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    2SK1195 Search Results

    2SK1195 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1195 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK1195 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1195 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1195 Unknown FET Data Book Scan PDF
    2SK1195 Shindengen Electric Silicon Power Mosfet Data Book 1990 Scan PDF

    2SK1195 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters


    Original
    PDF 2SK1195 F1E23 2-24V

    2SK1195

    Abstract: F1E23 10V 1.5A MOSFET N-channel POWER MOSFET N-Channel 230V
    Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters


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    PDF 2SK1195 F1E23 2-24V 2SK1195 F1E23 10V 1.5A MOSFET N-channel POWER MOSFET N-Channel 230V

    2SK1195

    Abstract: F1E23 POWER MOSFET N-Channel 230V
    Text: SHINDENGEN VR Series Power MOSFET 2SK1195 F1E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters


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    PDF 2SK1195 F1E23 2-24V 2SK1195 F1E23 POWER MOSFET N-Channel 230V

    2SK1672

    Abstract: 2SK1533 2sk2280 2SK228
    Text: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully


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    PDF 2SK1194 2SK1195 2SK1533 2SK1672 2SK1861 2SK1931 2SK2177 2SK2178 2SK2179 2SK2279 2sk2280 2SK228

    2SK1395

    Abstract: 2sk2006 2SK1539 2SK1685
    Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695


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    PDF 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 2SK1391 2SK1392 2SK1395 2SK1539 2SK1685

    Untitled

    Abstract: No abstract text available
    Text: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re


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    PDF 2SK1195 --10V, --67i2

    LT 672

    Abstract: yf7a 2SK1195 F1E23 L200
    Text: S M D M *> U -X yt^-MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • S S O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 2 3 0 V 1.5A ■ R A TIN G S A b s o lu te M axim u m R a tin g s m a ft IE -¥■ Sym bol Ite m S to r a g e T e m p e ra tu r e T stg


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    PDF 2SK1195 F1E23) LT 672 yf7a 2SK1195 F1E23 L200

    Untitled

    Abstract: No abstract text available
    Text: SMDÜSi* / ' - % / t 7 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE VtWi-h Æ O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 ) 230V 1.5A • Æ fê * R A TIN G S ■ A b s o lu te M a x im u m m Ite m H R a tin g s y- m & Sy m b ol fK7Hii)& ft m C o n d itio n s


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    PDF 2SK1195 --10V F1E23) I00VN

    Untitled

    Abstract: No abstract text available
    Text: J V J — M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A TIN G S A b s o lu te M axim um R a tin g s m Ite m s m -fS ym bot Jf* ^ m ii/ X m J y c . « R a tin g s m & U n it m -5 5 -1 5 0 T s tg


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    PDF 2SK1195

    2sk1197

    Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
    Text: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)


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    PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2501L NEC 2501L 2SK1158 2SK1159

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40


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    PDF 2SA1795 2SC4668 STO-220

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs VZ series STO-220 SMD Electrical Characteristics Absolute Maximum Ratings Type No. Pt DSS I . .i. y ] _ . . A ! 2SK2489 2SK2491 180 10 20 . V gss [W ] . 45 70 STO-220 (Lead type) Tch C ks Crss ton toff (max)


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    PDF STO-220 2SK2489 2SK2491 FTO-220 2SK1931 F05B23VR 2SK1194 2SK1195

    e5lc

    Abstract: E3SD
    Text: H S x 7 K 7 . S M D < 7 ) f t : * E I Diagram of the Surface Mounting Devices □n ^ T ype No. / < r7 — h - 7 > ' / Z . $ Application 2SA1795 • DC-DCZ1 > / < - 9 2SA1796 • ? 3 "J — Power T ra n sistor 2SC 4668 2SC 4669 • ï - ÿ K 7 -f 7 • n > 7 - K 7 ' f ?


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    PDF 2SA1795 2SA1796 2SK1194 2SK1195 2SK1672 2SK1533 e5lc E3SD

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


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    PDF 2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10


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    PDF 2SK1861 F05B23VR 2SK1195 STO-220 STO-220

    3SBA60

    Abstract: D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M
    Text: P a r t s N u m b e r Index Parts No. Page 2SA1598. . 36 2SA1599. . 36 2SA1600. . 36 2SA1601. . 36 2SA1679. . 36 2SA1795. . 21


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    PDF 2SC4585 2SC4663 2SC4664 2SC4668 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 3SBA60 D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]


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    PDF OT-89 2SK1861 2SK1195

    smd diode K7

    Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
    Text: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter


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    PDF 2SA1795 2SA1796 2SC4668 2SC4669 D1FL40 D2FL40 DE3L40 DE5LC40 D1FL20U D2FL20U smd diode K7 TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f