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    28MAR2003 Search Results

    28MAR2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 2411 equivalent

    Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
    Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T08 M48T08Y, M48T18 M48T08: M48T18/T08Y: PCDIP28 K 2411 equivalent M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y

    a20 Schottky diode st

    Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: M48Z2M1V a20 Schottky diode st M48Z2M1Y up 5135 Zeropower

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet Integrated Circuit Systems, Inc. M670 VOLTAGE CONTROLLED SAW OSCILLATOR FOUT 4 5 6 VCC The M670 is a VCSO Voltage Controlled SAW Oscillator frequency source for low-jitter clock generation. Its integrated SAW (surface acoustic wave) delay line provides


    Original     		PDF OC-48, OC-192) 28Mar2003

    Untitled

    Abstract: No abstract text available
    Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T08 M48T08Y, M48T18 M48T08: M48T18/T08Y:

    ST M48T02

    Abstract: No abstract text available
    Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 ST M48T02

    vogt transformer 406 69

    Abstract: VOGT 406 69 sck-053 transformer ee28 THERMISTOR, sck-053 545 01 122 00 vogt sck053 vogt 406 47 vogt 406 59 vogt transformer 406
    Text: Title Engineering Prototype Report for EP-33 – 45 W LCD Monitor External Power Supply using TOP247Y TOPSwitch-GX Specification 90 - 265 VAC Input, 12 V, 3.75 A, 45 W Output Applications LCD Monitor / TV and Generic External Adapter Author Power Integrations Applications Department


    Original     		PDF EP-33 OP247Y EPR-33 28-Mar-03 CISPR22 vogt transformer 406 69 VOGT 406 69 sck-053 transformer ee28 THERMISTOR, sck-053 545 01 122 00 vogt sck053 vogt 406 47 vogt 406 59 vogt transformer 406

    DS1643

    Abstract: M48T08 M48T08Y M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 M48T
    Text: M48T08 M48T08Y, M48T18 5V, 64Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power sram, real time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T08 M48T08Y, M48T18 64Kbit PCDIP28 M48T08: M48T18/T08Y: DS1643 M48T08 M48T08Y M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 M48T

    M48T08

    Abstract: M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28
    Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T08 M48T08Y, M48T18 PCDIP28 M48T08: M48T18/T08Y: M48T08 M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28

    e3 2410

    Abstract: DS1642 M48T02 M48T12 14-MAY-2001
    Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 e3 2410 DS1642 M48T02 M48T12 14-MAY-2001

    DS1642

    Abstract: M48T02 M48T12
    Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■


    Original     		PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 DS1642 M48T02 M48T12

    M48T128Y

    Abstract: STMicroelectronics
    Text: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T128Y M48T128Y STMicroelectronics

    M48T08

    Abstract: STMicroelectronics K 2411 equivalent
    Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T08 M48T08Y, M48T18 M48T08: M48T18/T08Y: 28-lead STMicroelectronics K 2411 equivalent

    up 5135

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: up 5135

    a20 Schottky diode st

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: PLDIP36 a20 Schottky diode st

    M48T02

    Abstract: STMicroelectronics
    Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T02 M48T12 M48T02: M48T12: STMicroelectronics

    Untitled

    Abstract: No abstract text available
    Text: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T128Y

    DS1642

    Abstract: M48T02 M48T12 AN-924
    Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 DS1642 M48T02 M48T12 AN-924