SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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PDF
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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Original
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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PDF
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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PDF
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Intel StrataFlash Memory j3
Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads
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28F256J3,
28F128J3,
28F640J3,
28F320J3
x8/x16)
256Mbit
32-Byte
128-bit
--64-bit
Intel StrataFlash Memory j3
28F256J3
E28F640J3A-120
BGA 28F320J3
PC28F640J3
TE28F640J3C-115
vf bga
INTEL 28F320J3
RC28F128J3C-150
PC28F128J3C120
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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Original
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DS05-50204-1E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
BGA-73P-M01)
MB84VD2218XEC/
D-63303
F9909
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PDF
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RC28f320j3d
Abstract: No abstract text available
Text: Intel Embedded Flash Memory J3 v. D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)
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128-Kbyte
256Mbit
32-Byte
56-Lead
64-Ball
x8/x16
RC28f320j3d
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PDF
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28F256J3
Abstract: RC28F256J3C-125 AP-732 Micron MLC RC28F128J3C-150 28F256K18 28F640J3 965 intel leaded Intel J3 memory PC28F640J3
Text: Intel StrataFlash Memory J3 256-Mbit (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads
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256-Mbit
x8/x16)
256Mbit
32-Byte
128-bit
--64-bit
56-Lead
64-Ball
48-Ball
28F256J3
RC28F256J3C-125
AP-732
Micron MLC
RC28F128J3C-150
28F256K18
28F640J3
965 intel leaded
Intel J3 memory
PC28F640J3
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PDF
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FBGA63
Abstract: 29LW320 28F320 7286X amd Block Lock Bit Reset 2Mx16 8x32K Am29DL322
Text: Macronix International Co., Ltd. Taipei Office: 19F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW320T/B instead of Intel 28F320B3/C3 and AMD
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MX29LW320T/B
28F320B3/C3
Am29DL322/323/324
MX29LW320
Am29DL322DT/B
/2Mx16
4Mx8/2Mx16
2Mx16
7x32KW
FBGA63
29LW320
28F320
7286X
amd Block Lock Bit Reset
2Mx16
8x32K
Am29DL322
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V
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Original
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DS05-50204-3E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
F0104
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PDF
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SA3001
Abstract: MB84VD2208XEA SA70
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance
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Original
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MB84VD2208XEA-90/MB84VD2209XEA-90
73-ball
00ing
F9909
SA3001
MB84VD2208XEA
SA70
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PDF
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28f128j3d75
Abstract: 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
Text: Numonyx Embedded Flash Memory J3 v D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)
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128-Kbyte
256Mbit
32-Byte
56-Lead
64-Ball
x8/x16
32-Mbit
28f128j3d75
28f320j3d75
28F640J3D75
JS28F128J3D-75
28F128J3D-75
JS28F320J3D-75
28F128J3d
28F640J3D
28F320J3D-75
28f256j3d
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PDF
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA-85/90/MB84VD2229XEA-85/90 MB84VD2228XEE-85/90/MB84VD2229XEE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V
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DS05-50207-3E
MB84VD2228XEA-85/90/MB84VD2229XEA-85/90
MB84VD2228XEE-85/90/MB84VD2229XEE-85/90
ns/90
71-ball
SA70
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PDF
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MARKING SA70
Abstract: SA70 SA-1500
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50206-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEG-90/MB84VD2219XEG-90 MB84VD2218XEH-90/MB84VD2219XEH-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V
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DS05-50206-1E
MB84VD2218XEG-90/MB84VD2219XEG-90
MB84VD2218XEH-90/MB84VD2219XEH-90
71-ball
MB84VD2218XEG/EH-90/MB84VD2219XEG/EH-90
71-baatives
MARKING SA70
SA70
SA-1500
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PDF
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Untitled
Abstract: No abstract text available
Text: Intel Embedded Flash Memory J3 v. D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)
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128-Kbyte
256Mbit
32-Byte
56-Lead
64-Ball
x8/x16
32-Mbit
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PDF
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SA70
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50203-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218X-10/MB84VD2219X-10 MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES
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DS05-50203-1E
MB84VD2218X-10/MB84VD2219X-10
MB84VD2218XA-10/MB84VD2219XA-10
100ns
77-ball
SA70
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PDF
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scr 220v
Abstract: pc 8178 128M-BIT DC24V PT100Cu50 RS485-USB 128-MBIT
Text: NWP-CSR 系列彩色无纸记录仪 CSR 系列彩色无纸记录仪采用 5.7 英寸 TFT 或 STN 彩 色液晶屏作为显示器，采用大容量 FLASH（最大 28Mbit） 作为存储介质，结构小巧紧凑，性价比高。数据可以保存到 USB 存储棒，也可以通过通讯方式传送到上位机，通过 PC
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128Mbit
64Mbit
RS232/RS485
Pt100Cu50
100mv
15KHz
20V/3A
scr 220v
pc 8178
128M-BIT
DC24V
PT100Cu50
RS485-USB
128-MBIT
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PDF
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA-90/MB84VD2229XEA-90 MB84VD2228XEE-90/MB84VD2229XEE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V
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Original
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DS05-50207-1E
MB84VD2228XEA-90/MB84VD2229XEA-90
MB84VD2228XEE-90/MB84VD2229XEE-90
71-ball
MB84VD2228XEA/EE-90/MB84VD2229XEA/EE-90
71-balatives
SA70
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PDF
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28F640J3
Abstract: E28F640J3A-120 Intel StrataFlash Memory j3 28F256K18 28F128J3 28F160S3 28F256J3 28F320J3 28F320J5 28F320S3
Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page-Mode Reads
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Original
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28F256J3,
28F128J3,
28F640J3,
28F320J3
x8/x16)
256Mbit
32-Byte
128-bit
--64-bit
28F640J3
E28F640J3A-120
Intel StrataFlash Memory j3
28F256K18
28F128J3
28F160S3
28F256J3
28F320J3
28F320J5
28F320S3
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PDF
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DS05-50205-1E
Abstract: MB84VD2208XEA SA70
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50205-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance
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Original
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DS05-50205-1E
MB84VD2208XEA-90/MB84VD2209XEA-90
73-ball
BGA-73P-M01)
MB84VDatives
DS05-50205-1E
MB84VD2208XEA
SA70
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PDF
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28F256J3
Abstract: 28F128J3 TE28F640J3C120 253418 297833 28F160S3 28F320J3 28F320J5 28F320S3 28F640J3
Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125ns Initial Access Speed (256Mbit density only) — 25 ns Asynchronous Page-Mode Reads
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Original
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28F256J3,
28F128J3,
28F640J3,
28F320J3
x8/x16)
125ns
256Mbit
256Mbit
32-Byte
128-bit
28F256J3
28F128J3
TE28F640J3C120
253418
297833
28F160S3
28F320J3
28F320J5
28F320S3
28F640J3
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PDF
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10100XXX
Abstract: No abstract text available
Text: ISSI IS71VPCF16XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 16 Mbit Simultaneous Operation Flash PRELIMINARY Memory and 4 Mbit Static RAM INFORMATION MAY 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance:
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IS71VPCF16XS04
69-ball
IS71VPCF16HS04-8585FI
IS71VPCF16JS04-8585FI
IS71VPCF16KS04-8585FI
IS71VPCF16LS04-8585FI
IS71VPCF16MS04-8585FI
IS71VPCF16NS04-8585FI
IS71VPCF16PS04-8585FI
IS71VPCF16QS04-8585FI
10100XXX
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance
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OCR Scan
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8/x16)
MB84VD2218XA-10/MB84VD2219XA-10
100ns
77-ball
F9903
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PDF
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2SA541
Abstract: SA70
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XEC-90/MB84VD2219X EC -90 MB84VD2218XEE-go/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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OCR Scan
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8/x16)
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
BGA-73P-M01)
MB84VD2218XEC/EE/2219XEC/EE-90
2SA541
SA70
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PDF
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Untitled
Abstract: No abstract text available
Text: E2D0026-39-23 O K I Semiconductor P rev io u s version : M ay. 1997 M SM 6688/6688L ADPCM Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6688/6688L is a "solid-state recorder" IC developed using the ADPCM method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and a dedicated register
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OCR Scan
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E2D0026-39-23
6688/6688L
6688/6688L
MSM6688
MSM6688L
6688L
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PDF
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