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Panasonic Electronic Components 2SC25900Q TRANS NPN 120V 0.5A TO126B-A1
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2SC2590 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC2590	Panasonic	Silicon NPN Transistor	Original	PDF
2SC2590	Panasonic	NPN Transistor	Original	PDF
2SC2590	Panasonic	Silicon NPN epitaxial planar type	Original	PDF
2SC2590	Various Russian Datasheets	Transistor	Original	PDF
2SC2590	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC2590	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC2590	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC2590	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC2590	Unknown	Cross Reference Datasheet	Scan	PDF
2SC2590	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SC2590	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC2590	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC2590	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC2590	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SC2590	Panasonic	Silicon NPN Epitaxial Planar Power Transistor	Scan	PDF
2SC25900Q	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 120VCEO .5A TO-126	Original	PDF
2SC2590P	Panasonic	Silicon NPN Epitaxial Planar Type Transistors	Scan	PDF
2SC2590Q	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF
2SC2590R	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF
2SC2590R	Panasonic	Silicon NPN Epitaxial Planar Type Power Transistor	Original	PDF

2SC2590 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SA1110 Abstract: 2SC2590 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power ampliﬁcation Complementary to 2SC2590 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SA2110 2SC2590 O-126B-A1	PDF
2SC2590 Abstract: 2SA1110 Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT	Original	2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110	PDF
2SA1110 Abstract: 2SC2590 Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT	Original	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590	PDF
2SA1110 Abstract: 2SC2590 Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590	PDF
2SA1110 Abstract: 2SC2590 Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590	PDF
2SA1110 Abstract: 2SC2590 Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio	Original	2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590	PDF
2SC2590 Abstract: 2SA1110 Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110	PDF
2SA1110 Abstract: 2SC2590 Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio	Original	2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590	PDF
2SC2590 Abstract: No abstract text available Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • Excellent collector current IC characteristics of forward current transfer ratio hFE • High transition frequency fT	Original	2SC2590 O-126B 2SC2590	PDF
2SC2590 Abstract: No abstract text available Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d 3.8±0.3 • Excellent collector current IC characteristics of forward current	Original	2SC2590 O-126B 2SC2590	PDF
2SC2590 Abstract: No abstract text available Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio	Original	2SC2590 2SA1110 2SA1110, O-126B 2SC2590	PDF
30ma 40v npn Abstract: SEM 200 ic driver IC03a 2SA1110 2SC2590 Text: Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT	Original	2SC2590 O-126 2SA1110 150mA 200MHz 30ma 40v npn SEM 200 ic driver IC03a 2SA1110 2SC2590	PDF
2SA2110 Abstract: 2SA1110 2SC2590 2SA21 Text: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power ampliﬁcation Complementary to 2SC2590 • Package  Extremely satisfactory linearity of the forward current transfer ratio hFE	Original	2002/95/EC) 2SA2110 2SC2590 2SC2590, O-126B-A1 2SA2110 2SA1110 2SC2590 2SA21	PDF

2SC2590 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 ue pl d in an c se ed lud pl vi an m m es si	Original	2002/95/EC) 2SC2590 O-126B 2SC2590	PDF
Untitled Abstract: No abstract text available Text: 2SC2590S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.185 h(FE) Max. Current gain.330	Original	2SC2590S Freq200MÃ StyleTO-126 Code3-140	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
2SA1110 Abstract: 2SC2590 Text: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590	OCR Scan	2SA1110 2SC2590 O-126 2SA1110 2SC2590	PDF
2SC2633 Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216 Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D \| bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with	OCR Scan	2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216	PDF
2SC2625 Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)	OCR Scan	01l3Tc 2SC2556 2SC2556A 2SC2558-KA 800MHz 2SC2558-MA 2SC2559-KA 2SC2559-MA 2SC2625 2SC2559 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C	PDF
2SC2590 Abstract: WJ 3 2SA1110 hlk-2 Text: Power Transistors 2SC 2590 2SC2590 Silicon NPN Epitaxial Plànar Type • P ackage Dim ensions AF Pow er Am plifier C om plem entary Pair with 2 S A 1 1 1 0 ■ Features • V ery good linearity of DC c u rre n t gain I if e • High transition frequency (f-r)	OCR Scan	2SC2590 2SA1110 2SC2590 WJ 3 2SA1110 hlk-2	PDF
2SC2590 Abstract: hlk2 2SA1110 HLK-2 100w npn Text: Power T ransistors 2SÇ2590 2SC2590 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SA1110 ■Features • Very good linearity of DC current gain Iife • High transition frequency (f-r) • Optimum for the driver of 40~100W in complementary pair with	OCR Scan	2SC2590 2SA1110 2SC2590 hlk2 2SA1110 HLK-2 100w npn	PDF

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2SC2590 Search Results

2SC2590 Price and Stock

Panasonic Electronic Components 2SC25900Q

2SC2590 Datasheets (21)

2SC2590 Datasheets Context Search

2SA1110

Untitled

2SC2590

2SA1110

2SA1110

2SA1110

2SA1110

2SC2590

2SA1110

2SC2590

2SC2590

2SC2590

30ma 40v npn

2SA2110

2SC2590

Untitled

2sc5929

k2645

2N5657 equivalent

2SA1110

2SC2633

2SC2625

2SC2590

2SC2590