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    2N2483 Price and Stock

    . 2N2483

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    Bristol Electronics 2N2483 75 3
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    Raytheon 2N2483

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    Texas Instruments 2N2483

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    NIC Components Corp 2N2483

    Bipolar Junction Transistor, NPN Type, TO-18
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    Quest Components 2N2483 217
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    GTCAP 2N2483

    Bipolar Junction Transistor, NPN Type, TO-18
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    Quest Components 2N2483 168
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    Find more 2N2483 price and stock on Findchips.com

    2N2483 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N2483 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=60 / Ic=50m / Hfe=80min / fT(Hz)=- / Pwr(W)=0.36 Original PDF
    2N2483 Philips Semiconductors Silicon Planar Transistors Original PDF
    2N2483 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=60 / Ic=50m / Hfe=80min / fT(Hz)=- / Pwr(W)=0.36 Original PDF
    2N2483 Semico Chip Type 2C2484 Geometry 0307 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=60 / Ic=50m / Hfe=80min / fT(Hz)=- / Pwr(W)=0.36 Original PDF
    2N2483 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2483 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N2483 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2483 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2483 Dionics NPN Silicon Transistor Chips Scan PDF
    2N2483 Dionics NPN SILICON TRANSISTOR CHIP Scan PDF
    2N2483 Dionics Transistor Chips Scan PDF
    2N2483 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2483 General Diode Transistor Selection Guide Scan PDF
    2N2483 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N2483 Micro Electronics Semiconductor Devices Scan PDF
    2N2483 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2483 Motorola The European Selection Data Book 1976 Scan PDF
    2N2483 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2483 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2483 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N2483 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2484 motorola

    Abstract: MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483
    Text: QUAD DUAL IN-LINE NPN SILICON MATCHED AMPLIFIER TRANSISTORS . designed for low-level, high-gain amplifier applications. @ Low Noise Figure – @ Ic = 10pAdc NE = 3.0 dB Typ – MPQ2483 = 2.0 dB (Typ) – MPQ2484 @ Transistor Similar @ Compact Size to 2N2483


    Original     		PDF 10pAdc MPQ2483 MPQ2484 2N2483 2N2484 MPQ2483, MPQ2483-1, MPQ2483-2 MPQ2484, MPQ2484-I 2N2484 motorola MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483

    Untitled

    Abstract: No abstract text available
    Text: ^ctdxy isStmi-Conchctoi ZPiotLata., Una. TELEPHONE: 873 376-2882 (212) 227-6008 FAX! (973) 378 0960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2483 NPN SILICON TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JFflFC TO-1H Icnrt 1 Fmittnr l.o.irt 2 Unso


    Original     		PDF 2N2483 R9-10KI1, BW-20 1000cps, 200cpS -10K1I

    2n2771

    Abstract: 2N2483
    Text: Search Results Part number search for devices beginning "2N2483" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2483 NPN TO18 60V 0.05A 80 - 5/1m - 0.36W


    Original     		PDF 2N2483" 2N2483 2N2483-JQR-B 2N2604" 2N2604 100MHz 2N2771 2N2771-JQR-B 2N2892" 2N2892

    Untitled

    Abstract: No abstract text available
    Text: 2N2483-JQR-B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF 2N2483-JQR-B O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2483-JQR-B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF 2N2483-JQR-B O206AA) 2-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF 2N2483 O206AA) 16-Jul-02

    2N2483

    Abstract: 60N60
    Text: 2N2483 Chip: geometry 0307; polarity NPN 33.72 Transistors Transistor. 1 of 2 Home Part Number: 2N2483 Online Store 2N2483 Diodes C hip: geo m et ry 0 3 0 7 ; po larit y NPN Transistors Enter code INTER3 at


    Original     		PDF 2N2483 com/2n2483 2N2483 60N60

    replacement BC107

    Abstract: 2N4124 bc548 BC109C replacement bcy71 replacement 2n3053 replacement 2n2222a REPLACEMENT 2N4126 bc548 2n3019 equivalent BC109C datasheet 2n4125 equivalent
    Text: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483


    Original     		PDF 2N2297 2N3019 2N2483 2N2484 2N2904; 2N2904A 2N2905A 2N3020 2N3053 replacement BC107 2N4124 bc548 BC109C replacement bcy71 replacement 2n3053 replacement 2n2222a REPLACEMENT 2N4126 bc548 2n3019 equivalent BC109C datasheet 2n4125 equivalent

    BCW91B

    Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)


    Original     		PDF BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 BCW91B BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN

    2N2483

    Abstract: 2N2920 2N930 2C2484 2N2484 2N2920 applications 2N2920A
    Text: Data Sheet No. 2C2484 Generic Packaged Part: Chip Type 2C2484 Geometry 0307 Polarity NPN 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high


    Original     		PDF 2C2484 2N2483, 2N2484, 2N2920, 2N930 2C2484 2N930, 2N2483 2N2920 2N930 2N2484 2N2920 applications 2N2920A

    2N2483

    Abstract: No abstract text available
    Text: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF 2N2483 O206AA) 19-Jun-02 2N2483

    2N2483

    Abstract: No abstract text available
    Text: 2N2483 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original     		PDF 2N2483 O206AA) 2-Aug-02 2N2483

    2N2483

    Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
    Text: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max


    OCR Scan     		PDF 2N2483 2N2484 2N718A 2N720 2N720A 2N834 2N910 2N911 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A

    Untitled

    Abstract: No abstract text available
    Text: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier


    OCR Scan     		PDF 2N2483 2N2484 10kJ2

    2N2483

    Abstract: 2N2484 4501 ic
    Text: II N AHER PHILIPS/DISCRETE blE D • bb53^31 0020101 Tb7 2N2483 2N2484 I SILICON PLANAR TRANSISTORS N-P-N transistors in TO -18 m etal envelopes w ith th e c o lle c to r connected to th e case. These transistors are p rim a rily intended fo r use in high perform ance, low -level, low-noise a m p lifie r


    OCR Scan     		PDF 2N2483 2N2484 500na 2N2484 4501 ic

    mps6514 replacement

    Abstract: replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907
    Text: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483


    OCR Scan     		PDF 2N2297 2N2483 2N2904; 2N2904A 2N3020 2N3053 2N3439; 2N3440 2N4030 2N4032 mps6514 replacement replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907

    2N2483

    Abstract: 2N2484 gi06
    Text: 2N2483 2N2484 SILICON PLANAR NPN LOW -LEVEL, LOW-NOISE AM PLIFIERS The 2N 2483 and 2N 2484 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case. They are designed fo r use in high-perform ance, low -noise am plifier circuits from audio


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. 2N2483 V CBO ^CEO V EBO M Min (V) Min IV) Min 60 60 6 Pc (W) 'c (A) ^CM 'cao (A) (pA) ^C6 (V) 0.36 0.05 0.01 ^CE e (V) Max


    OCR Scan     		PDF 2N2483 2N720 2N720A 2N834 2N910 2N911

    2n2483

    Abstract: 2N2484
    Text: TYPES 2N2483, 2N2484 N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 7 1 0 3 0 0 , S E P T E M B E R 1 9 6 7 FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS • Guaranteed Low-Noise Characteristics at 100 Hz, 1 kHz, and 10 kHz • High V n CEo . . . 60 V Min


    OCR Scan     		PDF 2N2483, 2N2484 2N2484) 2n2483

    2N2483

    Abstract: 2N2484 J 2N2484 2N2484 manufacturer FT1215
    Text: - _ PHILIPS In t e r n a t i o n a : 2N2483 2N2484 H SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. These transistors are prim arily intended fo r use in high performance, low-level, low-noise am plifier


    OCR Scan     		PDF 2N2483 2N2484 711002b 0042b0b 2N2484 J 2N2484 2N2484 manufacturer FT1215

    8VC80

    Abstract: No abstract text available
    Text: D fV C f TYPF PACKAGE BVCEO 8VC8 0 BVEBO ICBO Q VCB { V I M IN V M IN IV ) M IN Im A I M AX |V ) 2N2475 2N2476 2N2477 2N2481 2N2483 NPN NPN NPN NPN NPN T O -18 TO -5 TO -5 T O -18 T O -18 6 20 20 15 60 15 60 60 40 60 4 5 5 5 6 50 200 200 50 10 2N2484 2N2501


    OCR Scan     		PDF 2N2475 2N2476 2N2477 2N2481 2N2483 2N2484 2N2501 2N2509 2N25I0 2N251I 8VC80

    f-30MHz

    Abstract: 2N2483 2N2484
    Text: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /


    OCR Scan     		PDF S00fiA 30MHz 10fiA 100mA 10/1A 140KH2 2N2483 2N2484 f-30MHz 2N2483 2N2484

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan     		PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651