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    2SC493 Price and Stock

    Toshiba America Electronic Components 2SC4935-Y,Q(J

    TRANS NPN 50V 3A TO220NIS
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    Toshiba America Electronic Components 2SC4935-O(Q,J)

    Bipolar Transistor (BJT)
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    2SC493 Datasheets (74)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC493 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC493 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC493 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC493 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC493 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC493 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC493 Unknown Vintage Transistor Datasheets Scan PDF
    2SC493 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC493 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC493 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC493 Unknown Transistor Replacements Scan PDF
    2SC493 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC493 Unknown Cross Reference Datasheet Scan PDF
    2SC4930 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC4930 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4930 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4930 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4930 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SC4930 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    2SC4931 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF

    2SC493 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1869

    Abstract: 2SC4935
    Text: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃


    Original     		PDF 2SA1869 O-220F 2SC4935 2SA1869 2SC4935

    a1869 transistor

    Abstract: a1869 2SA1869
    Text: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1869 2SC4935 SC-67 2-10R1A a1869 transistor a1869 2SA1869

    c4935

    Abstract: 2SC4935 2SA1869 IC502
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4935 2SA1869 SC-67 c4935 2SC4935 IC502

    2SC4938

    Abstract: No abstract text available
    Text: 2SC4938 Transistors High-voltage Switching Transistor 400V, 5A 2SC4938 !External dimensions (Units : mm) !Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 2) Fast switching. (tf :Max.1µs at IC=4A) 3) Wide SOA. (safe operating area) 13.1 0.5Min. 1.3


    Original     		PDF 2SC4938 SC-83A 100ms. 2SC4938

    C4935

    Abstract: C4935 Y 2SC4935
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SC4935 2SA1869 SC-67 2-10R1A C4935 C4935 Y 2SC4935

    2SC4934D

    Abstract: 2SC4934E 2SC4046 2SC4934 Hitachi DSA00493
    Text: 2SC4934 Silicon NPN Epitaxial Application High voltage amplifier Outline Ordering Information hFE 2SC4934D 250 to 500 2SC4934E 400 to 800 2SC4934 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SC4934 2SC4934D 2SC4934E 2SC4934D 2SC4934E 2SC4046 2SC4934 Hitachi DSA00493

    Untitled

    Abstract: No abstract text available
    Text: 2SC4937 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SC4937

    Untitled

    Abstract: No abstract text available
    Text: 2SC4939E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SC4939E

    2SA1869

    Abstract: 2SC4935
    Text: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25


    Original     		PDF 2SA1869 O-220F 2SC4935 2SA1869 2SC4935

    2SC4931

    Abstract: ITR07797 ITR07798 ITR07799 ITR07800 ITR07801 ic marking 3052 kt 784
    Text: Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.


    Original     		PDF ENN5295A 2SC4931 S21e2 2SC4931] 2SC4931 ITR07797 ITR07798 ITR07799 ITR07800 ITR07801 ic marking 3052 kt 784

    2SC4935

    Abstract: No abstract text available
    Text: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage


    Original     		PDF 2SC4935 SC-67 2-10R1A 2SC4935

    a1273* transistor

    Abstract: a1273 transistor A1273
    Text: Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.


    Original     		PDF ENN5295A 2SC4931 2SC4931] a1273* transistor a1273 transistor A1273

    Untitled

    Abstract: No abstract text available
    Text: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1869 2SC4935. SC-67 2-10R1A --10mA,

    2SC4938

    Abstract: transistor z3
    Text: 2SC4938 Transistor, NPN Features Dimensions Units: mm • available in P S D package • high-speed switching, tf < 1.0 (is for lc = 4 A • low collector saturation voltage, typically, V CE(sat)< 1.0 V fo r Ic/IB = 5 A /1 A • wide safe operating area (SOA)


    OCR Scan     		PDF 2SC4938 2SC4938 transistor z3

    2SA1869

    Abstract: 2SC4935
    Text: TOSHIBA 2SC4935 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC493 5 Unit in mm P O W E R A M P L IF IE R A PPLIC A TIO N S • • 10 ±0.3 Good Linearity of kpg. Complementary to 2SA1869 and 5 Watts Output Applications. ^3.2 ± 0.2


    OCR Scan     		PDF 2SC4935 2SA1869 SC-67 961001EAA2' 2SC4935

    2sc4934

    Abstract: 126FM 2SC4934E
    Text: HITACHI 2SC4934 Silicon NPN Epitaxial Application T O -126F M High voltage amplifier I ill Ordering Information 1. '3 hFE 2SC4934D 250 to 500 2SC4934E 400 to 800 I Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage V CBO


    OCR Scan     		PDF 2SC4934 -126F 2SC4934D 2SC4934E 2SC4934E 2SC4046. 2sc4934 126FM

    TF286

    Abstract: 2SC4938 C4938
    Text: / K 2SC4938 Transistors 2S C 4938 E M m cf Is - i-M NPN V y □ > h y > v * $ Triple Diffused Planar NPN Silicon Transistor. ¡S&DC-DC □ > / < - * « Switching Regulator, High Speed DC-DC Converter • W f é 't f jilS I/Dimensions Unit : mm t f< 1 .0 M S ,


    OCR Scan     		PDF 2SC4938 TF286 2SC4938 C4938

    2SA1869

    Abstract: 2SC4935
    Text: TOSHIBA 2SA1869 2 S A 1 869 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Good Linearity of hEE Complementary to 2SC4935 r <v> o 1.1 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1869 2SC4935 SC-67 2-10R1A 2SA1869 2SC4935

    transistor C5001

    Abstract: C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W
    Text: 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically, tf < 0.3 |xs for lc = 6A • low collector saturation voltage, typically VcE sat ^0-3 Vfor lc/lB = 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter


    OCR Scan     		PDF 2SC4939 2SC5001F5 transistor C5001 C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W

    2SA1869

    Abstract: 2SC4935
    Text: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg


    OCR Scan     		PDF 2SA1869 2SC4935 SC-67 2SA1869 2SC4935

    Untitled

    Abstract: No abstract text available
    Text: 2SC4938 Transistor, NPN Features Dimensions Units : mm • available in PSD package • high-speed switching, tf < 1.0 ¿is for lc = 4 A 2SC4938 (PSD) XI • low collector saturation voltage, typically, VCE(sat)< 1.0 V for lc /lB - 5 A/1 A • wide safe operating area (SOA)


    OCR Scan     		PDF 2SC4938 2SC4938

    Untitled

    Abstract: No abstract text available
    Text: 2SC4937 / T ransistors 2SC4937 H l& t f r 71/ - * NPN y 'J □ > S 7 > V * $ Triple Diffused Planar NPN Silicon Transistor • ¡I & D C - D C U > / \ '- £ J fl Switching Regulator, High Speed DC-DC Converter 1 ii-JK '^ iiS /D im e n sio n s U n it: mm


    OCR Scan     		PDF 2SC4937 250ft Pw--50/iS

    2SA1869

    Abstract: 2SC4935
    Text: 2SA1869 T O S H IB A 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 1.2±0.2 10 ±0.3 Good Linearity of hjrg Complementary to 2SC4935 2.7±0.2 1.1 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1869 2SC4935 2SA1869 2SC4935

    Untitled

    Abstract: No abstract text available
    Text: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1869 2SC4935