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    Toshiba America Electronic Components 2SB1481(TOJS,Q,M)

    TRANS PNP 100V 4A TO220NIS
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    Toshiba America Electronic Components 2SB1481

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    2SB1481 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1481 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1481 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1481 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1481 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1481 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1481 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1481 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1481 Toshiba Silicon PNP transistor for switching applications Scan PDF
    2SB1481 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE Scan PDF
    2SB1481(TOJS,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 4A 100V TO220-3 Original PDF

    2SB1481 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2241

    Abstract: TRANSISTOR D2241 2SD2241 2SB1481
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SD2241 2SB1481

    TRANSISTOR D2241

    Abstract: D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 TRANSISTOR D2241 D2241

    D2241

    Abstract: TRANSISTOR D2241 2SB1481 2SD2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 B1481 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241 2SB148
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 -55oducts B1481 2SB1481 2SD2241 2SB148

    2SB1481

    Abstract: 2SD2241
    Text: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications


    Original     		PDF 2SB1481 O-220F 2SD2241 O-220F) -100V 2SB1481 2SD2241

    2SD2241

    Abstract: 2SB1481 rl10c
    Text: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications


    Original     		PDF 2SD2241 O-220F 2SB1481 VCCA30V 2SD2241 2SB1481 rl10c

    B14-81

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 SC-67 2-10R1A B14-81

    D2241

    Abstract: TRANSISTOR D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 SC-67 2-10R1A D2241 TRANSISTOR D2241

    2SB1481

    Abstract: No abstract text available
    Text: IziieuiJ ^£.mi-(2onductoi ^-Pioducti, Una. Ls TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1481 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)cEo=-100V(Min)


    Original     		PDF 2SB1481 -100V 2SD2241 O-220F -10rnA; -100V; 2SB1481

    B1481

    Abstract: 2SB1481 2SD2241 100-C3000
    Text: 2SB1481 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1481 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 • 直流電流増幅率が高い。 : hFE 1 = 2000 (最小) •


    Original     		PDF 2SB1481 2SD2241 SC-67 2-10R1A 20070701-JA B1481 2SB1481 2SD2241 100-C3000

    Darlington NPN Silicon Diode

    Abstract: DARLINGTON 3A 100V npn 2SB1481 2SD2241
    Text: Inchange Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain : hFE=2000 Min ・Low saturation voltage ・Complement to type 2SB1481 ・DARLINGTON APPLICATIONS ・With switching applications


    Original     		PDF 2SD2241 O-220F 2SB1481 VCC30V Darlington NPN Silicon Diode DARLINGTON 3A 100V npn 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SB1481

    Abstract: 2SD2241 T32001
    Text: TO SH IBA 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , In = -1 .5 A ) Low Saturation Voltage : V £E (sat)“ — (Max.) (I0 = —3A)


    OCR Scan     		PDF 2SB1481 2SD2241 2SB1481 T32001

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 14 81 SWITCHING APPLICATIONS U nit in mm High DC Current Gain : hFE = 2000 Min. (VCe = - 2 V , IC = - 1 .5 A ) • T.r»w S n tn r n fin n Vnltacri* * W't-n - • Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    2SD2241

    Abstract: 2SB1481 S5 3000
    Text: TOSHIBA 2SD2241 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 Unit in mm SW ITCHING APPLICATIONS • High DC Current Gain • r : hp^ —2000 Min. <v> o Low Saturation Voltage : V q £ (sat) = l-5V (Max.) cn CO O Complementary to 2SB1481 1.1 1.1


    OCR Scan     		PDF 2SD2241 2SB1481 100//S* 2SD2241 2SB1481 S5 3000

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • High DC Current Gain : hpE = 2000 Min. (VCE = -2 V , IC= -1.5A ) Low Saturation Voltage : Vc e (sat)~ —1-5V (Max.) (Iq = —3A) Complementary to 2SD2241


    OCR Scan     		PDF 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2241 2SD2241 TO SHIBA TRANSISTOR SW ITCHING APPLICATIONS • • • SILICON NPN EPITAXIAL TYPE Unit in mm ^ 3.2 ± 0.2 1 0 1 0.3 High DC Current Gain : hpg = 2000 Min. Low Saturation Voltage : V q e = l-5V (Max.) Complementary to 2SB1481


    OCR Scan     		PDF 2SD2241 2SB1481

    Untitled

    Abstract: No abstract text available
    Text: 2SB1481 SILICON PNP EPITAXIAL TYPE U nit in mm SW ITCHING APPLICATIONS 10 ±0.3 • • • High DC Current Gain : hFE = 2000 M m . (V cE = -2V , IC = -1 .5 A ) Low Saturation Voltage : VcE(sat) = — (Max.) (Ic = —3A) Complementary to 2SD2241 W - M A X I M U M RATI NGS (Ta = 2 5°C)


    OCR Scan     		PDF 2SB1481 2SD2241 SC-67

    2SB1481

    Abstract: 2SD2241
    Text: T O S H IB A 2SB1481 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 481 Unit in mm SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -1.5A ) Low Saturation Voltage : Vq^ (sat)“ —1.5V (Max.) (I0 = —3A)


    OCR Scan     		PDF 2SB1481 2SD2241 2SB1481

    Untitled

    Abstract: No abstract text available
    Text: 2SD2241 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm SWITCHING APPLICATIONS • • • 10 +0.3 High DC Current Gain : hjrE = 2000 Min. Low Saturation Voltage : V q e (§at)= 1-5V (Max.) Complementary to 2SB1481 , $ 3.2 ± 0.2 2.7±02


    OCR Scan     		PDF 2SD2241 2SB1481

    A1241

    Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
    Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0


    OCR Scan     		PDF A1241 2SD1221 2SC4681 2SC4685 c4684 2_s transistors c3072 B834 SA1357 c4793

    2SB1481

    Abstract: 2SD2241 equivalent of 2sd2241
    Text: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO


    OCR Scan     		PDF 2SD2241 2SB1481 2SB1481 2SD2241 equivalent of 2sd2241