80c42
Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
Text: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103
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lan386
D-79200
D-79206
908-0lFax
908-200lsales
lanTMSC300
80c42
82C42
siemens J146
80c42c
82c42 via
cga to vga converter circuits
siemens s35 lcd
smd 39a diode zener
B34AB
amd elan sc300
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MX29F040QC-70
Abstract: MX29F040 29F040-70 29F040 555H MX29F040QC-55 29F040-55
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
DEC/17/1999
MAY/29/2000
JUN/12/2001
AUG/08/2001
MX29F040QC-70
MX29F040
29F040-70
29F040
555H
MX29F040QC-55
29F040-55
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Untitled
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F040
512KX8]
70/90/120ns
64K-Byte
PM0538
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Macronix marking
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
JUL/01/1999
JUL/12/1999
OCT/04/1999
DEC/17/1999
MAY/29/2000
PM0538
Macronix marking
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1702 eprom programmer
Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Text: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current
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AS29F040
32-pin
1702 eprom programmer
TAA 761 A
HV Component Associates
512K8
1702 eprom
1702 EPROM data sheet
AS29F040-120LC
as29f040-55lc
AS29F040-70LC
eprom 1702
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29f040
Abstract: TMS29VF040 29F040-70 TMS29F040 TMS29LF040
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820C – APRIL 1996 – REVISED JUNE 1998 D Single Power Supply: 5 V ± 10% D D D D D D D A12 A15 A16 A18 VCC W A17 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 A14
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TMS29F040
SMJS820C
TMS29LF040
TMS29VF040
SMJS825)
29f040
29F040-70
TMS29F040
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Untitled
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
PM0538
DEC/17/1999
MAY/29/2000
JUN/12/2001
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tsc701
Abstract: sparclet pia7 sensor AUI isolation barrier M65656 V110
Text: TSC701 Advanced Communication Controller User’s Manual - 1996 TSC701 This design guide provides no information regarding delivery conditions and availability. Informations contained in specification charts are meant for product description but not as assured characteristics in the legal sense.
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TSC701
tsc701
sparclet
pia7 sensor
AUI isolation barrier
M65656
V110
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29F040-70
Abstract: TMS29F040 TMS29LF040 TMS29VF040 "NOR Flash" 1996 protect
Text: TMS29F040 524ā288 BY 8ĆBIT FLASH MEMORY SMJS820C − APRIL 1996 − REVISED JUNE 1998 D Single Power Supply: 5 V ± 10% D D D D D D D A12 A15 A16 A18 VCC W A17 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 3 2 1 32 31 30 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21
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TMS29F040
SMJS820C
TMS29LF040/
TMS29VF040
SMJS825)
29F040-70
TMS29F040
TMS29LF040
"NOR Flash" 1996 protect
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Untitled
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
DEC/17/1999
MAY/29/2000
JUN/12/2001
AUG/08/2001
JUL/01/2002
SEP/04/2002
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Untitled
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
100us
JUL/01/1999
JUL/12/1999
OCT/04/1999
PM0538
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Untitled
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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PDF
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
UL/12/1999
OCT/04/1999
PM0538
DEC/17/1999
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Untitled
Abstract: No abstract text available
Text: MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current 5MHz
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MX29F040
512KX8]
55/70/90/120ns
64K-Byte
JUN/12/2001
AUG/08/2001
JUL/01/2002
SEP/04/2002
NOV/21/2002
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s29f
Abstract: No abstract text available
Text: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '
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TMS29F040
4194304-BIT
29LF040/
29VF040
ComJS820A
R-PDSO-G32)
s29f
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Untitled
Abstract: No abstract text available
Text: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t
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OCR Scan
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PDF
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512KX8
AS29F040-55TC
AS29F040-70TC
AS29F040-70T1
AS29F040-90TC
AS29F040-90TI
AS29F040-120TC
A529F040-120TI
AS29F040-150TC
AS29F040-150TI
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00D05
Abstract: AS29F040 29F040 29F040-70
Text: H ig h P e r f o r m a n c e 512KX8 S V C M O S F la s h EEPRO M « II J J i A S29F040 5 1 2 K X 8 CMOS Flash EEPROM Preliminary information Features • Organization: 5 1 2 Kx 8 • Sector architecture • Low pow er consum ption - 30 m A m a x im u m rea d c u rre n t
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AS29F040
512KX8
512Kx8
32-pin
AS29F040-55TC
9F040-7
AS29F040-70TI
9F040
-90TC
00D05
AS29F040
29F040
29F040-70
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GA1030
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY . • • • • • • • • • • SMJS820B - APRIL 1996 - REVISED NOVEMBER 1997 Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/ 29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LFO40/'29VFO4O
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OCR Scan
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PDF
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SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
29LFO40/
29VFO4O
GA1030
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29F040C
Abstract: A16HR M29F040CT90 M29F040CF90 M29F040IF70
Text: Order this docum ent by M29F040/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F040 Advance Information 4M CMOS Sector Erase Flash Memory PLCC CASE 989A -01 The M29F040 is a 4M, 5 V-only, sector erase flash memory organized as 512K bytes of 8 bits each. The M29F040 is offered in JEDEC-standard 32-pin packages.
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M29F040/D
M29F040
M29F040
32-pin
1ATX31710-0
29F040/D
29F040C
A16HR
M29F040CT90
M29F040CF90
M29F040IF70
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Untitled
Abstract: No abstract text available
Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current
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OCR Scan
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PDF
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S29F040
040-90T
-120TC
-150TC
040-55L
040-70L
040-90L
040-150L
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Maxim 17113
Abstract: 29F040 29F040 equivalent
Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s
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Am29F040
32-pin
29F040
Maxim 17113
29F040 equivalent
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3251b
Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands
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Am29F040
32-pin
3251b
29F040
3251L
AM29F040-75JC
AM29F040A
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s2-1040s
Abstract: AS29F040-120LC 29F040 29F040-70 AS29F040 AS29F040-55TC 00D102
Text: A I I i ” h l'i i l o t i n , n u e •■ S I 1k x X S V C M O S I lash I IP KO M \ S 2 > 1 0 4 0 S I ?. Kx <S CMOS I'ldsli I I FROM Preliminary information Features • Low pow er consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t
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PDF
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512KX8
32-pin
AS29F040-55TC
AS29F040-70TC
AS29F040-70TI
AS29F040-90TC
AS29F040-90TI
AS29F040-1
A529F040-1
AS29F040-150TC
s2-1040s
AS29F040-120LC
29F040
29F040-70
AS29F040
AS29F040-55TC
00D102
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current
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PDF
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S12KX8
S29F040
512Kx8
32-pin
29F040-70L
AS29F040-70L
29F040-90L
S29F040-120L
AS29F040
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29VF040
Abstract: TMS29F040 29VF04 SMJS820B
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SM JS820B - AP R IL 1996 - REVISED N O VEM BER 1997 • • • • Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
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29LF040/
29VF040
SMJS825)
Ty1996-REVISED
R-PDSO-G32)
4040097/E
29VF040
TMS29F040
29VF04
SMJS820B
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