e e d sw itch in g . — W id e S O A (safe o p e ra tin g area). 4) L o w -v o lta g e d riv e (4V).

Contextual Info: Transistors Small switching 60V, 2A 2SK2094 •Features 1) 2) 3) 4) 5) 6) •E x te rn a l dim ensions (Unit: mm) Low on-resistance. High-speed switching. W ide SOA (safe operating area). Low-voitage drive (4V). Easily designed drive circuits. Easy to use in parallel.

2SK2261

Abstract: 2SK2104 2SK1973 2SK1974 2SK1976 2SK2094 2SK2095 2SK2176 2SK2262 2SK1975
Contextual Info: POWER MOSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference N te o [v] 2 5 10 450 500 2SK1976 T0-220FP

2SK2261

Abstract: 2SK1973 2SK1974 2SK1975 2SK1976 2SK2094 2SK2095 2SK2104 2SK2176 2SK2262
Contextual Info: POWER MÜSFET Excellent switching capability with low on resistance, suitable for switching power supply or DC-DC converter. Taping products for use on an automatic insert machine are also available. Quick reference 'N / ceo [V] 60 450 500 2SK2176 T0-220FP

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Contextual Info: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

2SK2430

Abstract: 2SK2042 2SK2306 2SK2041 2SK2094 2SK2103 2SK2104 2SK2105 2SK2463
Contextual Info: R D N fn POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts