2SD0875G
Abstract: 2SB0767G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Features ue pl d in an c se ed lud
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Original
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2002/95/EC)
2SD0875G
2SB0767G
2SD0875G
2SB0767G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SB0767
2SB767)
2SD0875
2SD875)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc
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Original
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2002/95/EC)
2SB0767
2SB767)
2SD0875
2SD875)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO
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Original
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2002/95/EC)
2SB0767G
2SD0875G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Features ■ Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO
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Original
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2002/95/EC)
2SD0875G
2SB0767G
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO
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Original
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2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO
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Original
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2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage
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Original
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2SB0767
2SB767)
2SD0875
2SD875)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating
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Original
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2002/95/EC)
2SD0875
2SD875)
2SB0767
2SB767)
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3
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Original
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2002/95/EC)
2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC
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Original
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2002/95/EC)
2SD0875G
2SB0767G
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1
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Original
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2002/95/EC)
2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 Parameter Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current
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Original
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2SB0767
2SB767)
2SD0875
2SD875)
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1
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Original
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2SD0875
2SD875)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767G
Abstract: 2SD0875G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875G Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO
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Original
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2002/95/EC)
2SD0875G
2SB0767G
2SB0767G
2SD0875G
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO
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Original
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2SD0875
2SD875)
2SB0767
2SB767)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 2.5±0.1 0.4 max. 2.6±0.1 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
|
2002/95/EC)
2SB0767
2SB767)
2SD0875
2SD875)
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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Original
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2002/95/EC)
2SB0767
2SB767)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open)
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Original
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2SB0767
2SB767)
2SD0875
2SD875)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1
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Original
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2002/95/EC)
2SB0767
2SB767)
2SD0875
2SD875)
2SB0767
2SB767
2SD0875
2SD875
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PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC
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Original
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2002/95/EC)
2SB0767G
2SD0875G
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PDF
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2SB0767G
Abstract: 2SD0875G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0875G • Package • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO
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Original
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2002/95/EC)
2SB0767G
2SD0875G
2SB0767G
2SD0875G
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PDF
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2SB0767
Abstract: 2SB767 2SD0875 2SD875
Text: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 0.4±0.08 1.5±0.1 Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current
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Original
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2SB0767
2SB767)
2SD0875
2SD875)
2SB0767
2SB767
2SD0875
2SD875
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PDF
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