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    2SD206 Search Results

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    2SD206 Price and Stock

    Panasonic Electronic Components 2SD20640S

    TRANS NPN 120V 6A TOP-3F
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    Panasonic Electronic Components 2SD20670RA

    TRANS NPN DARL 100V 2A MT-2
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    ROHM Semiconductor 2SD2061

    Trans GP BJT NPN 60V 7A 3-Pin (3+Tab) TO-220FP
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    Onlinecomponents.com 2SD2061 1,449
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    ComSIT USA 2SD2061 460
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    ROHM Semiconductor 2SD2061E

    POWER TRANSISTOR (60V, 3A) Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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    ComSIT USA 2SD2061E 10,500
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    2SD206 Datasheets (90)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD206 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD206 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD206 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD206 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD206 Unknown Cross Reference Datasheet Scan PDF
    2SD206 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD206 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD206 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD206 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD206 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD206 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD206 Shindengen Electric Semi Conductor Catalog Scan PDF
    2SD2060 Korea Electronics Transistors Scan PDF
    2SD2060 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2060 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2060 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2060 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2061 ROHM Power Transistor(120V, 7A) Original PDF
    2SD2061 Various Russian Datasheets Transistor Original PDF
    2SD2061 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SD206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2060

    Abstract: 2SB1368
    Text: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)


    Original     		PDF 2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368

    2SB1373

    Abstract: 2SD2066
    Text: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SB1373 2SD2066 -160V; -20mA 2SB1373 2SD2066

    2SD2061

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power


    Original     		PDF 2SD2061 O-220Fa O-220Fa) 2SD2061

    2SD2067

    Abstract: No abstract text available
    Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 For low-frequency output amplification (1.0) 0.65 max. ● ● ● ● ● Darlington connection. High foward current transfer ratio hFE.


    Original     		PDF 2SD2067 2SD2067

    2SD2067

    Abstract: No abstract text available
    Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.


    Original     		PDF 2SD2067 2SD2067

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.1 (0.8) • Darlington connection • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD2067

    2SD2066

    Abstract: 2SB1373
    Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● High breakdown voltage: VCEO = 160V min.


    Original     		PDF 2SD2066 2SB1373 2SD2066 2SB1373

    2SD2068

    Abstract: No abstract text available
    Text: 2SD2068S Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.16k h(FE) Max. Current gain.40k


    Original     		PDF 2SD2068S Freq150M 2SD2068

    2SD2061

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications


    Original     		PDF 2SD2061 O-220Fa O-220Fa) 2SD2061

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP


    Original     		PDF 2002/95/EC) 2SD2067

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP


    Original     		PDF 2002/95/EC) 2SD2067

    2SD2066

    Abstract: 2SB1373
    Text: SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SD2066 2SB1373 2SD2066 2SB1373

    2SD2061

    Abstract: 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD2061 O-220 2SD2061 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor

    2SD2061

    Abstract: 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220F 2SD2061 O-220F 2SD2061 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a

    2SB1371

    Abstract: 2SD2064
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS


    Original     		PDF 2SB1371 -120V 2SD2064 -120V; -20mA; 2SB1371 2SD2064

    2SD2067

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 0.7 ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SD2067 2SD2067

    2SB1372

    Abstract: 2SD2065
    Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage


    Original     		PDF 2SB1372 2SD2065 2SB1372 2SD2065

    2SD2060

    Abstract: 2SB1368
    Text: SavantIC Semiconductor Product Specification 2SD2060 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 )


    Original     		PDF 2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368

    2SB1371

    Abstract: 2SD2064
    Text: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING


    Original     		PDF 2SB1371 2SD2064 -20mA 2SB1371 2SD2064

    2SD2061

    Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061


    Original     		PDF 2SB1369 -180V -50mA) 2SD2061 -10mA; -50mA -200V; 2SD2061 2SB1369 transistor 2sd2061 IC vertical monitor

    2SB1373

    Abstract: 2SD2066 S1113
    Text: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2066 U n it: mm 4.7max. - • Features • V ery good linearity of DC c u rre n t gain 2.1» .¡.s■ tir r t Iife


    OCR Scan     		PDF 2SB1373 2SD2066 Q01b31Q 2SB1373 2SD2066 S1113

    2SD2061

    Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061
    Text: h 7 > '/ 7 ^ /Transistors 2SD2061 2 S D 2 0 6 1 h* îè§î :7<>U/”^ npn ^7>v7^ Freq. Power Am p. Triple Diffused Planar N P N S ilicon Transistor ^ JB ^ tiiiil/D im en sio n s Unit: mm 1) V c e (sat) VCE(sat)=0.3V (Typ.) Ic / I b = 2 A /0 .2 A 2) S M â t « » « h FE


    OCR Scan     		PDF 2SD2061 2SB1187 A/02A 2SD2061 2SB1187 2SB1187 transistor transistor 2sd2061

    transistor D304

    Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
    Text: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.


    OCR Scan     		PDF 2SD1957 2SD2061 2SD1957 T0220FP 100ms 94L-1016-D304) transistor D304 D304 TRANSISTOR 2sd2061 D304 diode d304

    251C

    Abstract: 2SB1372 2SD2065
    Text: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.


    OCR Scan     		PDF QD11354 2SD2065 2SD2065 2SB1372 1135b 00x2iâ 251C 2SB1372