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    Samtec Inc T2SD-20-24-L-03.00-S

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    Samtec Inc S2SD-20-24-L-08.02-SR

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    Samtec Inc T2SD-20-24C-L-12.00-S

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    Samtec Inc S2SD-20-24C-L-06.00-SR

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    Samtec Inc T2SD-20-24-F-10.00-T-NUS

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    2SD202 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD202 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD202 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD202 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD202 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD202 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD202 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD202 Unknown Cross Reference Datasheet Scan PDF
    2SD202 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD202 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD202 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD202 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD202 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD202 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2020 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2020 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2020 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2021 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2021 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2021 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2022 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN2803

    Abstract: No abstract text available
    Text: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.


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    PDF EN2803 2SD2028 2SD2028applied 2018B 2SD2028] EN2803

    ZENER DIODE 5v CAPACITY

    Abstract: SMD ZENER DIODE smd zener diode 5v SOT-23 smd zener diode 6v zener 6v diode smd zener diode 5v smd zener smd diode br "Zener Diode" Diode LT 450
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2028 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacity. 0.55 With Zener diode 11±3V between collector and base. 2 +0.1 0.95-0.1


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    PDF 2SD2028 OT-23 100mA ZENER DIODE 5v CAPACITY SMD ZENER DIODE smd zener diode 5v SOT-23 smd zener diode 6v zener 6v diode smd zener diode 5v smd zener smd diode br "Zener Diode" Diode LT 450

    2SB1347

    Abstract: 2SD2029
    Text: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier


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    PDF 2SB1347 2SD2029 -160V; -20mA 2SB1347 2SD2029

    2SB1346

    Abstract: 2SD2027
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2027 APPLICATIONS


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    PDF 2SB1346 2SD2027 2SB1346 2SD2027

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V


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    PDF 2SB1347 2SD2029

    EN2803

    Abstract: 2SD2028
    Text: Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions • With Zener diode 11±3V between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage.


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    PDF EN2803 2SD2028 2SD2028applied 2018B 2SD2028] EN2803 2SD2028

    2SD2024

    Abstract: TO-220c NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD2024 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications


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    PDF 2SD2024 O-220C 2SD2024 TO-220c NPN POWER DARLINGTON TRANSISTORS

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


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    PDF 2SD2029 2SB1347 2SB1347 2SD2029

    D403

    Abstract: 2SD2025 D-403 94L-969-D403 94L-374-B403
    Text: Transistors 2SB1344 2SD2025 94L-374-B403 (94L-969-D403) 299


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    PDF 2SB1344 2SD2025 94L-374-B403) 94L-969-D403) D403 2SD2025 D-403 94L-969-D403 94L-374-B403

    Untitled

    Abstract: No abstract text available
    Text: 2SD2027 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2


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    PDF 2SD2027

    2SB1344

    Abstract: 2SD2025
    Text: SavantIC Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and


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    PDF 2SB1344 O-220Fa 2SD2025 O-220Fa) -100V; 2SB1344 2SD2025

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V


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    PDF 2SD2029 2SB1347 2SB1347 2SD2029

    2SD2023

    Abstract: 2SB1033
    Text: SavantIC Semiconductor Product Specification 2SD2023 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters


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    PDF 2SD2023 O-220C 2SB1033 2SD2023 2SB1033

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160


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    PDF 2SB1347 2SD2029

    marking lt

    Abstract: 2SD2028 IC 2803
    Text: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage


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    PDF 2SD2028 2SD2028-applied marking lt IC 2803

    2SB1347

    Abstract: 2SD2029 SS 109
    Text: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)


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    PDF 2SB1347 2SD2029 G01b2Tb 2SB1347 2SD2029 SS 109

    toshiba 2sd425

    Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
    Text: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312


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    PDF 2SD287 2SD287C 2SD288 2SD289 2SD425 2SD425 2SD313 2SD313 2SD880 toshiba 2sd425 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD1391 2SD867

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor


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    PDF 7fl20c 2SD2023

    2SD2025

    Abstract: 2SB1344
    Text: $ /T ra n s is to rs h7 > y ^ 2SD2025 2SD2025 1.1? $ % y 7 Jls7° Is — NPN v h 7 > yZ ? ^ - U > h > r a Epitaxial Planar NPN Silicon Transistor (Darlington) l i S l ^ i l ' l i f f l / L o w Freq. Power Amp. • \ti£[li]/Dim ensions (U n it: mm) 2) ? > / ' * - ? ' - f i - K r t i S o


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    PDF 2SD2025 2SB1344 2SB1344. T0-220FP 2SD2025

    2SB1347

    Abstract: 2SD2029 20 A class b power transistors current gain
    Text: Power Transistors 2SD2029 2SD2029 Silicon Trip le -D iffu se d Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2 S B 1 3 4 7 U n it 1 m m 2 0 .5 m a x ._ j • F e a tu re s 5.3max. 3.0 4 • V ery g o o d lin earity of D C c u r re n t gain hFE


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    PDF 2SD2029 2SB1347 2SB1347 2SD2029 20 A class b power transistors current gain

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm


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    PDF 2SB1347 2SD2029 bT32fiS2 32flS5

    2SD2023

    Abstract: transistor adaa 2SB1033
    Text: h 7 > ÿ X ^ / T ransistors 2SD2023 2SD2023 H g lÉ I f c 7 ° U - ^ N P N v 'j3 > h 7 >V^^ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor x tiiH /D im e n s io n s Unit: mm 1) V ce (sat) VcE(sat)=0.3V (Typ.) le / I b =2A/0.2A 2) ¡s-2si^süiii$ hFE


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    PDF 2SD2023 2SB1033 to-220 100ms- 2SD2023 transistor adaa 2SB1033

    Untitled

    Abstract: No abstract text available
    Text: 2SD2023 /Transistors 2SD2023 '> • ; = ! > h 7 > y ^ ^ npn Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ^ ff^ & H /D im e n s io n s Unit: mm • 1) VCE (sat) 'o 4 . 5 + 0.2 VcE(sat)=0.3V (Typ.) Ic / I b =2A /0.2A 2) hFE tlX l ' 5 0


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    PDF 2SD2023 O-220

    D403 power transistor

    Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
    Text: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.


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    PDF 2SB1344 2SD2025 2SB1344 2SD2025. 300kQ 100ms O-220FP O-220 O-126 O-220, D403 power transistor D403 transistor TRANSISTOR D403 D403 A 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor