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    2SA2142 Price and Stock

    Toshiba America Electronic Components 2SA2142(TE16L1,NQ)

    TRANS PNP 600V PW-MOLD
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    DigiKey 2SA2142(TE16L1,NQ) Cut Tape 3,718 1
    • 1 $1.48
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    • 100 $0.5918
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    2SA2142(TE16L1,NQ) Digi-Reel 3,718 1
    • 1 $1.48
    • 10 $0.911
    • 100 $0.5918
    • 1000 $0.4134
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    2SA2142(TE16L1,NQ) Reel 2,000 2,000
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    Verical 2SA2142(TE16L1,NQ) 2,002 18
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    • 100 $0.835
    • 1000 $0.495
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    2SA2142(TE16L1,NQ) 845 174
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    Quest Components 2SA2142(TE16L1,NQ) 676
    • 1 $1.18
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    • 100 $0.59
    • 1000 $0.472
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    2SA2142(TE16L1,NQ) 676
    • 1 $1.18
    • 10 $1.18
    • 100 $0.59
    • 1000 $0.472
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    Chip1Stop 2SA2142(TE16L1,NQ) Cut Tape 2,002
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    • 10 $0.788
    • 100 $0.351
    • 1000 $0.267
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    EBV Elektronik 2SA2142(TE16L1,NQ) 17 Weeks 2,000
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    Toshiba America Electronic Components 2SA2142(TE16L1NQ)

    Transistor PNP 600V 3-Pin New PW-Mold - Tape and Reel (Alt: 2SA2142(TE16L1,NQ))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SA2142(TE16L1NQ) Reel 18 Weeks 2,000
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    • 10000 $0.35358
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    Others 2SA2142

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    ComSIT USA 2SA2142 100,000
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    2SA2142 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA2142 Toshiba PNP Transistor Original PDF

    2SA2142 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2142

    Abstract: 2SA2142
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA2142 A2142 2SA2142

    A2142

    Abstract: 2SA2142
    Text: 2SA2142 東芝トランジスタ シリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA2142 20070701-JA A2142 2SA2142

    A2142

    Abstract: 2SA2142 2SA21
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −600 V


    Original     		PDF 2SA2142 2SA2142oducts A2142 2SA2142 2SA21

    Untitled

    Abstract: No abstract text available
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA2142

    Untitled

    Abstract: No abstract text available
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA2142

    Untitled

    Abstract: No abstract text available
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA2142

    A2142

    Abstract: 2SA2142
    Text: 2SA2142 東芝トランジスタ シリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA2142 A2142 2SA2142

    A2142

    Abstract: 2SA2142
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High Voltage Switching Applications • Unit: mm High Breakdown Voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −600


    Original     		PDF 2SA2142 SC-64 A2142 2SA2142

    2SA2142

    Abstract: A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
    Text: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA2142 2SA2142 A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322