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    Amphenol Sine Systems AT06-2S-D1224V

    CONN PLUG HSG 2POS
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    DigiKey AT06-2S-D1224V Bulk 158 1
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    Interstate Connecting Components AT06-2S-D1224V 154
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    Amphenol Sine Systems AT06-2S-D1224VR

    CONN PLUG HSG 2POS
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    DigiKey AT06-2S-D1224VR Box 143 1
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    Interstate Connecting Components AT06-2S-D1224VR 3
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    Waytek, Inc. AT06-2S-D1224VR 985 1
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    Toshiba America Electronic Components 2SD1223(TE16L1,NQ)

    TRANS NPN DARL 80V 4A PW-MOLD
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    Mouser Electronics 2SD1223(TE16L1,NQ) 7,834
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    Samtec Inc S2SD-12-26-L-04.00-S

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    DigiKey S2SD-12-26-L-04.00-S Bulk 1
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    Avnet Americas S2SD-12-26-L-04.00-S Bulk 1
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    Master Electronics S2SD-12-26-L-04.00-S
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    Samtec Inc S2SD-12-24-L-20.00-S

    2.00 MM TIGER EYE DOUBLE ROW DIS
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    Mouser Electronics S2SD-12-24-L-20.00-S
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    Master Electronics S2SD-12-24-L-20.00-S
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    2SD122 Datasheets (130)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD122 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD122 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD122 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD122 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD122 Unknown Vintage Transistor Datasheets Scan PDF
    2SD122 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD122 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD122 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD122 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD122 Unknown Cross Reference Datasheet Scan PDF
    2SD1220 Kexin Silicon NPN Epitaxial Transistor Original PDF
    2SD1220 Toshiba NPN Transistor Original PDF
    2SD1220 TY Semiconductor Silicon NPN Epitaxial Transistor - TO-252 Original PDF
    2SD1220 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1220 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1220 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1220 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1220 Unknown Cross Reference Datasheet Scan PDF
    2SD1220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    ...

    2SD122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15


    Original     		PDF 2SD1220 O-252 D1220

    D1223

    Abstract: 2SD1223 a4503 2SB908
    Text: 2SD1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908 20070701-JA D1223 2SD1223 a4503 2SB908

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 B906 2SB906 2SD1221

    d1222

    Abstract: 2sd1222 equivalent 2sD1222 2SB907
    Text: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)


    Original     		PDF 2SD1222 2SB907. 15transportation d1222 2sd1222 equivalent 2sD1222 2SB907

    transistor B906

    Abstract: 2SB906 7B1A B-906 B906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。


    Original     		PDF 2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221

    transistor B906

    Abstract: B906 2SB906 2SD1221 B-906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906

    D1223

    Abstract: 2SB908 2SD1223
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. D1223 2SB908 2SD1223

    D1220

    Abstract: 2sd1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 D1220 2sd1220 2SB905

    D1224

    Abstract: 2SD1224
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


    Original     		PDF 2SD1224 D1224 2SD1224

    Untitled

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908.

    D1220

    Abstract: 2sd1220 2SB905
    Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage


    Original     		PDF 2SD1220 2SB905 D1220 2sd1220 2SB905

    2SD1221

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1221 2SB906 2SD122

    B941

    Abstract: B 941 2SD1224
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage


    OCR Scan     		PDF 2SD1224 150mA) B941 B 941 2SD1224

    2SD1225M

    Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
    Text: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm


    OCR Scan     		PDF 2SD1225M 2SD1858 150mV 500mA) 2SB909M/2SB12371 2SB909M, 2SB1237. 2SD1225M/2SD1858 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221


    OCR Scan     		PDF 2SB906 68MAX. Tc-25 2SD1221 -50mA,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1221 2 S D 1 221 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY P O W ER AM PLIFIER A PPLICATIO N • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-> High Power Dissipation : P0 = 20 W


    OCR Scan     		PDF 2SD1221 2SB906

    2sd1220

    Abstract: 2SB905
    Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO


    OCR Scan     		PDF 2SD1220 2SB905 2sd1220

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W


    OCR Scan     		PDF 2SD1221 2SB906

    Untitled

    Abstract: No abstract text available
    Text: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)


    OCR Scan     		PDF 2SD1225M/2SD1858 2SD1225M 2SD1858 2SD1858 2SD1225M 500mA) 150mV 2SB909M, 2SB1237.

    2SD1224

    Abstract: No abstract text available
    Text: TO SH IBA TO SHIBA TRANSISTOR 2SD1224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 224 PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., 5.2 ±0.2 PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15


    OCR Scan     		PDF 2SD1224 95MAX. 2SD1224

    2SB905

    Abstract: 2SD1220
    Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage


    OCR Scan     		PDF 2SB905 2SD1220 2SB905 2SD1220

    2SD1224

    Abstract: C2804
    Text: TO SH IBA 2SD1224 TO SHIBA TRANSISTOR 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) PULSE M OTOR DRIVE, H A M M ER DRIVE APPLICATIONS U n it in mm (A) SWITCHING APPLICATIONS 6.8MAX., PO W ER A M PLIFIER APPLICATIONS 0.6 + 0.15 • High DC Current Gain


    OCR Scan     		PDF 2SD1224 95MAX. 2SD1224 C2804

    NPN EPTAXIAL PLANAR

    Abstract: s915 2SD1227M 2SB911M
    Text: ROHM CO LTD NOE D ooosam h 7 > y 7s £ / T ransistors IRHM 3 2SD1227M/2SD1862 7^-2 7-2. / 2SD1227EVI X fcf £ v T7^ 7 ° U ~ ^ NPN v U □ > h 7 > V X i ? Power Amp. Eptaxial Planar NPN Silicon Transistors ^ O V lO O Z 1 P c = 1 W t * t l'o 2) VCE sat |=160mV Typ. (at 1A)


    OCR Scan     		PDF 2SD1227EVI 160mV 2SB911M/2SB1240 2SD1227M/2SD1862 NPN EPTAXIAL PLANAR s915 2SD1227M 2SB911M