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    2SB1261 Search Results

    2SB1261 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1261(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E2-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E1-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SB1261 Price and Stock

    Micro Commercial Components 2SB1261-TP

    TRANS PNP 60V 3A DPAK
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    DigiKey 2SB1261-TP Reel
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    Rochester Electronics LLC 2SB1261(1)-AZ

    2SB1261 - PNP SILICON EPITAXIAL
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    DigiKey 2SB1261(1)-AZ Bulk 359
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    Renesas Electronics Corporation 2SB1261(1)-AZ

    Transistor GP BJT PNP 60V 3A TO-252 - Bulk (Alt: 2SB1261(1)-AZ)
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    Avnet Americas 2SB1261(1)-AZ Bulk 4 Weeks 432
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    Rochester Electronics 2SB1261(1)-AZ 6,207 1
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    NEC Electronics Group 2SB1261-Z-E1

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    Bristol Electronics 2SB1261-Z-E1 1,215
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    Renesas Electronics Corporation 2SB1261(0)-Z-E1-AZ

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    Quest Components 2SB1261(0)-Z-E1-AZ 931
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    2SB1261 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1261 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1261 NEC Semiconductor Selection Guide Original PDF
    2SB1261 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1261 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1261 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1261 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1261 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1261 NEC Silicon power transistor Scan PDF
    2SB1261-TP Micro Commercial Components TRANS PNP 60V 3A DPAK Original PDF
    2SB1261-Z Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SB1261-Z NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1261-Z NEC Semiconductor Selection Guide Original PDF
    2SB1261-Z Transys Electronics Plastic-Encapsulate Transistors Original PDF
    2SB1261-Z TY Semiconductor PNP Silicon Epitaxial Transistor - TO-252 Original PDF
    2SB1261Z Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1261Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1261Z Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1261-Z Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1261Z Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1261-Z NEC PNP SILICON EPITAXIAL TRANSISTOR MP-3 Scan PDF

    2SB1261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1261-Z

    Abstract: high hfe transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 1 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V


    Original     		PDF O-251 2SB1261-Z O-251 -200mA -600mA -150mA 2SB1261-Z high hfe transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF O-251 2SB1261-Z O-251 -200mA -600mA -150mA

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1261   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics


    Original     		PDF 2SB1261

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x • • 2SB1261   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics


    Original     		PDF 2SB1261

    2SB1261-Z

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2


    Original     		PDF 2SB1261-Z O-252 2SB1261-Z

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF O-252 2SB1261

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x • • • 2SB1261   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics


    Original     		PDF 2SB1261

    Untitled

    Abstract: No abstract text available
    Text: 2SB1261 Transistor PNP TO-252-2L 1. BASE 1 2. COLLECTOR 3. EMITTER Features — — High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF 2SB1261 O-252-2L -200mA -600mA -150mA

    Z Transistor

    Abstract: 2SB1261-Z
    Text: 2SB1261-Z 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SB1261-Z O-252 -200mA -600mA -150mA Z Transistor 2SB1261-Z

    2SB1261

    Abstract: W4150 1261-Z 1261
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SB1261,1261-Z PNP エピタキシアル形シリコン・トランジスタ 低周波電力増幅，中速度スイッチング 外形図（単位：mm） 小形外形でありながら大電流特性を有しており，スイッチング速度


    Original     		PDF 2SB1261 1261-Z Cycle50 OTO-251MP-3 VCEO-60 O-252MP-3Z D18262JJ4V0DS004 D18262JJ4V0DS W4150 1261-Z 1261

    2SB1261

    Abstract: high hfe transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO-252-2L FEATURES 123 1. BASE z z 1 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-252-2L 2SB1261 O-252-2L -200mA -600mA -150mA 2SB1261 high hfe transistor

    2SB1261-Z

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO:


    Original     		PDF O-252 2SB1261-Z O-252 -200mA -600mA -150mA 2SB1261-Z

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)


    Original     		PDF 2SB1261-Z 2SB1261-Z

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 5.55 -0.15 -0.3V. +0.15 0.50 -0.15


    Original     		PDF 2SB1261-Z O-252

    to251

    Abstract: 2SB1261Z 2sb1261 l 2sb1261
    Text: 2SB1261-Z PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-251/TO-252-2L 2SB1261-Z O-251 O-252-2L -200mA -600mA -150mA to251 2SB1261Z 2sb1261 l 2sb1261

    2SB1261-Z

    Abstract: 2SB1261Z
    Text: Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-252 2SB1261-Z O-252 -200mA -600mA -150mA 2SB1261-Z 2SB1261Z

    D1826

    Abstract: 2SB1261 2SB1261-Z 2sb126
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)


    Original     		PDF 2SB1261-Z 2SB1261-Z D1826 2SB1261 2sb126

    2SB1261

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 2SB1261 1261-Z O-251MP-3 VCEO-60 O-252MP-3Z D18262JJ4V0DS004 D18262JJ4V0DS

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    HF-62

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 D ESC R IPT IO N 2 S B 1 2 6 1 -Z is design ed for A u d io Frequency A m plifier and PACKAGE DIMENSIONS in millimeters Sw itching, especially in H ybrid integrated Circuits. FE A T U R E S


    OCR Scan     		PDF 2SB1261-Z MSI-1209} HF-62

    2SB1261-Z

    Abstract: MEI-1202 2sb1261 l 2SB1261
    Text: DATA SHEET N E ^ r C SILICON TRANSISTOR 2 S B 1 2 6 1 -Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SB1261-Z is designed for Audio Frequency Amplifier and PACKAGE DIMENSIONS in millimeters Switching, especially in Hybrid Integrated Circuits. FEATURES


    OCR Scan     		PDF 2SB1261-Z 2SB1261-Z IEI-1209) MEI-1202 2sb1261 l 2SB1261

    2SB1621

    Abstract: No abstract text available
    Text: SILICO N TR A N SISTO R 2SB1261-Z P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M P -3 D E S C R IP T IO N 2 S B 1 2 6 1 - Z is d e sig n e d fo r A u d i o F r e q u e n c y A m p lif ie r a n d S w it c h in g , e sp e c ia lly in H y b r id In te g ra te d C irc u its.


    OCR Scan     		PDF 2SB1261-Z 2SB1621-Z 2SB1621

    2sb1355

    Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
    Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^


    OCR Scan     		PDF 2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226