EIA-364-27 H
Abstract: EIA-364-26 condition b EIA-364-31 method iii 36428
Text: 108-78476 Product Specification 29AUG08 Rev. A 製品規格 FBIS コネクタ （Floating Battery Interconnection System Connector） 1. 適用範囲 1. Scope: 適用製品名と型番は附表 2の通りである。 provisions of FBIS Connector. 1.1 1.1 内容
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29AUG08
250MAX
120sec
50sec
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EIA-364-27 H
EIA-364-26 condition b
EIA-364-31 method iii
36428
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Untitled
Abstract: No abstract text available
Text: A10 6-…-8 – 7-.-2 hinzu 21MAY2010 KS A11 7-…-3 – 8-.-1 hinzu 13SEP2010 KS A12 8-.-2 – 8-.-7 hinzu 31AUG2012 KS A13 8-…-8 – 8-.-9 hinzu 29AUG2013 KS DocManager Die Tabellenseiten müssen einzeln gedruckt werden. Ab XP macht der Imagewriter nur noch Gruppe 4
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21MAY2010
13SEP2010
31AUG2012
29AUG2013
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Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - .095 REVISIONS DIST ES ALL RIGHTS RESERVED. 1 OO P LTR DESCRIPTION DATE DWN APVD G6 ADD NEW PART -25 19AUG2013 AY SZ G7 UPDATE -25 MATING SEQUENCE 29AUG2013 AY SZ
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19AUG2013
29AUG2013
30AUG2013
15NOV2007
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Untitled
Abstract: No abstract text available
Text: Product Specification 108-2375 29Aug12 Rev A STRADA Mesa* High Speed Mezzanine Press-Fit Differential Connector System 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the STRADA Mesa* High Speed Mezzanine Press-Fit Differential Connector System which provides for interconnection of
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29Aug12
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Abstract: No abstract text available
Text: TRF6901 SINGLEĆCHIP RF TRANSCEIVER SLWS110G − SEPTEMBER 2001 − REVISED JUNE 2004 D Single-Chip RF Transceiver for 868-MHz D D D D D D D 8-dBm Typical Output Power D Programmable Brownout Detector D Linear Receive Strength Signal Indicator and 915-MHz Industrial, Scientific, and
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TRF6901
SLWS110G
868-MHz
915-MHz
860-MHz
930-MHz
48-Pin
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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vishay Axial DO-204AR
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Semiconductors Axial > 4 A for DO-204AR Part number V XXXXXXX ZYYWWX Z = Environmental digit - none = Lead Pb -free and RoHS compliant - M = Halogen-free, RoHS compliant, and terminations lead (Pb)-free YY = Two digit for the year
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DO-204AR
29-Aug-11
vishay Axial DO-204AR
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Untitled
Abstract: No abstract text available
Text: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high
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VS-MBR150,
VS-MBR150-M3,
VS-MBR160,
VS-MBR160-M3
2002/95/EC
DO-204AL
DO-41)
2011/65/EU
2002/95/EC.
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Abstract: No abstract text available
Text: 307C1674 Vishay Cera-Mite PTC Thermistors APPLICATION - MOTOR STARTING OR CURRENT RELAYS • Solid ceramic disc metallized with rugged silver electrodes • Designed for long life OEM pressure contact mounting • UL Recognition - File E107611 STANDARD ELECTRICAL SPECIFICATIONS @ 25°C
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307C1674
E107611
08-Apr-05
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HVLED815
Abstract: HVLED815PF zener diode ST 4148 1n 4148 zener diode SO16N Package equivalent SO16N footprint diode st 4148 zvs driver HVLED815PFTR
Text: HVLED815PF Offline LED driver with primary-sensing and high power factor up to 15 W Datasheet − production data Features • High power factor capability > 0.9 ■ 800 V, avalanche rugged internal 6 Ω Power MOSFET ■ Internal high-voltage startup ■
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HVLED815PF
SO16N
HVLED815PFTR
SO16N
HVLED815PF
HVLED815
zener diode ST 4148
1n 4148 zener diode
SO16N Package equivalent
SO16N footprint
diode st 4148
zvs driver
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Abstract: No abstract text available
Text: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy
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VS-MBR350,
VS-MBR350-M3,
VS-MBR360,
VS-MBR360-M3
2002/95/EC
DO-201AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-MBR1100,
VS-MBR1100-M3
2002/95/EC
DO-204AL
DO-41)
VS-MBR1100.
2011/65/EU
2002/95/EC.
2002/95/EC
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diode 1n5818
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
diode 1n5818
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 3 R E V IS IO N S DIST LOC ALL RIGHTS RESERVED. AF 50 LTR DESCRIPTION N DATE DWN 29AUG06 REVISED PER E C R - 06-009299 APVD HMR RL D D 1 TAB 2 .522 TOTAL MAX
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29AUG06
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 6 TH S DRAWI NG IS COPYRIGHT 19 UNPUBLISHED. RELEASED BY A MP INCORPORATED. ALL FOR PUBLICATION RIGHTS 3 ,19 LOC DIST REVISIONS ¡P RESERVED. LTR DESCRIPTION RELEASE -1 REV 0520-2045-04 PER THRL -12 DATE DWN APVD 245EP02 T5 JH 29AUG05 T5 JH D D 100+25 [3.94+.98]
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29AUG05
245EP02
IN50RMATI0N
24SEP02
24-5EP-Q2
27JUN96
5872/edmmod
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Untitled
Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC RESERVED. C O P Y R IG H T D IS T REVISIO N S 00 D E S C R IP T IO N B2 REVISED PER DWN E C O - 1 1-01 7 4 3 6 A PVD 1 HMR SÏ 29AUG1 B±0.35[±.01] 4.2 + 0.1 I I
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29AUG1
UL94V-2
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Untitled
Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL P U B L IC A T IO N R IG H T S LOC D IS T REVISIO N S 00 RESERVED. C O P Y R IG H T D E S C R IP T IO N B2 R EVISED PER DWN E C O - 1 1-01 7 436 29AUG1 1 APVD HMR SÏ B±0.35[± .01 ] 4.2 + 0.1 11 V
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29AUG1
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J200M
Abstract: No abstract text available
Text: T H 1S D R A W 1NG 1S U N P U B L 1S H E D . COPYRIGHT RELEASED BY 19 AMP INCORPORATED. FOR ALL PUBLICATION RIGHTS .19 LOC D IST REV I S I ONS AP RESERVED. LTR DESCRIPTION DA T E DWN WAS 98-29092-001 CAD [ngcj REVISED BY E C R -05-008986 29AUG2005 APVD
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29AUG2005
03SEP98
JUN96
J200M
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 R E VIS IO N S LTR A DESCRIPTION EC-05-5819 DATE DWN APVD 29AUG06 MB MS 7.15 MATERIALS: CASE: NYLON 4 / 6 , U L 9 4 V - 0 , BLACK
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EC-05-5819
29AUG06
12VDC,
IA-448,
--23B,
15DEC04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC DIST G ALL RIGHTS RESERVED. R EVISIO NS 14 LTR H DESCRIPTION REVISE8REDRAW ON CAD/0L20-Û142-97 DATE DUN APVD 29AUG97 ME SB D D 1 WIRE INSULATION COPPER TIN C
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CAD/0L20-Ã
29AUG97
27JUN96
25-AUG-97
/home/ssrv027a/dsk01/deptl132/deptf
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Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY ^ C O E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - R EVIS IO N S RESERVED. AD C O R P O R A T IO N . 00 D E S C R IP T IO N S' S2 6MAR2007 REVISED 29AUG09
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ECO-09-021
16MAR2007
29AUG09
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AF R E V IS IO N S DIST 50 LTR DESCRIPTION K DATE 29AUG06 REVISED PER E C R - 06-009299 DWN APVD HMR RL D D 1 TAB n D IM E N S IO N S
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29AUG06
31MAR2000
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Untitled
Abstract: No abstract text available
Text: n 4 THIS DRAWING 0 IS 3 UNPUBLISHED. COPYRIGHT RELEASED BY 19 A MP INCORPORATED. FOR PUBLICATION ALL RIGHTS 2 ,19 LOC RESERVED. DIST revisio n AA ; DESCRIPTION LTR ADDED : -2 PER EC DWN D ATE 29AUG02 0515-0297-02 APVD DL D RPN RETAINER DIMENSIONS ARE MAXIMUM UNLESS OTHERWISE
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29AUG02
76pmDOCUMENT
554T53-2
554T53-1
09MAY94
31-AUG-02
amp36051
/honie/amp36051
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Untitled
Abstract: No abstract text available
Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC R E V IS IO N S d is t 00 RESERVED. C O P Y R IG H T P I LTR I B3 DWN D E S C R IP T IO N REVISED PER ECO-1 1 - 0 1 7 4 3 6 29AUG1 A PVD 1 HMR SÏ POSITION 1 IDENTIFICATION
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29AUG1
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