2N5339 Search Results

2N5339

Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
Contextual Info: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —

Contextual Info: 7^ 2 ^ 5 3 ? 002=1335 7 • £ jl 1 ^ 3 2 -O S 2N5336/5337 2N5338/5339 SCS-THOMSON i&JCTHMOtgS S G S-TH0MS0N 3ÜE » HIGH CURRENT FAST SWITCHING APPLICATION DESCRIPTION The 2N5336, 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec

Contextual Info: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.

NPN 200 VOLTS POWER TRANSISTOR

Abstract: 2N5339 JAN 2N5339
Contextual Info: 2N5339 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5339J

Contextual Info: t-Sztnl-Conduatoi LProdacii, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN POWER SILICON SWITCHING TRANSISTOR 2N5339 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high

2N5339JAN

Abstract: Bipolar Transistors
Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N5339 JANTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/560 NPN POWER SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

2N5339

Contextual Info: 2N5339 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

2N5338X

Abstract: 2N5339X 2674
Contextual Info: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec

2N5339 JANS

Abstract: 2n5339
Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage

Contextual Info: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec

2N5339 JAN

Abstract: 2N5339 Diode NPN 200 VOLTS POWER TRANSISTOR 2N5339 2N5339J 2N5339JV 2N5339JX
Contextual Info: 2N5339 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5339J

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

2N5339

Abstract: 2N4150 2N5154 2n5339 data sheet 2C5154 2N3998 2N3999 2N4150S 2N5152 2N5152L
Contextual Info: Data Sheet No. 2C5154 Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150, 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium

2N5339

Abstract: 2N5339JANTX
Contextual Info: TECHNICAL DATA MIL-PRF 2N5339 JANTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/560 NPN POWER SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 250C 1

2n5339 jantx

Abstract: 2N5339 20VDC 0011 TRANSISTOR 276AA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX

Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage

2N5339

Contextual Info: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.

2N5339

Contextual Info: TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 Devices Qualified Level 2N5339 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

Contextual Info: 2N5339+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5339+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

LT 5337

Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Contextual Info: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.

Contextual Info: 2N5338X 2N5339X SEME LAB MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200)

2n5339

Contextual Info: MOTOROLA SC XSTRS/R F 13E D | L3L7254 0084542 1 | 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —