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    Panasonic Electronic Components 2SD08750RL

    TRANS NPN 80V 0.5A MINIP3-F1
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    2SD0875 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD0875 Panasonic Silicon NPN epitaxial planer type small signal transistor Original PDF
    2SD0875 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD0875 Panasonic NPN Transistor Original PDF
    2SD08750RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80VCEO .5A MINI PWR Original PDF
    2SD08750SL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80VCEO .5A MINI PWR Original PDF
    2SD0875GSL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80VCEO 500MA MINIP-3 Original PDF
    2SD0875XR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD0875XS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD0875 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD0875G

    Abstract: 2SB0767G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Features ue pl d in an c se ed lud


    Original     		2002/95/EC) 2SD0875G 2SB0767G 2SD0875G 2SB0767G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB0767G 2SD0875G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SD0875G 2SB0767G PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage


    Original     		2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC


    Original     		2002/95/EC) 2SD0875G 2SB0767G PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1


    Original     		2002/95/EC) 2SD0875 2SD875) 2SB0767 2SB767) PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1


    Original     		2SD0875 2SD875) 2SB0767 2SB767) 2SB0767 2SB767 2SD0875 2SD875 PDF

    2SB0767G

    Abstract: 2SD0875G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SD0875G 2SB0767G 2SB0767G 2SD0875G PDF

    2SB0767

    Abstract: 2SB767 2SD0875 2SD875
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) 2SB0767 2SB767 2SD0875 2SD875 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC


    Original     		2002/95/EC) 2SB0767G 2SD0875G PDF

    2SB0767G

    Abstract: 2SD0875G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO


    Original     		2002/95/EC) 2SB0767G 2SD0875G 2SB0767G 2SD0875G PDF

    2SB0767G

    Abstract: 2SD0875G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Features ue pl d in an c se ed lud


    Original     		2002/95/EC) 2SB0767G 2SD0875G 2SB0767G 2SD0875G PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc


    Original     		2002/95/EC) 2SB0767 2SB767) 2SD0875 2SD875) PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF