Untitled
Abstract: No abstract text available
Text: Product Specification 108-2375 29Aug12 Rev A STRADA Mesa* High Speed Mezzanine Press-Fit Differential Connector System 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the STRADA Mesa* High Speed Mezzanine Press-Fit Differential Connector System which provides for interconnection of
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29Aug12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Semiconductors Axial > 4 A for DO-204AR Part number V XXXXXXX ZYYWWX Z = Environmental digit - none = Lead Pb -free and RoHS compliant - M = Halogen-free, RoHS compliant, and terminations lead (Pb)-free YY = Two digit for the year
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DO-204AR
29-Aug-11
vishay Axial DO-204AR
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Untitled
Abstract: No abstract text available
Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high
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VS-MBR150,
VS-MBR150-M3,
VS-MBR160,
VS-MBR160-M3
2002/95/EC
DO-204AL
DO-41)
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy
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VS-MBR350,
VS-MBR350-M3,
VS-MBR360,
VS-MBR360-M3
2002/95/EC
DO-201AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-MBR1100,
VS-MBR1100-M3
2002/95/EC
DO-204AL
DO-41)
VS-MBR1100.
2011/65/EU
2002/95/EC.
2002/95/EC
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diode 1n5818
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
diode 1n5818
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Abstract: No abstract text available
Text: Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AR DIMENSIONS in millimeters inches 6.35 (0.250) DIA. 6.10 (0.240) Cathode band 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365) 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365)
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DO-204AR
29-Aug-11
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Untitled
Abstract: No abstract text available
Text: VS-MBR350 -M3 , VS-MBR360 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy
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VS-MBR350
VS-MBR360
DO-201AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Abstract: No abstract text available
Text: VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5820,
VS-1N5820-M3
2002/95/EC
DO-201AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high
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VS-MBR150,
VS-MBR150-M3,
VS-MBR160,
VS-MBR160-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: SLCC CNP www.vishay.com Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Thin Film Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < - 35 dB • SMD • Hermetic package
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MIL-PRF-83401
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-21DQ04, VS-21DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-21DQ04,
VS-21DQ04-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IR 50SQ100
Abstract: vishay Axial DO-204AR VS-50SQ100 VS-50SQ080TR ir 50sq080
Text: VS-50SQ. Series, VS-50SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode • High frequency operation Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
11-Mar-11
IR 50SQ100
vishay Axial DO-204AR
VS-50SQ100
VS-50SQ080TR
ir 50sq080
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Untitled
Abstract: No abstract text available
Text: VS-62CTQ030PbF, VS-62CTQ030-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB • High purity, high temperature
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VS-62CTQ030PbF,
VS-62CTQ030-N3
2002/95/EC
JEDEC-JESD47
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
VS-1N5819TR-M3
VS-1N5819-M3
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: VS-50SQ.G Series, VS-50SQ.G-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-50SQ.
DO-204AR
DO-204AR
2002/95/EC
11-Mar-11
vishay Axial DO-204AR
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Untitled
Abstract: No abstract text available
Text: VS-62CTQ030PbF, VS-62CTQ030-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation Anode TO-220AB • High purity, high temperature
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VS-62CTQ030PbF,
VS-62CTQ030-N3
O-220AB
2002/95/EC
JEDEC-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-40L15CTPbF, VS-40L15CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 125 °C TJ operation VR < 5 V • Very low forward voltage drop • High frequency operation Anode TO-220AB • High purity,
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VS-40L15CTPbF,
VS-40L15CT-N3
O-220AB
2002/95/EC
JEDEC-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VOM1271 www.vishay.com Vishay Semiconductors Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay FEATURES • Open circuit voltage at IF = 10 mA, 8.4 V typical 1 • Short circuit current at IF = 10 mA, 15 A typical 4 • Isolation test voltage 4500 VRMS
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VOM1271
i179066
VOM1271
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC RESERVED. C O P Y R IG H T D IS T REVISIO N S 00 D E S C R IP T IO N B2 REVISED PER DWN E C O - 1 1-01 7 4 3 6 A PVD 1 HMR SÏ 29AUG1 B±0.35[±.01] 4.2 + 0.1 I I
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29AUG1
UL94V-2
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Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL P U B L IC A T IO N R IG H T S LOC D IS T REVISIO N S 00 RESERVED. C O P Y R IG H T D E S C R IP T IO N B2 R EVISED PER DWN E C O - 1 1-01 7 436 29AUG1 1 APVD HMR SÏ B±0.35[± .01 ] 4.2 + 0.1 11 V
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29AUG1
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Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC R E V IS IO N S d is t 00 RESERVED. C O P Y R IG H T P I LTR I B3 DWN D E S C R IP T IO N REVISED PER ECO-1 1 - 0 1 7 4 3 6 29AUG1 A PVD 1 HMR SÏ POSITION 1 IDENTIFICATION
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29AUG1
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Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ i l l tights resertei 5 4 2 3 1 p r e assembled i-0918 530 7803 58U 3 0918 530 6 8 0 3 58U 2 0918 530 5803 58U 0 , 7 6 / um Au Bulk U Packaging Ml Diiensions in • Original Size DIN A A pcs EC03724 29-AUG-11 SD 0918 530 7803
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i--------0918
EC03724
29-AUG-11
25-APR-02
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