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    2SD114 Search Results

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    2SD114 Price and Stock

    Rochester Electronics LLC 2SD1145G

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SD1145G Bulk 89,616 1,402
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    Rochester Electronics LLC 2SD1145F

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SD1145F Bulk 23,068 1,402
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    Rochester Electronics LLC 2SD1145F-AE

    BIP NPN 5A 20V
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    DigiKey 2SD1145F-AE Bulk 15,000 1,402
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    Rochester Electronics LLC 2SD1145G-AE

    BIP NPN 5A 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD1145G-AE Bulk 5,000 1,402
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    Panasonic Electronic Components 2SD11490SL

    TRANS NPN 100V 0.02A MINI3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SD11490SL Reel 6,000
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    2SD114 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD114 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD114 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD114 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD114 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD114 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD114 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD114 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD114 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD114 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD114 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD114 Toshiba Silicon NPN Diffused Junction Transistor Scan PDF
    2SD114 Toshiba Japanese Transistor Data Book Scan PDF
    2SD1140 Toshiba NPN Transistor Original PDF
    2SD1140 Toshiba TRANS DARLINGTON NPN 30V 1.5A 3(2-5J1A) Original PDF
    2SD1140 Unknown Scan PDF
    2SD1140 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1140 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1140 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1140 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1140 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1148

    Abstract: 2SB863 equivalent 2sb863 hfe1
    Text: Inchange Semiconductor Product Specification 2SD1148 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SB863 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage


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    PDF 2SD1148 2SB863 2SD1148 2SB863 equivalent 2sb863 hfe1

    2SB863

    Abstract: 2sd1148
    Text: SavantIC Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage


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    PDF 2SB863 2SD1148 -140V; 2SB863 2sd1148

    2SB863

    Abstract: 2sb863 transistor 2SD1148 SC-65
    Text: 2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2SD1148 SC-65 2SB863 2SB863 2sb863 transistor 2SD1148 SC-65

    D1140

    Abstract: transistor D1140 2SD1140
    Text: 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    PDF 2SD1140 D1140 transistor D1140 2SD1140

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1149 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 • High forward current transfer ratio hFE


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    PDF 2002/95/EC) 2SD1149

    Hitachi DSA00164

    Abstract: 2SD1141K
    Text: 2SD1141 K Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD1141 O-220AB D-85622 Hitachi DSA00164 2SD1141K

    2SD1149

    Abstract: No abstract text available
    Text: Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 1.9±0.1 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage


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    PDF 2SD1149 2SD1149

    2SD1113

    Abstract: 2SD1141
    Text: 2SD1141 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 400 V ————————————————————–


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    PDF 2SD1141 O-220AB 2SD1113

    2SD1145

    Abstract: No abstract text available
    Text: Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, strobe DC-DC converters, motor drivers. unit:mm 2006B [2SD1145] 6.0 5.0


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    PDF EN784E 2SD1145 2006B 2SD1145] SC-51 2SD1145

    2sb863 transistor

    Abstract: 2sb863 2sd1148
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB863 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1148 APPLICATIONS ·Power amplifier applications


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    PDF 2SB863 -140V 2SD1148 -140V; 2sb863 transistor 2sb863 2sd1148

    2SB863

    Abstract: 2SB863 equivalent 2sd1148
    Text: Inchange Semiconductor Product Specification 2SB863 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage


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    PDF 2SB863 2SD1148 2SB863 2SB863 equivalent 2sd1148

    2SB863

    Abstract: 2SD1148
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL


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    PDF 2SB863 2SD1148 -140V, -50mA, 2SB863 2SD1148

    Untitled

    Abstract: No abstract text available
    Text: 2SD1140 TO SHIBA TO SHIBA TRANSISTOR 2 S D 1 140 SILICON NPN EPITAXIAL TYPE PCT PROCESS (D ARLING TO N) MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. Unit in mm SW ITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hjTE = 4000 (Min.)


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    PDF 2SD1140

    Untitled

    Abstract: No abstract text available
    Text: 2SD1141 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage


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    PDF 2SD1141 -220AB

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SD1141 K— Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current


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    PDF 2SD1141 O-220AB 2SD1141®

    2SD1140

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER -2SD1140 INDUSTRIAL APPLICATIONS M I C R O M O TO R DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 5.1 M A X . POWER AM PL I F I E R APPLICATIONS. FEATURES : . High DC Current Gain : hFE=l!,000( M i n •)


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    PDF -2SD1140 150mA) IC-10mA, 150mA 2SD1140 2SD1140

    2sd1148

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm .1S9MAX. . 0 3 ,2 ±0.2 FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25uC &45±Q2 RATING


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    PDF 2SD1148 2SB863. 2sd1148

    2SD1148

    Abstract: 2SB863 audio amplifier 70w
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1148 POWER AMPLIFIER APPLICATIONS. Unit in mm 15.9MAX. . 0 3.2±qg FEATURES: . Complementary to 2SB863. . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC RATING


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    PDF 2SD1148 2SB863. 2SD1148 2SB863 audio amplifier 70w

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


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    PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    Untitled

    Abstract: No abstract text available
    Text: 2SD1141 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 2 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (T a = 6 kQ (Typ) 450 Q (Typ) ¿ 3 25°C) Item Symbol Rating Unit Collector to base voltage


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    PDF 2SD1141 -220A 2SD1113

    gy-80

    Abstract: 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654
    Text: PANASONIC INDL/ELEK-CSEHI} 7BC D | □□□C]5D4 S f ï f ^ T 2SD1149 2SD1149 '> ij 3 > N P N N P N Epitaxial Planar T JU’/ U — i f i J i & i i i U f f l / A F Am plifier • 4$ Î S /F e a tu re s


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    PDF 2SD1149 gy-80 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654

    Untitled

    Abstract: No abstract text available
    Text: T oshiba oiscrete St. /o p to T 2SD1148 9097250 TOSHIBA DISCRETE/OPTO DE I ^ O T Y E S D i>6C 07873 0007073 DT-3B-J3 SILICO N NPN T R IP L E D IFFU S ED TYP E POWER AMPLIFIER APPLICATIONS. Unit in mm 1&9MAX. 0 3 .Z ± O iS FEATURES: r> . Complementary to 2SB863.


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    PDF 2SD1148 2SB863.

    2SD424 TOSHIBA

    Abstract: 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD424 2SD335 2SD650 2SD718
    Text: - 216 - s « T y p e No. a « Manuf. m h S AN YO JE *ï TOSHIBA 2SD 492 ^ h □ — ^ 2SD 493 ^ ï h a - 7 2 SD 718 2SD 494 ^ í h □ 2SD718 2SD 490 ^ h 2SD 499 ^ i h □ — "5 2SD1148 J Í h□ — ^ T ± 2S D 1 1 4 8 X 2 s $ S: s: M 2£ 0 ÏZ y -—


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    PDF 2SD492 2SD493 2SD494 2SD490 2SD499 2SD500 2SD519 2SD522 2SD523 2SD424 2SD424 TOSHIBA 2sd472 2SC1818 MG50G2CL3 2SD873 2sd4242 2SD335 2SD650 2SD718

    2SD1145

    Abstract: 784E
    Text: Ordering number: EN 784E 2SD1145 N0.784E i NPN Epitaxial Planar Silicon Transistor High-Current Driver Applications Applications . Relay drivers, hammer drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. Features • Low saturation voltage • Large current capacity and wide ASO


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    PDF 2SD1145 100ms, 784E