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    2SC454 Search Results

    2SC454 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SC4549(0)-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SC4549-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SC454 Price and Stock

    Rochester Electronics LLC 2SC4548D-TD-E

    TRANSISTOR
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    DigiKey 2SC4548D-TD-E Bulk 194,000 1,665
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    Rochester Electronics LLC 2SC4548E-TD-E

    NPN SILICON TRANSISTOR
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    DigiKey 2SC4548E-TD-E Bulk 44,911 2,959
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    Sanken Electric Co Ltd 2SC4546

    TRANS NPN 400V 7A TO220F
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    Micro Commercial Components 2SC4548-E-TP

    TRANS NPN 400V 0.2A SOT89
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    Micro Commercial Components 2SC4548-D-TP

    TRANS NPN 400V 0.2A SOT89
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    2SC454 Datasheets (114)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC454 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC454 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC454 Micro Electronics Low Level and General Purpose Transistors Scan PDF
    2SC454 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC454 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC454 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC454 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC454 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC454 Unknown Vintage Transistor Datasheets Scan PDF
    2SC454 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC454 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC454 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC454 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC454 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC454 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC454 Unknown Cross Reference Datasheet Scan PDF
    2SC454 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC454 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2SC4540 Kexin Power Switching Applications Original PDF
    2SC4540 Toshiba NPN Transistor Original PDF

    2SC454 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4542

    Abstract: transistor 2SC4542
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.


    Original     		PDF 2SC4542 2SC4542 transistor 2SC4542

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)


    Original     		PDF 2SC4540 2SA1735 SC-62 20070701-JA 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1735 -500mA) 2SC4540 -500mA -25mA -100mA

    2SC4169

    Abstract: 2SC4547 37122
    Text: Ordering number:EN3712 NPN Planar Silicon Darlington Transistor 2SC4547 85V/3A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SC4169] Features


    Original     		PDF EN3712 2SC4547 2010C 2SC4169] 2SC4169 2SC4547 37122

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC4544 TRANSISTOR NPN TO-220 FEATURES 1. BASE High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin.


    Original     		PDF O-220 2SC4544 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z High Breakdown Voltage z Excellent hFE Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L 2SC4548 ELECTRI400

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC4544 TRANSISTOR NPN TO-220 FEATURES 1. BASE • High voltage: V (BR) CEO = 300 V 2. COLLECTOR • Small collector output capacitance: Cob=3.0pF (typ.) • Collector metal (fin) is fully covered with mold resin.


    Original     		PDF O-220 2SC4544 O-220

    2SC4543

    Abstract: No abstract text available
    Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 • Absolute Maximum Ratings +0.1 0.4±0.08 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 45° +0.25 0.4max. ● High transition frequency fT. Small collector output capacitance Cob.


    Original     		PDF 2SC4543 2SC4543

    2SC4546

    Abstract: FM20 vbe 12v, vce 600v NPN Transistor
    Text: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC4546 Pulse14) 10typ 55typ 400min 100max O220F) 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor

    2SC4545

    Abstract: No abstract text available
    Text: Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo


    Original     		PDF 2SC4545 2SC4545

    Untitled

    Abstract: No abstract text available
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736

    MARKING 1F

    Abstract: 2SC4543 transistor marking 1f 45MA160
    Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 • Absolute Maximum Ratings +0.1 0.4±0.08 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 45° +0.25 0.4max. ● High transition frequency fT. Small collector output capacitance Cob.


    Original     		PDF 2SC4543 MARKING 1F 2SC4543 transistor marking 1f 45MA160

    2SA1736

    Abstract: 2SC4541
    Text: 2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.)


    Original     		PDF 2SC4541 2SA1736 2SA1736 2SC4541

    2SA1735

    Abstract: 2SC4540
    Text: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)


    Original     		PDF 2SC4540 2SA1735 2SA1735 2SC4540

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4541 o POWER AMPLIFIER APPLICATIONS o POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VcE(sat)=-0.5V(Max.) (Ic=1.5A) • High Speed Switching Time: t stg=0.5MS (Typ.) • Small Flat Package • Pc=l~2W (Mounted on Ceramic Sabstrate)


    OCR Scan     		PDF 2SC4541 2SA1736 300ps,

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 3712 SA\YO 2SC4547 %No.3712 NPN Planar Silicon Darlington Transistor i 85V/3A Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures •High DC current gain.


    OCR Scan     		PDF 2SC4547 100il SC-46 5201MH,

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD SSE D • QQ0101B 3SQ « S A K J - “1 Silicon NPN Tripla Diffuseci Planar ☆High Voltage Switching Transistor 2SC4546 Application Example : e Outline Drawing 4 . . F M 2 0 Switching Regulator,Lighting Inverter,


    OCR Scan     		PDF QQ0101B 2SC4546 10Omax 10min

    hxj 2038

    Abstract: IC HXJ 2038 2SA17 2SC4548 3188 la 4548 RSN 3306 2SA1740 31883 ic 31883
    Text: Ordering number: EN 3188 _ 2SA1740/2SC4548 PN P E pitaxial P lan ar Silicon T ransistor N PN Triple Diffused P la n ar Silicon T ransistor High-Voltage Driver Applications F e a tu r e s • High breakdow n voltage • Adoption of MBIT process •Excellent hpE lin earlity


    OCR Scan     		PDF 2SA1740/2SC4548 2SA1740 250mm2 hxj 2038 IC HXJ 2038 2SA17 2SC4548 3188 la 4548 RSN 3306 2SA1740 31883 ic 31883

    2SA1735

    Abstract: 2SC4540 005g
    Text: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735 250mm2x0 2SA1735 2SC4540 005g

    2SC4542

    Abstract: 2SA473Y 2SA473-Y
    Text: 2SC4542 o K fllM S x 4 x y n o a ? o a ? - 7 -u • • ììx ì ?*->mmth-fim Ä ttffT * ". : vCB0¿ 1500 V f t » * i £ ô H S t > . : VCB 1„ S S V ( Ic P = 7 A , IB- 1 . 7 a ) • X 4 : 1 1 - 0 1 5 * . ( « • * ) ( 1C P - 7 A . I B 1 ( « . 4 ) = 1 4 a )


    OCR Scan     		PDF 2SC4542 fH-64fcHi nL-285n 25CU73-Y 2SA473-Y 2SC4542 2SA473Y 2SA473-Y

    Untitled

    Abstract: No abstract text available
    Text: 2SC4544- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS H IG H V O L T A G E S W I T C H I N G A N D A M P L I F I E R A P P L I C A T I O N S . Unit in m m C O L O R TV H O R I Z O N T A L D R I V E R A P P L I C A T I O N S . C O L O R TV C H R O M A O U T P U T A P P L I C A T I O N S .


    OCR Scan     		PDF 2SC4544- 2SC4544

    2SA1735

    Abstract: 2SC4540
    Text: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)


    OCR Scan     		PDF 2SC4540 500mA) 2SA1735 250mm2 2SA1735 2SC4540

    2SC4548

    Abstract: No abstract text available
    Text: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity


    OCR Scan     		PDF 2SA1740 250mm2 2SA1740/2SC4548 -----12SA1740/2SC4548 250mm2XOi 2SC4548