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    2SK193 Search Results

    2SK193 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1934-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3P, /Tube Visit Renesas Electronics Corporation
    2SK1933-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK193-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK193 Price and Stock

    Fuji Electric Co Ltd 2SK1936-01

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    Quest Components 2SK1936-01 301
    • 1 $5.415
    • 10 $5.415
    • 100 $3.3393
    • 1000 $2.9783
    • 10000 $2.9783
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    FUJITSU Limited 2SK1937

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1937 137
    • 1 $10.26
    • 10 $10.26
    • 100 $6.327
    • 1000 $6.327
    • 10000 $6.327
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    Toshiba America Electronic Components 2SK1930

    SILICON N-CHANNEL MOS TYPE (PI-MOSII5) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK1930 990
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    Toshiba America Electronic Components 2SK1930(Q)

    Trans MOSFET N-CH Si 1KV 4A 3-Pin(3+Tab) TO-220FL
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    Chip1Stop 2SK1930(Q) 220
    • 1 -
    • 10 $12.8
    • 100 $10.5
    • 1000 $10.5
    • 10000 $10.5
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    2SK193 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK193 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK193 NEC Small Signal FET(Junction type) FM tuner Original PDF
    2SK193 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK193 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK193 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK193 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK193 Unknown FET Data Book Scan PDF
    2SK1930 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1930 Toshiba N-Channel MOSFET Original PDF
    2SK1930 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1930 Toshiba Original PDF
    2SK1930 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK1930 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan PDF
    2SK1930(2-10S1B) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Original PDF
    2SK1930(2-10S2B) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power Original PDF
    2SK1930TE24L Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original PDF
    2SK1930(TE24L,Q) Toshiba 2SK1930 - MOSFET N-CH 1000V 4A TO-220 Original PDF
    2SK1930TE24R Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original PDF
    2SK1930(TO-220FL) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power Original PDF
    2SK1930(TO-220SM) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Original PDF

    2SK193 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1936-01

    k1930

    Abstract: 2SK1930
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 k1930 2SK1930

    2SK1938

    Abstract: No abstract text available
    Text: 2SK1938-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 5.45 ±0.2 5.45 ±0.2 Switching regulators UPS DC-DC converters General purpose power amplifier ±0.3 3.2 +0.3 ±0.3


    Original     		PDF 2SK1938-01R 2SK1938

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK1933 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange


    Original     		PDF 2SK1933 D-85622 Hitachi DSA002749

    2SK1937-01

    Abstract: No abstract text available
    Text: 2SK1937-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		PDF 2SK1937-01 SC-65 2SK1937-01

    k1930

    Abstract: 2SK1930
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 k1930 2SK1930

    HX 830

    Abstract: 2SK1933 Hitachi DSA00398
    Text: 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source 2SK1933


    Original     		PDF 2SK1933 HX 830 2SK1933 Hitachi DSA00398

    2SK1931

    Abstract: No abstract text available
    Text: SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS F5E20 Case : E-pack (Unit : mm) 200V 5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters


    Original     		PDF 2SK1931 F5E20 2-24V 100ms 2SK1931

    2SK1931

    Abstract: No abstract text available
    Text: SHINDENGEN VR Series Power MOSFET 2SK1931 F5E20 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 200V 5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters


    Original     		PDF 2SK1931 F5E20 2-24V 100ms 2SK1931

    2SK1934

    Abstract: No abstract text available
    Text: 2SK1934 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SK1934 2SK1934

    2SK1937-01 equivalent

    Abstract: 2SK1937
    Text: 2SK1937-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,48Ω 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK1937-01 2SK1937-01 equivalent 2SK1937

    2SK1934

    Abstract: Hitachi DSA00395
    Text: 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain Flange 3. Source


    Original     		PDF 2SK1934 2SK1934 Hitachi DSA00395

    2SK1930

    Abstract: No abstract text available
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 2SK1930

    2SK1930

    Abstract: No abstract text available
    Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1930 2SK1930

    2SK1934

    Abstract: No abstract text available
    Text: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SK1934 2SK1934

    A2272

    Abstract: No abstract text available
    Text: 2SK1936-01 FUJI P O W E R M O S - F E T N CHANNEL SILICON POWER IVIOS-FET F A P -IIA SERIES • Features Outline Drawings • High speed switching • -ow on-resistance • Mo secondary breakdown • .ow driving power • High voltage • ycs= ± 30V Guarantee


    OCR Scan     		PDF 2SK1936-01 A2272

    2SK1939

    Abstract: 2SK1939-01 SC-65 T151 A2281
    Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee


    OCR Scan     		PDF 2SK1939-01 SC-65 2SK1939 2SK1939-01 SC-65 T151 A2281

    Untitled

    Abstract: No abstract text available
    Text: 2SK1934 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • L ow o n -resistance • H igh speed sw itching • No secondary breakdow n • Suitable for Sw itching regulator Outline 1. Gate 2. Drain Flange 3. Source 700


    OCR Scan     		PDF 2SK1934

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan     		PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    2SK1395

    Abstract: 2sk2006 2SK1539 2SK1685
    Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695


    OCR Scan     		PDF 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 2SK1391 2SK1392 2SK1395 2SK1539 2SK1685

    2SK1930

    Abstract: No abstract text available
    Text: T O S H IB A 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE


    OCR Scan     		PDF 2SK1930 to-22qfl 2SK1930

    2SK1933

    Abstract: K1933
    Text: 2SK1933 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching N o secondary breakdown Suitable for Switching regulator Outline ‘i TO- G o1. Gate 2. Drain Flange 3. Source


    OCR Scan     		PDF 2SK1933 2SK1933 K1933

    2SK1930

    Abstract: No abstract text available
    Text: 2SK1930 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK1930 O-22QFL 2SK1930

    2SK193

    Abstract: transistor 2sk193 2sK193 transistor
    Text: NEC N-CHANNEL JUNCTIO N FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ES C R IP T IO N 2SK193 T h e 2 S K 1 9 3 is designed fo r use in FM tu n e r o f a p o ta b le ra d io P A C K A G E D IM EN SIO N S receiver. in m illim ete rs FEA TU RES • H igh lyfslt


    OCR Scan     		PDF 2SK193 2SK193 transistor 2sk193 2sK193 transistor