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    2SC3076 Search Results

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    2SC3076 Price and Stock

    Toshiba America Electronic Components 2SC3076Y

    2000 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC3076Y 15,540
    • 1 $1.95
    • 10 $1.95
    • 100 $1.95
    • 1000 $0.897
    • 10000 $0.819
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    2SC3076Y 560
    • 1 $3.12
    • 10 $3.12
    • 100 $3.12
    • 1000 $1.287
    • 10000 $1.287
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    Toshiba America Electronic Components 2SC3076-Y,L1XHV(0

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC3076-Y,L1XHV(0 1,112
    • 1 $1.925
    • 10 $1.925
    • 100 $1.925
    • 1000 $0.77
    • 10000 $0.6738
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    Toshiba America Electronic Components 2SC3076-Y(T6L1,NV)

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip One Stop 2SC3076-Y(T6L1,NV) Cut Tape 1,154
    • 1 -
    • 10 $0.173
    • 100 $0.157
    • 1000 $0.147
    • 10000 $0.147
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    2SC3076 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3076 Kexin Silicon NPN Epitaxial Original PDF
    2SC3076 Toshiba Silicon NPN Transistor Original PDF
    2SC3076 Toshiba NPN Transistor Original PDF
    2SC3076 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC3076 Unknown Scan PDF
    2SC3076 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3076 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3076 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3076 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3076 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3076 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3076 Unknown Cross Reference Datasheet Scan PDF
    2SC3076 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3076 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3076 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC3076 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC3076 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC3076(2-7B1A) Toshiba 2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3076(2-7B2A) Toshiba 2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3076(2-7J1A) Toshiba 2SC3076 - TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SC3076 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3076

    Abstract: 2SC3076
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original     		2SC3076 O-252 C3076 C3076 2SC3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SC3076 2SA1241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240


    Original     		2SC3076 Freq100M StyleTO-251 PDF

    transistor c3076

    Abstract: C3076 2SC3076 2SA1241
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SC3076 2SA1241 PDF

    C3076

    Abstract: 2SA1241 2SC3076
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SC3076 2SA1241 C3076 2SA1241 2SC3076 PDF

    c3076

    Abstract: 2SA1241 2SC3076 transistor c3076
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SC3076 2SA1241 c3076 2SA1241 2SC3076 transistor c3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC3076 Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		2SC3076 PDF

    C3076

    Abstract: 2SC3076 2SA1241
    Text: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original     		2SC3076 2SA1241 20070701-JA C3076 2SC3076 2SA1241 PDF

    transistor c3076

    Abstract: C3076 2SA1241 2SC3076
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SC3076 2SA1241 transistor c3076 C3076 2SA1241 2SC3076 PDF

    transistor c3076

    Abstract: C3076 2SA1241 2SC3076 024 marking code
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SC3076 2SA1241 transistor c3076 C3076 2SA1241 2SC3076 024 marking code PDF

    2SC3076

    Abstract: C3076 2SA1241
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SC3076 2SA1241 2SC3076 C3076 2SA1241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original     		2SC3076 2SA1241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SC3076 2SA1241 PDF

    2SA1241

    Abstract: 2SC3076 30J40
    Text: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		2SC3076 2SA1241 2SA1241 2SC3076 30J40 PDF

    2SC3076

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		2SC3076 2SA1241 2SC3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 Unit in mm POWER SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Ip = 1 A) Excellent Switching Time : tstg = 1.0


    OCR Scan     		2SC3076 2SA1241 PDF

    2SA1241

    Abstract: 2SC3076
    Text: T O S H IB A 2SC3076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Collector Saturation V oltage : V CE (sat) = 0.5 V (Max.) (IC = 1 A) E xcellen t Sw itching Tim e : tgtg = 1.0


    OCR Scan     		2SC3076 2SA1241 2SA1241 2SC3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = 0-5 V (Max.) (IC = 1 A) Excellent Switching Time : tgtg = 1.0 /¿s (Typ.)


    OCR Scan     		2SC3076 2SA1241 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1241 POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. S8M AX. o FEATURES : * . Low Collector Saturation Voltage : VcE sat =-0.5V (Max.) (Ic=-1A) 1 . Excellent Switching Time : tstg=1.0/is (Typ.) . Complementary to 2SC3076


    OCR Scan     		2SA1241 2SC3076 50X50XQ PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (Ic = lA) Excellent Switching Time : tgtg= 1.0/us (Typ.)


    OCR Scan     		2SC3076 2SA1241 B12-7B2A PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 Unit in mm POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) Excellent Switching Time : ^ ^ = 1.0^3 (Typ.)


    OCR Scan     		2SC3076 2SA1241 PDF

    2sc3076

    Abstract: V7040
    Text: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241


    OCR Scan     		2SC3076 2SA1241 2sc3076 V7040 PDF

    2SA1241

    Abstract: 2SC3076 30J40
    Text: TOSHIBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		2SC3076 2SA1241 2SA1241 2SC3076 30J40 PDF