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    ROHM Semiconductor 2SD1781KT146R

    TRANS NPN 32V 0.8A SMT3
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    ROHM Semiconductor 2SD1781KT146Q

    TRANS NPN 32V 0.8A SMT3
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    ROHM Semiconductor 2SD1781KFRAT146R

    TRANS NPN 32V 0.8A SMT3
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    ROHM Semiconductor 2SD1781KT146-QR

    ROHM SEMICONDUCTOR TRANS GP BJT NPN 32V - Tape and Reel (Alt: 2SD1781KT146-QR)
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    ROHM Semiconductor 2SD1781K

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    Bristol Electronics 2SD1781K 3,000
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    2SD1781K Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1781K Kexin Medium Power Transistor Original PDF
    2SD1781K ROHM Medium Power Transistor (32V, 0.8A) Original PDF
    2SD1781K TY Semiconductor Medium Power Transistor - SOT-23 Original PDF
    2SD1781K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1781K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1781K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SD1781K ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1781KR ROHM Medium Power Transistor (32V, 0.8A) Original PDF
    2SD1781KT146Q ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
    2SD1781KT146Q ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF
    2SD1781KT146R ROHM TRANS NPN 32V 0.8A SOT-346 Original PDF
    2SD1781KT146R ROHM Medium Power Transistor (32 V, 0.8 A) Original PDF

    2SD1781K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking af

    Abstract: 2SD1781K
    Text: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1


    Original     		PDF 2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz smd transistor marking af 2SD1781K

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


    Original     		PDF 2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23

    100MHZ

    Abstract: 2SB1197K 2SD1781K VCBO-40V
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


    Original     		PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor


    Original     		PDF 2SB1197K 2SD1781K. 96-134-B92)

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SD1781K 500mA 2SB1197K. 96-220-D92)

    marking AFR

    Abstract: No abstract text available
    Text: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SD1781K OT-23-3L OT-23-3L 100mA 500mA 100MHz marking AFR

    2SD1781KGP

    Abstract: transistor D9C
    Text: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)


    Original     		PDF 2SD1781KGP OT-23 -55OC 2SD1781KGP transistor D9C

    100MHZ

    Abstract: 2SB1197K 2SD1781K
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


    Original     		PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K

    2SD1781K

    Abstract: afr 05 transistor afr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD1781K SOT-23-3L TRANSISTOR NPN FEATURES z Low voltage z High saturation current capability 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD1781K OT-23-3L 100mA 500mA 100MHz 2SD1781K afr 05 transistor afr

    marking 25 SC-59

    Abstract: 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390
    Text: 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3. C ollector ƔFEATURES . Low V 2. B as e CE sat . VCE(sat) ” 0.5V (IC / IB = - 0.5A / - 50mA) . I = - 0.8A. . Complements the 2SD1781K.


    Original     		PDF 2SB1197K 2SD1781K. SC-59 SC-59, MIL-STD-202, 100mA 100MHz 01-Jun-2002 marking 25 SC-59 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390

    2SB1197K

    Abstract: 2SD1781K T146
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


    Original     		PDF 2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146

    NPN Transistor 8A

    Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


    Original     		PDF 2SD1781K 500mA 2SB1197K. 96-220-D92) NPN Transistor 8A Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor

    transistor afr

    Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
    Text: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À0. 05 2. 92¡ À0. 05 200 0. 95¡ À0. 025 PCM: Collector-base voltage


    Original     		PDF 2SD1781K OT-23-3L 100mA 500mA, 100MHz transistor afr AFR marking 2SD1781K afr 05 transistor afr 60

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781KFRA 2SD1781K Transistors Medium Power Transistor 32V, 0.8A AEC-Q101 Qualified 2SD1781K 2SD1781KFRA zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package.


    Original     		PDF 2SD1781KFRA 2SD1781K AEC-Q101 2SB1197K. 2SB1197K SC-59

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1


    Original     		PDF 2SD1781K OT-23 500mA 500mA/50mA 100mA -50mA, 100MHz

    2SD1781K

    Abstract: transistor afr Transistor marking 0.5
    Text: 2SD1781K SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY TRANSISTOR * Feature: NPN EPITAXIAL SILICON TRANSISTOR Shandong Yiguang Electronic Joint stock Co., Ltd Package:SOT-23 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) (2) High current capacity in compact package


    Original     		PDF 2SD1781K OT-23 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K transistor afr Transistor marking 0.5

    transistor D9C

    Abstract: transistor marking D9c D9C transistor 2SD1781KP 2SD1781KPT marking D9C
    Text: CHENMKO ENTERPRISE CO.,LTD 2SD1781KPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)


    Original     		PDF 2SD1781KPT OT-23 -55OC transistor D9C transistor marking D9c D9C transistor 2SD1781KP 2SD1781KPT marking D9C

    Q2SD1781k

    Abstract: 7356 transistor BF 236 2SD1781K 2sd1781 4343 BF2369
    Text: SPICE PARAMETER 2SD1781K by ROHM TR Div. * 2SD1781K NPN BJT model * Date: 2006/12/15 .MODEL 2SD1781K NPN + IS=180.00E-15 + BF=236.95 + VAF=100 + IKF=2.7356 + ISE=180.00E-15 + NE=1.5578 + BR=18.769 + VAR=100 + IKR=.39611 + ISC=287.24E-15 + NC=4.0956 + NK=.91226


    Original     		PDF 2SD1781K Q2SD1781K 00E-15 24E-15 6532E-3 90E-12 787E-12 64E-12 7356 transistor BF 236 2SD1781K 2sd1781 4343 BF2369

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t


    OCR Scan     		PDF 2SD1781K 2SB1147K. SC-59 2sb1147

    2sb1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct


    OCR Scan     		PDF 2SD1781K 2SB1147K. SC-59 2sb1147

    2SB1147

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct


    OCR Scan     		PDF 2SD1781K 2SB1147K. SC-59 2SB1147

    2SD1796

    Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
    Text: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800


    OCR Scan     		PDF 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1796 SC-67 2SD1797 2SD1796 SC64 2SB1204 2SD1802 2SD1808A

    2SD1781K

    Abstract: No abstract text available
    Text: h 7 > v ^ ^ / T ransistors O C A \ 4 I O ! / 2SD1781K 7 0 4 ! l O I f l I V N P N > U = l > h 7 > V ^ ^ Epitaxial Planar Super M ini-M old N P N Silicon Transistor /Medium Power Amp. • * W f i^ ilH / D ir n e n s io n s Unit : mm « f t D V c E I . a . l A ^ l C - t e t 'o


    OCR Scan     		PDF 2SD1781K 2SD1781K

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor -32V, - 0.8A 2 S B 1 1 9 7 K •Features 1 ) LOW V cE(sat) (Ic / I b 2) •External dimensions (Units: mm) V cE(sal). 21. 99±± 0.0.22 j — 0.5V = - 0 .5 A /- 5 0 m A ) 1 Ic = -0 .8 A . 3) Complements the 2SD1781K.


    OCR Scan     		PDF 2SD1781K. SC-59