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    2SB1031 Search Results

    2SB1031 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1031 Hitachi Semiconductor SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING Scan PDF
    2SB1031 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1031 Unknown Cross Reference Datasheet Scan PDF
    2SB1031 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1031 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1031 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1031K Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K Scan PDF
    2SB1031K Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1031K Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1031K Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1031K Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1031K Unknown Scan PDF
    2SB1031K Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SB1031 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1031

    Abstract: 2SD1435 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications


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    PDF 2SD1435 2SB1031 150mA 2SB1031 2SD1435 NPN POWER DARLINGTON TRANSISTORS

    2SD1435

    Abstract: 2SB1031 NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification 2SD1435 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications


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    PDF 2SD1435 2SB1031 150mA 2SD1435 2SB1031 NPN POWER DARLINGTON TRANSISTORS

    2SB1031

    Abstract: 2SD1435
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -8A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 APPLICATIONS


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    PDF -100V 2SD1435 -16mA -150mA -100V, -16mA; 2SB1031 2SD1435

    B0346

    Abstract: KT818G SM2184 B0744C b0912 KT818 SM2183 BOW46 2SA1444 2SB554R
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 40 50 60 60 60 60 60 60 60 60 60 60 60 20 20 20 20 20 20 20 25 25 35 g:~~~; ~~t~~:~ St ~~ ~g ~~ 2SB707 B0346 BOT82F 2SA1292 2SA1444 BOW45 2SB883 SK3221 2N6246 2SA1042 SM2183 BOT84 BOT84 BOT84


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    PDF v10torola 2SAl116 2SAl169 2SB600 2SB645R IOA1302 O-247var B0346 KT818G SM2184 B0744C b0912 KT818 SM2183 BOW46 2SA1444 2SB554R

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80

    2SB1013

    Abstract: 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041
    Text: Page 1 of 2 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB1001 -20 -6 -2A 1W 150 200 -2 -100 80* 50 2SD1367


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    PDF 2SB1001 2SD1367 2SB1002 2SD1368 2SB1003 2SB1004 2SB1005 2SB1007 2SB1008 2SB1009 2SB1013 2SB1014 2SB1074 2SB1060 2SB1047 2sb1099 2SB1100 2SB1039 2SB1040 2SB1041

    2SD556 sanken

    Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15


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    PDF BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7

    2SB1031

    Abstract: 2SD1435
    Text: HITACHI 2SD1435 R SILICON NPN EPITAXIAL LOW FREQ UENC Y POWER AM PLIFIER HIGH CURRENT SW ITCHING CO M PLEM ENTARY PAIR WITH 2SB1031<gs u 1. Rase 2. I fdtaî titti C o lle c t o r (Flange 3. tin n ie r ( f î i n i e n i i o r u in m it » 16 , a* 11 (TO-3P)


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    PDF 2SD1435 2SB1031< 2SD1435Â 2SD1435< 2SB1031

    2SB1031

    Abstract: 2SD1435 2SD143
    Text: HITACHI 2SB1031 R SILIC O N P N P EPITA XIA L LO W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P LE M E N T A R Y PA IR W ITH 2 S0 1 4 3 5 ♦3 2 10.2 il Vpß LJJ i Ü a 8 31 * li i Mtnut - ¡i* 8| 1. Base Ï Si _ 2. Collccior (Flange L I JJA tM


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    PDF 2SB1031 2SD1435Â 2SBI03IÂ -16niA 2SB1031Â 2SB1031 2SD1435 2SD143

    2SB1039

    Abstract: 2SB1045 2SB1038 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035
    Text: - 72 - w. T a = 2 5 sC 1* E P Í Í T c = 2 T O m 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SB1035 2SB1036 2SB1037 2SB1038 2SB1039 2SB1045 2SB1046 2SB1048 2SB1050 2SB Î052 2SB1054 2SB1055 2SB1056 2SB1057 2SB1058 2SB1059 2SB1061 2SB1062 2SB1063


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    PDF 2SB1028 2SB1030 2SB1030A 2SB1031K 2SB1032K 2SB1033 2SD1499 2SB1063 2SD1505 O-220ABÂ 2SB1039 2SB1045 2SB1038 2SB1035

    2SB1031

    Abstract: No abstract text available
    Text: HITACHI 2SB1031 K SILICON PN P EPITAXIAL LOW FREQUENCY PO W ER A M P U F llR COMPLEMENTARY PAIR WITH 2S D 1435 MS in a Liu 1. Bue 2. Collector (FUnge Î . E m iu c i CDtmetmoos in nun) (typ » :'»i> (TO-3P) I ABSOLUTE MAXIMUM RATINGS (Ta=25*C) Hem Symbol


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    PDF 2SB1031 -150mA* -16niA 2SB1031®

    2SB1031

    Abstract: 2SD1435 2SD143
    Text: H ITA C H I 2 S B 1 0 3 1 R SILICON PN P EPITAXIAL LOW FR E Q U E N C Y P O W E R AM PLIFIER C O M PLEM EN TA RY PAIR WITH 2 S 0 1 4 3 5 «.no.! W -Owy _ n .Lii OH 1. Base 2. Coilecior (Flange 3. Emitter (Dimensions in mm} r w p LU (T O -3P ) • A B S O L U T E MAXIMUM RA TIN G S (Ta=25cC>


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    PDF 2SB1031 2SD1435Â 2SB1031 2SD1435 2SD143

    2SA818

    Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
    Text: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI


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    PDF 2sa1209 2sa1142 2sa818 2sa1284 2sa1220 2sb1086 2sa1011 2sa968 2sa1220a 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2SA934

    Abstract: S51A 2S897 2sa1264 2SA1243 953a 2SA1719 2SBI344 S55A 2SB816
    Text: - ü s „ Type No. 2S8 951 2S3 S 51A 2SB 952 2SB 953 . ~ 2SB 953A 2SB 954 2SB 955 - 2S8 S55A 2S6 956 2SB 957 2SB 958 2SB 959 2SB 960 2SB 962 _ 2SB 962Z 2SB 963 2SB 9631 2SB 964 2SB 965 2SB 966 2SB 967 2SB 968 2SB 969 2SB 970 „ ' ^ ✓ 2S8 971 2SB 972 2SB 973


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    PDF 2SB1225 2SB1022 2SA1719 2SB1103 2SBI344 2SA1719 2SB1344 2SB1269 2SA1327 2SA934 S51A 2S897 2sa1264 2SA1243 953a 2SBI344 S55A 2SB816

    2SD1431

    Abstract: 2SD1415 2SD1432 2-16D3A 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423
    Text: - 248 - Ta-25T>, *E[l[äTc=25'C M S ?± 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A & PSW/D Vq b q VcEQ (V) (V) 60 S Ic C D O Pc Pc* ICBO (A) (ff) (ff) (max) <//A) 60 7 2 VcB (V) S f (min) i U (max) 30 100 60 2000 15 0 0 0 f t ( T a = 2 5 tC )


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    PDF 2SD1417 2SD1418 2SD1419 2SD1420 2SD1421 2SD1423 2SD1423A 2SD1424 KTSD1442 2SB925 2SD1431 2SD1415 2SD1432 2-16D3A

    2SA1019

    Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r
    Text: - 48 - w. tt s Typ e No. « M anuf. 8 2SB 605 - 2 SB 606 * ± a „ Z # SANYO 2SB764 Ä 2 TOSHIBA m b NEC 2SA505 B ÎL HITACH I 2SA673A ÎL B 2SB 612 a îl 2SB817 B 8 2SB775 2SB686 2SB775 2SB686 - a # a « a s 2SB776 2SB688 2SB688 2SB 619 fè T 2SB816 2SB 620


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    PDF 2SB764 2SA505 2SA673A 2SA684 2SA935 2SA879 2SB649 2SB1086A 2SB817 2SB775 2SA1019 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r