Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1972 Search Results

    SF Impression Pixel

    2SA1972 Price and Stock

    Toshiba America Electronic Components 2SA1972,F(J

    TRANS PNP 400V 0.5A TO92MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1972,F(J Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SA1972,T6WNLF(J

    TRANS PNP 400V 0.5A TO92MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1972,T6WNLF(J Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SA1972(F)

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SA1972(F) 1,040
    • 1 -
    • 10 -
    • 100 $2.05
    • 1000 $1.67
    • 10000 $1.67
    		Buy Now

    2SA1972 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1972 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1972 Toshiba Silicon PNP triple diffused type transistor for high voltage switching applications Scan PDF
    2SA1972 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SA1972,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 500MA 400V TO226-3 Original PDF
    2SA1972,T6WNLF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 500MA 400V TO226-3 Original PDF
    2SA1972(TE6,F,M) Toshiba 2SA1972 - TRANSISTOR PNP 400V 0.5A LSTM Original PDF

    2SA1972 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1972

    Abstract: 2SA1972
    Text: 2SA1972 東芝トランジスタ シリコンPNP三重拡散形 2SA1972 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA1972 O-92MOD a1972 2SA1972

    A1972

    Abstract: 2SA1972 A1972 IE
    Text: 2SA1972 東芝トランジスタ シリコンPNP三重拡散形 2SA1972 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA1972 O-92MOD 20070701-JA A1972 2SA1972 A1972 IE

    transistor A1972

    Abstract: A1972 A1972 IE 2SA1972
    Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1972 transistor A1972 A1972 A1972 IE 2SA1972

    a1972

    Abstract: transistor A1972 2SA1972 A1972 IE
    Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1972 O-92MOD a1972 transistor A1972 2SA1972 A1972 IE

    a1972

    Abstract: transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor
    Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1972 a1972 transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor

    transistor A1972

    Abstract: a1972 2SA1972 a1972 Transistor Nortec 19
    Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400


    Original     		PDF 2SA1972 transistor A1972 a1972 2SA1972 a1972 Transistor Nortec 19

    transistor 2sa1972

    Abstract: transistor A1972 A1972
    Text: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400


    Original     		PDF 2SA1972 transistor 2sa1972 transistor A1972 A1972

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    A1972

    Abstract: 2SA1972
    Text: 2SA1972 T O S H IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. • High Voltage : V ç;e = —400V 9 M A X IM U M RATINGS Ta = 25°C SYMBOL v CBO VCEO Ve b o ic ÏCP :B PC Tj


    OCR Scan     		PDF 2SA1972 --400V 75MAX. A1972 2SA1972

    a1972

    Abstract: transistor A1972 transistor 2sa1972 2SA1972
    Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS HicrVi V n ltn crp V' m r i = —¿100 V V^-Cj - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SA1972 a1972 transistor A1972 transistor 2sa1972 2SA1972

    A1972

    Abstract: transistor A1972 2sa1972
    Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS HicrVi V n ltn crp V' m r i = —¿100 V V^-Cj - MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SA1972 A1972 transistor A1972 2sa1972

    2SA1972

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1972 TOSHIBA TRANSISTOR ? SILICON PNP TRIPLE DIFFUSED TYPE <; A 1 Q 7 9 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 5.1 M AX. Rîo4i V n iw * • v ^ = _ á n n v ' “ ö - ’ . T \jJ 2 j ' MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SA1972 2SA1972

    a1972

    Abstract: 2sa1972 transistor A1972
    Text: 2SA1972 TO SH IBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. HicrVi V n lt n crp V' m r i = —¿100 V^-Cj - -V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1972 75MAX. a1972 2sa1972 transistor A1972

    Untitled

    Abstract: No abstract text available
    Text: 2SA1972 TO SH IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e = —400V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SA1972

    Untitled

    Abstract: No abstract text available
    Text: 2SA1972 TOSHIBA 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 M AX. High Voltage : VCE = -400V M A X IM U M RATINGS Ta=25°C SYMBOL v CBO VCEO v EBO CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SA1972 -400V

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266