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    2SA812R Search Results

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    2SA812QLT1

    Abstract: ESILICON
    Text: WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ FM120-M+ 2SA812xLT1 OD-123H FM1200-M+ 2SC1623 FM120-MH FM130-MH FM140-M FM150-MH 2SA812QLT1 ESILICON

    2Sc945 equivalent

    Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
    Text: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560


    OCR Scan     		PDF 2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent

    2SA81

    Abstract: 2sA812R
    Text: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i


    OCR Scan     		PDF 2SA812 2SA812R 2SC1623 2SA81 2sA812R