K 2411 equivalent
Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
PCDIP28
K 2411 equivalent
M48T18
M4T28-BR12SH
M4T32-BR12SH
SOH28
DS1643
M48T08
M48T08Y
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PDF
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a20 Schottky diode st
Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
M48Z2M1V
a20 Schottky diode st
M48Z2M1Y
up 5135
Zeropower
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Integrated Circuit Systems, Inc. M670 VOLTAGE CONTROLLED SAW OSCILLATOR FOUT 4 5 6 VCC The M670 is a VCSO Voltage Controlled SAW Oscillator frequency source for low-jitter clock generation. Its integrated SAW (surface acoustic wave) delay line provides
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Original
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OC-48,
OC-192)
28Mar2003
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
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PDF
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ST M48T02
Abstract: No abstract text available
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
ST M48T02
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PDF
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vogt transformer 406 69
Abstract: VOGT 406 69 sck-053 transformer ee28 THERMISTOR, sck-053 545 01 122 00 vogt sck053 vogt 406 47 vogt 406 59 vogt transformer 406
Text: Title Engineering Prototype Report for EP-33 – 45 W LCD Monitor External Power Supply using TOP247Y TOPSwitch-GX Specification 90 - 265 VAC Input, 12 V, 3.75 A, 45 W Output Applications LCD Monitor / TV and Generic External Adapter Author Power Integrations Applications Department
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Original
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EP-33
OP247Y
EPR-33
28-Mar-03
CISPR22
vogt transformer 406 69
VOGT 406 69
sck-053
transformer ee28
THERMISTOR, sck-053
545 01 122 00 vogt
sck053
vogt 406 47
vogt 406 59
vogt transformer 406
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PDF
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DS1643
Abstract: M48T08 M48T08Y M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 M48T
Text: M48T08 M48T08Y, M48T18 5V, 64Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power sram, real time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T08
M48T08Y,
M48T18
64Kbit
PCDIP28
M48T08:
M48T18/T08Y:
DS1643
M48T08
M48T08Y
M48T18
M4T28-BR12SH
M4T32-BR12SH
SOH28
M48T
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PDF
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M48T08
Abstract: M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T08
M48T08Y,
M48T18
PCDIP28
M48T08:
M48T18/T08Y:
M48T08
M48T08Y
M48T18
DS1643
M4T28-BR12SH
M4T32-BR12SH
SOH28
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PDF
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e3 2410
Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
e3 2410
DS1642
M48T02
M48T12
14-MAY-2001
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PDF
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DS1642
Abstract: M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■
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Original
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
DS1642
M48T02
M48T12
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PDF
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M48T128Y
Abstract: STMicroelectronics
Text: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T128Y
M48T128Y
STMicroelectronics
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PDF
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M48T08
Abstract: STMicroelectronics K 2411 equivalent
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
28-lead
STMicroelectronics
K 2411 equivalent
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PDF
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up 5135
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
up 5135
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PDF
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a20 Schottky diode st
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
PLDIP36
a20 Schottky diode st
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PDF
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M48T02
Abstract: STMicroelectronics
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T02
M48T12
M48T02:
M48T12:
STMicroelectronics
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T128Y
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PDF
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DS1642
Abstract: M48T02 M48T12 AN-924
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
DS1642
M48T02
M48T12
AN-924
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PDF
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