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    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


    OCR Scan     		PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave

    2Sc945 equivalent

    Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
    Text: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560


    OCR Scan     		PDF 2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent

    2SD596

    Abstract: 2S8624 2S0806
    Text: 2SD596.2SD596R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2S8624, 2SB624R PACKAGE DIMENSIONS • High DC Current Gain: h FE - 200 TYP. <VCE-1 .0 V , l c - 100mA in m illim a ttrt inches) ¿5 g) (0.098) 0.5 '% îl (0 02)


    OCR Scan     		PDF 2SD596 2SD596R 2S8624, 2SB624R 100mA) 2S8624 2S0806