TB400
Abstract: GR-1089-CORE TB0640M TB0720M TB0900M TB1100M TB1300M TB4000M
Text: LITE-ON SEMICONDUCTOR TB0640M thru TB4000M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 80 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A
|
Original
|
TB0640M
TB4000M
10/1000us
8/20us
29-April-2003,
KSWB06
TB400
GR-1089-CORE
TB0720M
TB0900M
TB1100M
TB1300M
TB4000M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 29/04/11 RADIALL TECHNICAL DATA SHEET R 513 - - - - - - TTR NIIU UM MS Seerriieess RA AN NS SFFE ER RS SW WIITTC CH HE ES S : TTIITTA AN Issue : 29-April-2011 DPDT Coaxial Switches DC to 6 GHz, DC to 20 GHz, DC to 26.5 GHz, DC to 40 GHz Radiall’s TITANIUM switches are optimised to perform at a high level over an extended life span. With
|
Original
|
29-April-2011
|
PDF
|
Marking code CS
Abstract: MOSFET 2KV "MARKING CODE CS" n-channel mosfet transistor low power TLM621
Text: Central CTLDM7003-M621 SURFACE MOUNT TINY LEADLESS MODULETM ENHANCEMENT-MODE N-CHANNEL MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7003-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLMTM 2x1mm package.
|
Original
|
CTLDM7003-M621
TLM621
33mm2.
29-April
TLM621
Marking code CS
MOSFET 2KV
"MARKING CODE CS"
n-channel mosfet transistor low power
|
PDF
|
pl 2303
Abstract: ST72344 ST72F344 LQFP32 LQFP44 LQFP48
Text: ST72344xx ST72345xx 8-bit MCU with up to 16 Kbytes Flash memory, 10-bit ADC, two 16-bit timers, two I2C, SPI, SCI Features • ■ ■ ■ ■ Memories – up to 16 Kbytes Program memory: single voltage extended Flash XFlash with readout and write protection, in-circuit and inapplication programming (ICP and IAP).
|
Original
|
ST72344xx
ST72345xx
10-bit
16-bit
pl 2303
ST72344
ST72F344
LQFP32
LQFP44
LQFP48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPS150 Silicon Controlled Rectifier 25 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 x 150 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 117 x 84 MILS Gate Bonding Pad Area 24 x 24 MILS Top Side Metalization
|
Original
|
CPS150
CS220-25M
CSDD-25M
29-April
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
|
Original
|
CPD25
1N5185
1N5188
1N5415
1N5420
29-April
|
PDF
|
LCD 24 segments, 4 commons
Abstract: stm32l STM32l discovery STM32L-DISCOVERY STM32L152RBT6 STM32L15 ST-M32 IAR ewarm TRUESTUDIO STMicroelectronics date code DIP28
Text: STM32L-DISCOVERY STM32L ultralow power discovery board Data brief Features • STM32L152RBT6 microcontroller featuring 128 KB Flash, 16 KB RAM, 4 KB EEPROM, in an LQFP64 package ■ On-board ST-Link/V2 with selection mode switch to use the kit as a standalone
|
Original
|
STM32L-DISCOVERY
STM32L
STM32L152RBT6
LQFP64
DIP28
LQFP64d
LCD 24 segments, 4 commons
STM32l discovery
STM32L-DISCOVERY
STM32L15
ST-M32
IAR ewarm
TRUESTUDIO
STMicroelectronics date code DIP28
|
PDF
|
TB400
Abstract: TB4000H GR-1089-CORE TB0640H TB0720H TB0900H TB1100H TB1300H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
|
Original
|
TB0640H
TB4000H
10/1000us
8/20us
29-April-2003,
KSWB04
TB400
TB4000H
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
|
PDF
|
SOT-23 IP
Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction
Text: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable
|
Original
|
CMPP6027
CMPP6028
OT-23
CMPP6027,
CMPP6027
CMPP6028
29-April
SOT-23 IP
marking code P28 SOT 23
Programmable Unijunction Transistor
CMPP6027 CMPP6028
Programmable unijunction
unijunction
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPS090 Silicon Controlled Rectifier 8 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 90 x 90 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 60 x 30 MILS Gate Bonding Pad Area 22 x 22 MILS Top Side Metalization
|
Original
|
CPS090
CS220-8M
29-April
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPD07 General Purpose Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 82 x 82 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
|
Original
|
CPD07
29-April
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS TRIAC CPQ057 2 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 9.1 MILS MT1 Bonding Pad Area 29 x 17 MILS Gate Bonding Pad Area 8 x 8 MILS Top Side Metalization Al - 45,000Å Back Side Metalization
|
Original
|
CPQ057
CQ92-2M
CQ223-2M
CQ89-2M
29-April
|
PDF
|
MBF310
Abstract: plasma tv technology ic fujitsu bubble memory diagram circuit usb mp3 player with radio fm lcd optical fingerprint sensor major project for electronics and communication e FR60Lite biosensor CMOS image sensor fingerprint circuit circuit diagram of queuing with LCD display
Text: F a l l 2 0 0 3 Fujitsufocus The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. The World’s First Single-chip 10Gbps Ethernet Switch The new 10Gbps Ethernet switch chip was developed for the optical network,
|
Original
|
10Gbps
10Gbps
12-port,
32-bit
CORP-NL-20988-10/2003
MBF310
plasma tv technology ic
fujitsu bubble memory
diagram circuit usb mp3 player with radio fm lcd
optical fingerprint sensor
major project for electronics and communication e
FR60Lite
biosensor
CMOS image sensor fingerprint circuit
circuit diagram of queuing with LCD display
|
PDF
|
HX8352C
Abstract: hx8352
Text: DOC No. HX8352-C(T -DS ) HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Temporary version 01 April, 2010 HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents
|
Original
|
HX8352-C
240RGB
Bx432dots,
HX8352-C000
161April,
HX8352C
hx8352
|
PDF
|
|
|
CQ220-12B
Abstract: No abstract text available
Text: PROCESS Triac CPQ130 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 45,000Å
|
Original
|
CPQ130
CQ220-12B
CQDD-12M
29-April
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPS165 Silicon Controlled Rectifier 35 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 165 x 165 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 131 x 91 MILS Gate Bonding Pad Area 31 x 31 MILS Top Side Metalization
|
Original
|
CPS165
CS220-35M
29-April
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization
|
Original
|
CPS130
CS220-16M
CSDD-16M
29-April
|
PDF
|
triac 4 amp 600 volt
Abstract: No abstract text available
Text: PROCESS Triac CPQ110 8 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 110 x 110 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 80 x 35 MILS Gate Bonding Pad Area 37 x 37 MILS Top Side Metalization Al - 45,000Å
|
Original
|
CPQ110
CQ220-8B
29-April
triac 4 amp 600 volt
|
PDF
|
cbrhdsh1-40l
Abstract: 10A Schottky bridge
Text: CBRHDSH1-40L HIGH DENSITY 1.0 AMP DUAL IN LINE LOW VF SCHOTTKY BRIDGE RECTIFIER Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-40L is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated
|
Original
|
CBRHDSH1-40L
CBRHDSH1-40L
440mV
500mA
29-April
10A Schottky bridge
|
PDF
|
1N4157
Abstract: 1N4156 1N5179 CMXSTB200 CMXSTB300 CMXSTB400 marking D3 SOT26
Text: Central CMXSTB200 CMXSTB300 CMXSTB400 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSTB Series types are multi-chip silicon diodes mounted in a surface mount SOT-26 case and designed for applications requiring controlled forward voltage
|
Original
|
CMXSTB200
CMXSTB300
CMXSTB400
OT-26
1N4156,
1N4157,
1N5179
CMXSTB200:
CMXSTB300:
1N4157
1N4156
1N5179
CMXSTB200
CMXSTB300
CMXSTB400
marking D3 SOT26
|
PDF
|
pl001
Abstract: No abstract text available
Text: ST72344xx ST72345xx 8-bit MCU with up to 16 Kbytes Flash memory, 10-bit ADC, two 16-bit timers, two I2C, SPI, SCI Features • ■ ■ ■ ■ Memories – up to 16 Kbytes Program memory: single voltage extended Flash XFlash with readout and write protection, in-circuit and inapplication programming (ICP and IAP).
|
Original
|
ST72344xx
ST72345xx
10-bit
16-bit
pl001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STM32L-DISCOVERY 32L152CDISCOVERY Discovery kits for STM32L151/152 line Data brief • IDD current measurement • LCD – DIP28 package – 24 segments, 4 commons • Four LEDs: – LD1 red/green for USB communication – LD2 (red) for 3.3 V power on – Two user LEDs, LD3 (green) and LD4
|
Original
|
STM32L-DISCOVERY
32L152CDISCOVERY
STM32L151/152
DIP28
LQFP64
STM32L-DISCOVERY
32L152CDISCOVERY
STM32L
STM32L152RBT6
STM32L152RCT6,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWI NG IS UNPUBLISHED. RE L EAS E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . ALL C O P Y R I G H T 20 20 LOC R 1G H T S R E S E RV E D. P .80 O o o O o o O o o o O O O O O O o O o o O o o ROW D o o O O O ROW C
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. TE CONNECT 1V 1TY 20 REVISIONS LOC AA P LTR DESCRIPTION DATE ECO-10-026084 REV I SE D PER E C O - 1 1- 0 0 5140 ECO-11-019412 ECO-12-007527 D D E DWN APVD 20DEC2010 s o
|
OCR Scan
|
ECO-10-026084
ECO-11-019412
ECO-12-007527
20DEC2010
29APRI
20JUN20
22FEB2012
10AUG
0AUG2007
|
PDF
|