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    2SJ195 Price and Stock

    Rochester Electronics LLC 2SJ195-TL-E

    PCH 4V DRIVE SERIES
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    onsemi 2SJ195-TL-E

    2SJ195 - P-Channel 4V Drive Series '
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    Rochester Electronics 2SJ195-TL-E 2,100 1
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    2SJ195 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2sj195 Sanyo Semiconductor P-channel MOS silicon FET, very high-speed switching application Original PDF
    2SJ195 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ195 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ195 Unknown FET Data Book Scan PDF
    2SJ195 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ195 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ1950 Hitachi Semiconductor Power Transistors Data Book Scan PDF

    2SJ195 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ195

    Abstract: EN3768 37684
    Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195 EN3768 37684

    2SJ195

    Abstract: No abstract text available
    Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ195] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195

    2SJ195

    Abstract: ITR00076 ITR00077
    Text: 注文コード No.N 3 7 6 8 A 2SJ195 No. 3 7 6 8 A 51899 半導体ニューズ No.3768 とさしかえてください。 2SJ195 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ195 20V50V --10V ITR00080 ITR00082 ITR00083 ITR00084 2SJ195 ITR00076 ITR00077

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    2SJ195

    Abstract: No abstract text available
    Text: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage


    OCR Scan     		PDF 2SJ195 2083a 42693TH 2SJ195

    Untitled

    Abstract: No abstract text available
    Text: 2SJ195 2083A 2092A LD L o w D rive Series VDs s = 1 0 0 V P Channel Power MOSFET 3768 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage


    OCR Scan     		PDF 2SJ195 42693TH

    2092A

    Abstract: 2SJ195
    Text: Ordering number: EN3768A _ 2SJ195 N0.3768A P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		PDF EN3768A 2SJ195 -100V 2092A

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SJ18

    Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
    Text: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS


    OCR Scan     		PDF 2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S 2S1189 2S119 2sj196 mos-mcs

    2SJ270

    Abstract: 2SJ26
    Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0


    OCR Scan     		PDF 2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26

    K1412

    Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
    Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP


    OCR Scan     		PDF 17G7ti 2SK1467 2SK14691 2SK1470 --2SK1471 2SK1472 2SK1473 2SK1474 2SK1475 1800m K1412 K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


    OCR Scan     		PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    2SJ468

    Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
    Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8


    OCR Scan     		PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336