2SA1276
Abstract: 2SC3230 general semiconductor transistors
Text: SavantIC Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3230 ·Good linearity of hFE APPLICATIONS ·General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SA1276
O-220
2SC3230
O-220)
2SA1276
2SC3230
general semiconductor transistors
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2SA1276
Abstract: 2SC3230 1.7MHz cordless telephone
Text: Inchange Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system
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2SC3230
O-220
2SA1276
2SA1276
2SC3230
1.7MHz cordless telephone
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2SA1276
Abstract: 2SC3230
Text: Inchange Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3230 ·Good linearity of hFE APPLICATIONS ·General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SA1276
O-220
2SC3230
O-220)
2SA1276
2SC3230
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2SC3230
Abstract: 2SA1276
Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC3230 APPLICATIO N S • Pow er A m plifier A pplications Car Radio, C a r S t e r e o O utput S ta g e Am plifier I •j Applications. FEA TU R ES • C om plem entary to ) 2 S A 1276 5 W atts O utput A p p lic a tio n s .
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OCR Scan
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2SC3230
2SA1276
2SC3230
2SA1276
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2SA1276
Abstract: 2SC3230
Text: JMnic Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3230 ・Good linearity of hFE APPLICATIONS ・General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SA1276
O-220
2SC3230
O-220)
2SA1276
2SC3230
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2SC3230
Abstract: 2SA1276
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3230 APPLICATIONS ·Designed for general purpose applications.
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2SA1276
2SC3230
2SC3230
2SA1276
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2SC3230
Abstract: 2SA1276
Text: SavantIC Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system
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2SC3230
O-220
2SA1276
2SC3230
2SA1276
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2sc3205
Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Text: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)
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Ta-250O
2SC3880S
OT-23
2SC3195
2SC3194
KTC9016
KTC9018
O-220A
KTC31I2
10-92I
2sc3205
2SC3207
KTC2075
2SC3228
2SA1273
kta949
2SC3192
C4369
2SC3226
2Ns551
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2sc3205
Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Text: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100
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OCR Scan
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Ta-250O
2SC3880S
OT-23
2SC3195
2SC3194
KTC9016
KTC9018
KTC2075
to-220a
KTC31I2
2sc3205
2SC3207
2SC3228
2SA1273
2SC3194
2sc3226
C4369
kta949
2sc3192
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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STRS6307
Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173
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2N3054
2N32741
2N4240
2N4908
2N3054A
2N3766
2N4273
2N4909
2N3055
2N3767
STRS6307
STR5412
2N3055 TO-220
S2000A3
STRS6309
S2000a2
BDW36
2SC3883
strs6308
STR6020
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Untitled
Abstract: No abstract text available
Text: , U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1276 Silicon PNP Power Transistor DESCRIPTION PIN 1.BASE • Collector-Emitter Breakdown Voltage 2.COLLECTOR : V(BR)CEo= -SOV(Min) • Good Linearity of hFE
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2SA1276
O-220C
2SC3230
-10mA;
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2SC3207
Abstract: 2sc3205 KTC2075 2SC3228 2SC3226 2SC3229 2SA1273 KTC2230A Y kta949 2SC3194
Text: Electrical Characteristics T a - 2 5 0O (m W V CEO N PN F M /R F. M IX O SC PN P (T Y P ) M IN (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 MAX NF Ic (mA) V CE •e f (dB) (V) (mA) (M H z ) I 5.0 6 - 1 50 TO-92(M) F5 100 50 TO-92(C) F3
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OCR Scan
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OT-23
OT-23
rO-220AB
KTC31I2
10-92I
KTD1582
2SC3226
rO-921.
2SC4377
2SC3207
2sc3205
KTC2075
2SC3228
2SC3229
2SA1273
KTC2230A Y
kta949
2SC3194
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2N4401
2N5401
2N5551
2SA1004
2SA1010
2SA1013
2SA1015
2SA1016
2SA1017
2SA1019
2SC3133 cross reference
Hitachi 2sc281
NEC D882
A564A
D1163A
2sC1815 cross reference
a628a
krc1211
KRA2203
NEC D288
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