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    2SJ308 Search Results

    2SJ308 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ308 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ308 Unknown Scan PDF
    2SJ308 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ308 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ308 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF

    2SJ308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ308

    Abstract: ITR00414 ITR00415 ITR00416 ITR00417
    Text: 注文コード No.N 4 3 1 8 2SJ308 三洋半導体ニューズ No. 4 3 1 8 61499 新 2SJ308 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ308 --100V --10V ITR00420 ITR00421 ITR00422 ITR00423 2SJ308 ITR00414 ITR00415 ITR00416 ITR00417

    2SJ308

    Abstract: AX-9095
    Text: Ordering number:EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ308]


    Original     		PDF EN4318 2SJ308 2SJ308] O-220ML 2SJ308 AX-9095

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original     		PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584

    TN6Q04

    Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
    Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use


    Original     		PDF O-220 O-220ML O-220FI O-220FI5H O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140

    Diode U160

    Abstract: 2SJ308
    Text: Ordering number : EN 4 3 1 8 2SJ308 No.4318 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute Maximum Ratings at Ta = 25°C


    OCR Scan     		PDF 2SJ308 Diode U160 2SJ308

    2SJ308

    Abstract: No abstract text available
    Text: 2SJ308 AP A d v a n c e d P e rfo rm a n ce Series 2063 V Ds s = 2 5 0 V P Channel Power M OSFET •£■»318 F e a tu re s ■Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating m ounting. b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ308 53093TH AX-9095 2SJ308

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


    OCR Scan     		PDF Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264

    SS 200 700

    Abstract: 2sj281
    Text: V q ss = 150V, N-channel Absolute maximum ratings at Ta = 25°C Type No. Package Vm m 2SK2260 PCP 150 VGSS •d Electrical characteristics at Ta = 2 5C h' m m m i2 0 1.2 3.5 VGS off min to max (V) 1.5 to 2.5 RoSftm) typ/maxat Vq s = 10V (û } 1.6/2.2 typ


    OCR Scan     		PDF 2SK2260 2SJ403 2SJ404 2SJ405 2SJ406 O-220ML 2SK2160 2SK2161 2SK2378 2SK2379 SS 200 700 2sj281

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SJ32C

    Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
    Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SK19 2SK1923 T0-220 2SK1924 2SK2043LS 2SK2044LS O-220FI 2SK2045LS 2SK19; 2SK1922 2SJ32C 2SK14 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161

    2sj403

    Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
    Text: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF chan12/0 2SK2010 2SK2011 2SK2012 2SK2108 2SK2058 2SK2058 O-220 T0-220ML H707b 2sj403 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430