Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
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2SK1195
Abstract: F1E23 10V 1.5A MOSFET N-channel POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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Original
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2SK1195
F1E23
2-24V
2SK1195
F1E23
10V 1.5A MOSFET N-channel
POWER MOSFET N-Channel 230V
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PDF
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2SK1195
Abstract: F1E23 POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 F1E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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Original
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2SK1195
F1E23
2-24V
2SK1195
F1E23
POWER MOSFET N-Channel 230V
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PDF
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2SK1672
Abstract: 2SK1533 2sk2280 2SK228
Text: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully
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Original
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2SK1194
2SK1195
2SK1533
2SK1672
2SK1861
2SK1931
2SK2177
2SK2178
2SK2179
2SK2279
2sk2280
2SK228
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PDF
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2SK1395
Abstract: 2sk2006 2SK1539 2SK1685
Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695
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OCR Scan
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2SK1861
2SK1931
2SK1194
2SK1195
2SK1672
2SK1533
2SK2005
2SK2006
2SK1391
2SK1392
2SK1395
2SK1539
2SK1685
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PDF
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Untitled
Abstract: No abstract text available
Text: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re
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OCR Scan
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2SK1195
--10V,
--67i2
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PDF
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LT 672
Abstract: yf7a 2SK1195 F1E23 L200
Text: S M D M *> U -X yt^-MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • S S O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 2 3 0 V 1.5A ■ R A TIN G S A b s o lu te M axim u m R a tin g s m a ft IE -¥■ Sym bol Ite m S to r a g e T e m p e ra tu r e T stg
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OCR Scan
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2SK1195
F1E23)
LT 672
yf7a
2SK1195
F1E23
L200
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PDF
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Untitled
Abstract: No abstract text available
Text: SMDÜSi* / ' - % / t 7 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE VtWi-h Æ O U T L IN E D IM E N S IO N S 2SK1195 F 1 E 2 3 ) 230V 1.5A • Æ fê * R A TIN G S ■ A b s o lu te M a x im u m m Ite m H R a tin g s y- m & Sy m b ol fK7Hii)& ft m C o n d itio n s
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OCR Scan
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2SK1195
--10V
F1E23)
I00VN
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PDF
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Untitled
Abstract: No abstract text available
Text: J V J — M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A TIN G S A b s o lu te M axim um R a tin g s m Ite m s m -fS ym bot Jf* ^ m ii/ X m J y c . « R a tin g s m & U n it m -5 5 -1 5 0 T s tg
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OCR Scan
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2SK1195
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PDF
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2sk1197
Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Text: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)
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OCR Scan
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2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1172
2SK1173
50nstyp
2SK1194
2SK1195
2sk1197
2501L
NEC 2501L
2SK1158
2SK1159
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40
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OCR Scan
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2SA1795
2SC4668
STO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs VZ series STO-220 SMD Electrical Characteristics Absolute Maximum Ratings Type No. Pt DSS I . .i. y ] _ . . A ! 2SK2489 2SK2491 180 10 20 . V gss [W ] . 45 70 STO-220 (Lead type) Tch C ks Crss ton toff (max)
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OCR Scan
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STO-220
2SK2489
2SK2491
FTO-220
2SK1931
F05B23VR
2SK1194
2SK1195
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PDF
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e5lc
Abstract: E3SD
Text: H S x 7 K 7 . S M D < 7 ) f t : * E I Diagram of the Surface Mounting Devices □n ^ T ype No. / < r7 — h - 7 > ' / Z . $ Application 2SA1795 • DC-DCZ1 > / < - 9 2SA1796 • ? 3 "J — Power T ra n sistor 2SC 4668 2SC 4669 • ï - ÿ K 7 -f 7 • n > 7 - K 7 ' f ?
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OCR Scan
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2SA1795
2SA1796
2SK1194
2SK1195
2SK1672
2SK1533
e5lc
E3SD
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PDF
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4311 mosfet transistor
Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.
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OCR Scan
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2SC3164
VR61F1
MA1000
MA2000
4311 mosfet transistor
2SK2068
2sc 1027 transistor
4-071 transistor
2SK2067
S2VC
4102 transistor
s2ld
s4vb bridge rectifier
4072
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10
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OCR Scan
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2SK1861
F05B23VR
2SK1195
STO-220
STO-220
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PDF
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3SBA60
Abstract: D20VT80 TH3J10 TK3L10Z TH3L20 TH3L10 TH3L10 Z D20VT60 a2430 10SC4M
Text: P a r t s N u m b e r Index Parts No. Page 2SA1598. . 36 2SA1599. . 36 2SA1600. . 36 2SA1601. . 36 2SA1679. . 36 2SA1795. . 21
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OCR Scan
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2SC4585
2SC4663
2SC4664
2SC4668
2SK1392
2SK1393
2SK1394
2SK1395
2SK1396
3SBA60
D20VT80
TH3J10
TK3L10Z
TH3L20
TH3L10
TH3L10 Z
D20VT60
a2430
10SC4M
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]
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OCR Scan
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OT-89
2SK1861
2SK1195
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PDF
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smd diode K7
Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
Text: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter
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OCR Scan
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2SA1795
2SA1796
2SC4668
2SC4669
D1FL40
D2FL40
DE3L40
DE5LC40
D1FL20U
D2FL20U
smd diode K7
TRANSISTOR SMD wb
smd transistor 2f
smd diode 2F
S1WB S 40 68
SMD tr 2f
transistor 2F I
smd diode 2F 7A
rectifier s1wb
transistor SMD 2f
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PDF
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