Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)
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2002/95/EC)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 Low collector to emitter saturation voltage VCE(sat).
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2SB0970
2SB970)
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • ARN-5 + 2SB0970 (2SB970)
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XN07651
XN7651)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Emitter-base voltage (Collector open)
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2002/95/EC)
2SB0970
2SB970)
SC-59
2SB0970
2SB970
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2SB0970
Abstract: 2SB970 2SD1328 XN04604 XN4604
Text: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD1328 + 2SB0970(2SB970) ■ Absolute Maximum Ratings
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XN04604
XN4604)
2SD1328
2SB0970
2SB970)
2SB970
2SD1328
XN04604
XN4604
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Transistor hFE CLASSIFICATION Marking CE
Abstract: hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Symbol Rating
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2002/95/EC)
2SB0970
2SB970)
Transistor hFE CLASSIFICATION Marking CE
hFE is transistor to-220
Vbe 8 V
2SB0970
2SB970
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2SB0970
Abstract: 2SB970
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05
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2002/95/EC)
2SB0970
2SB970)
2SB0970
2SB970
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2SB0970
Abstract: 2SB970 XN04404 XN4404
Text: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0970(2SB970) x 2 elements 0 to 0.1
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XN04404
XN4404)
2SB0970
2SB970)
2SB970
XN04404
XN4404
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2SB0970
Abstract: 2SB970
Text: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and
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2SB0970
2SB970)
20nductor
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)
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2002/95/EC)
2SB0970
2SB970)
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2SB0970
Abstract: 2SB970
Text: Transistors 2SB0970 2SB970 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C
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2SB0970
2SB970)
2SB0970
2SB970
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06
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2SB0970
2SB970)
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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XN4608
Abstract: 2SB0970 2SB970 2SD0601A 2SD601A XN04608
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65)
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XN04608
XN4608)
XN4608
2SB0970
2SB970
2SD0601A
2SD601A
XN04608
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xn07
Abstract: 2SB0970 2SB970 XN07651 XN7651
Text: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d For motor drive 5 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05
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XN7651)
xn07
2SB0970
2SB970
XN07651
XN7651
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2SB0970
Abstract: XN04404G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • Code Mini6-G3 • Pin Name
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XN04404G
2SB0970
XN04404G
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2SB0970
Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification (Tr1) For amplification of low-frequency output (Tr2)
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XN04608
XN4608)
2SB0970
2SB970
2SD0601A
2SD601A
XN04608
XN4608
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2SB0970
Abstract: 2SD1328 XN04604 XN04604G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04604G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification • Package Code Mini6-G3 Pin Name
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XN04604G
2SD1328
2SB0970
2SB0970
2SD1328
XN04604
XN04604G
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2SB0970
Abstract: 2SB970 XN04404 XN4404
Text: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 6 3 2 1 0.65±0.15 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10
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XN04404
XN4404)
2SB0970
2SB970)
2SB0970
2SB970
XN04404
XN4404
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2SB0970
Abstract: XN04404G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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XN04404G
2SB0970
XN04404G
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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