2SA1735
Abstract: 2SC4540
Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)
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2SC4540
2SA1735
SC-62
20070701-JA
2SA1735
2SC4540
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25
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2SA1735
-500mA)
2SC4540
-500mA
-25mA
-100mA
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)
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2SC4540
2SA1735
2SA1735
2SC4540
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smd marking KC
Abstract: smd diode marking KC 2SC4540 2SA1735 marking KC smd marking TF
Text: Transistors SMD Type Power Switching Applications 2SC4540 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1735
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2SC4540
500mA)
2SA1735
100mA
700mA
500mA
smd marking KC
smd diode marking KC
2SC4540
2SA1735
marking KC
smd marking TF
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)
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2SC4540
2SA1735
2SA1735
2SC4540
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)
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2SC4540
2SA1735
SC-62
2SA1735
2SC4540
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) · High speed switching time: tstg = 0.4 µs (typ.)
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2SC4540
2SA1735
2SA1735
2SC4540
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2SA1735
Abstract: marking LC 2SC4540
Text: Transistors SMD Type Power Switching Applications 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540
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2SA1735
-500mA)
2SC4540
-10mA
-100mA
-700mA
-500mA
-25mA
2SA1735
marking LC
2SC4540
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)
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2SC4540
2SA1735
2SA1735
2SC4540
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Untitled
Abstract: No abstract text available
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)
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2SC4540
2SA1735
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2SA1735
Abstract: 2SC4540
Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)
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2SC4540
2SA1735
2SA1735
2SC4540
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2SA1735
Abstract: 2SC4540
Text: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)
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2SA1735
2SC4540
2SA1735
2SC4540
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2SA1735
Abstract: 2SC4540
Text: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)
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2SA1735
2SC4540
SC-62
2SA1735
2SC4540
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)
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2SC4540
500mA)
2SA1735
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2SA1735
Abstract: 2SC4540 005g
Text: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)
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2SC4540
500mA)
2SA1735
250mm2x0
2SA1735
2SC4540
005g
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2SA1735
Abstract: 2SC4540
Text: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)
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2SC4540
500mA)
2SA1735
250mm2
2SA1735
2SC4540
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4540 U nit 4.6 MAX. o POWER A MPLIFIER APPLICATIONS 1 6 MAX. 0.4 ± 0 .0 5 » POWER SWITCHING APPLICATIONS • Low S a t u r a t i o n V o l t a g e VCE s a t = 0 . 5 V ( M a x . ) ( I c =500mA) • H i g h S p e e d S w i t c h i n g T im e :
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2SC4540
500mA)
A1735
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2SA1735
Abstract: 2SC4540
Text: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)
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2SC4540
500mA)
2SA1735
250mm2
2SA1735
2SC4540
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Untitled
Abstract: No abstract text available
Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package
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2SA1735
-500mA)
2SC4540
-10mA,
-100mA
-700mA
-500mA,
-25mA
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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2SA1735
Abstract: 2SC4540
Text: TO SHIBA 2SA1735 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX — j- 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (Iq = —500mA)
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2SA1735
--500mA)
2SC4540
100mA
700mA
--500mA,
--25mA
2SA1735
2SC4540
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